Results 141 to 150 of about 21,298 (316)

Junction Physics and Architectural Paradigms in Optoelectronic Semiconductor Fibers

open access: yesAdvanced Science, EarlyView.
Optoelectronic fibers are emerging as a key platform for distributed sensing, energy harvesting, and optical communication in deformable systems. Their performance is fundamentally governed by junction formation under confined, dynamic processing conditions.
Hailiang Wang   +4 more
wiley   +1 more source

Silicon-on-sapphire nanowire for mid-IR supercontinuum generation

open access: yes, 2015
We demonstrate an octave spanning, 1.9-6.2 µm supercontinuum generation in a low loss silicon on a sapphire (SOS) nanowire.
David Moss (4859986)   +8 more
core  

III-V semiconductor nanowire lasers on silicon [PDF]

open access: yes, 2018
Chip-scale integrated light sources are a crucial component in a broad range of photonics applications. III-V semiconductor nanowire emitters have gained attention as a fascinating approach due to their superior material properties, extremely compact ...
Kim, Hyunseok
core  

Interfacial Control in Cu–MXene Hybrids Enables Selective NOx‐to‐NH3 Electroconversion: A Critical Review

open access: yesAdvanced Science, EarlyView.
Cu‐MXene interfacial catalysts provide a promising platform for electrochemical NOx upcycling to ammonia. The synergy between Cu active sites and conductive, surface‐tunable MXene supports promotes NOx adsorption, intermediate stabilization, and selective NH3 formation while suppressing competing hydrogen evolution, offering a route toward sustainable ...
Hafiz Muhammad Adeel Sharif   +5 more
wiley   +1 more source

Fabrication of Metal Nanobridge Arrays using Sacrificial Silicon Nanowire [PDF]

open access: yes, 2012
-Novel fabrication method of nanobridge array of various materials was proposed using suspended silicon nanowire array as a sacrificial template structure.
Kook-Nyung Lee   +4 more
core  

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

open access: yesAdvanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez   +12 more
wiley   +1 more source

Laser Truncation of Silicon Nanowires Fabricated by Ag-Assisted Chemical Etching for Reliable Electrode Deposition in Solar Cells

open access: yesApplied Sciences
Silicon nanowires (SiNWs) fabricated by Ag-assisted metal-assisted chemical etching (MACE) exhibit excellent light-trapping performance, yet their fragile high-aspect-ratio morphology severely limits reliable metallization in photovoltaic devices ...
Grażyna Kulesza-Matlak   +5 more
doaj   +1 more source

Topological Materials and Related Applications

open access: yesAdvanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti   +9 more
wiley   +1 more source

Silicon Nitride Resistive Memories

open access: yesAdvanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis   +7 more
wiley   +1 more source

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