Results 91 to 100 of about 5,993 (241)

Highly Sensitive Heterojunction‐Gated Phototransistor With Detection Wavelength Ranged From 350 to 1700 Nm

Advanced Science, EarlyView.
This work demonstrates a heterojunction‐gated infrared phototransistor for broadband detection from 350 to 1700 nm. By suppressing defect states on nonpolar (100) facets of large PbS quantum dots via hybrid ligand passivation, the device achieves a room‐temperature detectivity of 5.7 × 1013 Jones at 1650 nm.
Hongkun Duan, Wenyu Zhang, Tao Luo, XiaoLu Xia, Qianxi Yang, Ying Yan, Shengmei Gao, Xitian Yin, Yixiao Niu, Zhiyu Zhao, Jianbing Zhang, Haobin He, Jiang Tang, Ying Wang, Zhiyong Zhang   +14 more
wiley   +1 more source

Surface Cleaning and Passivation Technologies for the Fabrication of High-Efficiency Silicon Heterojunction Solar Cells. [PDF]

Materials (Basel), 2023
Shi C, Shi J, Guan Z, Ge J.
europepmc   +1 more source

Toward Next‐Generation High‐Speed Communication and Imaging: Solution‐Processed Sb2(S,Se)3/CdS Heterojunction for Ultrafast Self‐Powered Photodetector

Advanced Science, EarlyView.
A high‐quality solution‐processed Sb2(S,Se)3/CdS heterojunction is designed to overcome the intrinsic limitations of conventional photodetectors. The fabricated device achieves an excellent self‐powered performance, including a high responsivity of 0.6 A W−1, an ultrahigh specific detectivity of 7.68 × 1012 Jones, and a wide 3db bandwidth of 175 kHz ...
Xuhua Xiao, Yichao Wang, Jingxuan Bian, Hailong Wang, Yongqiang Wang, Jinpeng Xu, Junwei Chen   +6 more
wiley   +1 more source

A Si‐MoSe2 Heterostructured Anode with Enhanced Thermal Transport and Electrochemical Performance for Liquid and All‐Solid‐State Lithium‐Ion Batteries

Advanced Science, EarlyView.
Chemically bonded Si@MoSe2@C heterointerfaces with robust Si─Se─Mo bonds enable high‐performance Si anodes. Lattice‐matched MoSe2 on porous Si with carbon‐protective coating delivers 1054 mAh g−1 after 100 cycles and 99.5% Coulombic efficiency over 400 cycles.
Yajun Zhu, Jiaqi Gu, Guangwu Zhang, Tianli Han, Yang Lu, Zhongbing Li, Hang Su, Fei Wang, Haojun Xu, Wentuan Bi, Qiye Zheng, Jinyun Liu   +11 more
wiley   +1 more source

Experimental Investigation of Si/SnOx Heterojunction for Its Tunable Optoelectronic Properties

IEEE Photonics Journal
We report growth and characterization of n-Si/p-SnOx heterojunction using RF sputtering for deposition of p-type SnOx under controlled growth oxygen pressure over n-type silicon (Si) wafer.
Manoj Kumar, Vivek Kumar Srivastava, M. Sudhakara Reddy, Ram Bharos Yadav, Manoj Sharma, Amrindra Pal, Purnendu Shekhar Pandey, Yadvendra Singh, Gyanendra Kumar Singh, Balkeshwar Singh   +9 more
doaj   +1 more source

Self-Powered, Broadband Photodetector Based on Two-Dimensional Tellurium-Silicon Heterojunction. [PDF]

ACS Omega, 2022
Hasani A, Mohammadzadeh MR, Ghanbari H, Fawzy M, Silva T, Abnavi A, Ahmadi R, Askar AM, Kabir F, Rajapakse RKND, Adachi MM.   +10 more
europepmc   +1 more source

Modulating Persistent Photoconductivity through Barrier Engineering for High‐performance and Multifunctional Two‐dimensional Optoelectronic Devices

Advanced Science, EarlyView.
Schottky barrier engineering using van der Waals contacts enables effective modulation of persistent photoconductivity (PPC) in optoelectronic devices. A high persistent photoconductivity gain (PPCG) (307.6%) is achieved in a high‐barrier Au/MoS2 junction, supporting photomemory and optoelectronic synaptic behaviors. A low PPCG (4.72%) is achieved in a
Panpan Huo, Xinhao Zhang, Xiangyong Cui, Yeming Wang, Dong Zhou, Baoyuan Man, Il Jeon, Won Jong Yoo, Cheng Yang   +8 more
wiley   +1 more source

Optical Charge Trap Memory Based on Graphene/ZnO Heterostructures for Long‐Term Retention and Adaptive Learning

Advanced Electronic Materials, EarlyView.
A biocompatible graphene/ZnO optical charge trap memory (CTM) is reported with over 54 h retention, enabled by interfacial photodoping. Using transient absorption spectroscopy and electrical analysis, charge transfer quenching is elucidated and reveal that a large energy barrier at the interface is responsible for long‐term memory retention.
Seungmin Shin, Junhyung Kim, Hyungdoh Lee, Yixuan Dou, Jacob T. Heiden, Seung Eun Lee, Jinwoo Song, Lina Quan, Giulia Tagliabue, Min Seok Jang, Himchan Cho   +10 more
wiley   +1 more source

Silicon-perovskite combinational solar cells degradation phenomena for futuristic IOTs powering

Discover Applied Sciences
Internet of Things (IoTs) nodes are presently powered through primary and secondary batteries, which face the issue of recharging and replacing within a limited life span of a battery.
Pratibha Giri, J. P. Tiwari
doaj   +1 more source

Facilely Achieved Self-Biased Black Silicon Heterojunction Photodiode with Broadband Quantum Efficiency Approaching 100. [PDF]

Adv Sci (Weinh), 2022
Zhang Y, Loh JYY, Kherani NP.
europepmc   +1 more source