Results 241 to 250 of about 53,263 (293)

Harnessing Interfacial Field Localization in Hexagonal GaP Mie Resonators

Nanophotonics, Volume 15, Issue 9, 13 May 2026.
Сharacterization of Mie modes in self‐assembled GaP nanowires grown by MBE in vertical and horizontal configurations. The hexagonal cross‐section suppresses higher‐order modes while preserving dominant low‐order modes with spectral shifts. Simulations and dark‐field spectroscopy confirm the diameter‐dependent tunability.
Aleksandra A. Kutuzova, Alexey Kuznetsov, Valeriy M. Kondratev, Vladimir V. Fedorov, Ivan S. Mukhin, Aleksandr S. Slavich, Aleksey V. Arsenin, Alexey D. Bolshakov, Mikhail V. Rybin   +8 more
wiley   +1 more source

Lithium Niobate Quadratic Integrated Nonlinear Photonics: Enabling Ultra‐Wide Bandwidth and Ultrafast Photonic Engines

Nanophotonics, Volume 15, Issue 9, 13 May 2026.
This perspective surveys emerging quantum and classical photonic applications across operating wavelengths and timescales, highlighting persistent technological gaps in integrated light sources. We examine the unique advantages of quadratic nonlinear photonics on the thin‐film lithium niobate (TFLN) platform and discuss strategies for realizing ...
Meng Tian, Guanyu Han, Ziyao Feng, Yu Liu, Yu Wang, Wenjun Deng, Ayed Al Sayem, Qiushi Guo   +7 more
wiley   +1 more source

Hybrid Liquid Metal Cathode Enables High‐Performance Intrinsically Stretchable OLEDs

Advanced Materials, Volume 38, Issue 25, 4 May 2026.
We report a hybrid liquid metal (Hyb‐LM) cathode engineered via selective rupture of liquid metal particles (LMPs), forming a bilayer architecture with a surface liquid metal (LM) layer and underlying LMP layer, which has benefits of both LM and LMPs.
Wonbeom Lee, Wei Liu, Cheng Zhang, Seungmin Shin, Jaejun Lee, Jaedong Jang, Sanggil Park, Seungbum Hong, Sihong Wang, Himchan Cho   +9 more
wiley   +1 more source

Thermally Modulated Specular Phonon Transport in a High‐Debye‐Temperature Diamond Nanobeam

Advanced Science, Volume 13, Issue 25, 4 May 2026.
Thermal transport in single‐crystal diamond nanobeams is measured from 140 to 300 K using electro‐thermal micro‐suspended structures. The thermal conductivity shows an increasing deviation from Boltzmann transport predictions assuming fully diffuse boundary scattering at lower temperatures.
Seohee Jang, Seung‐Woo Jeon, Takuma Shiga, Jeeyoung Shin, Sangwook Han, Woosung Park   +5 more
wiley   +1 more source

Protein‐Template Gold Nanoclusters Induce Differentiation and Modify the Functional Properties of Primary Astrocytes

Advanced NanoBiomed Research, Volume 6, Issue 5, May 2026.
The incubation of primary astrocytes with fAuNCs‐BSA induces: (A) long‐term effects including fAuNCs‐BSA internalization, red cell fluorescence, differentiation, upregulation of Ca2+ signaling, Cl‐current, and cell volume regulation. B) Short‐term (200 ms) stimulation with UV LED light increases in Ca2+ signaling and inhibition of K+ current. Astrocyte
Roberta Fabbri, Karima Jeneh Perry, Emanuela Saracino, Chiara Lazzarini, Anna Mariano, Diletta Spennato, Maria Grazia Mola, Maria Grazia Raucci, Alessandro Kovtun, Marianna Barbalinardo, Giorgia Conte, Denis Gentili, Marco Caprini, Vincenzo Palermo, Roberto Zamboni, Luigi Ambrosio, Wolfgang Losert, Andrea Candini, Grazia Paola Nicchia, Raj K. Gupta, Valentina Benfenati, Shashi P. Karna   +21 more
wiley   +1 more source

Some of the next articles are maybe not open access.

Related searches:

Multicolored Vertical Silicon Nanowires

Nano Letters, 2011
We demonstrate that vertical silicon nanowires take on a surprising variety of colors covering the entire visible spectrum, in marked contrast to the gray color of bulk silicon. This effect is readily observable by bright-field microscopy, or even to the naked eye.
Seo, Kwanyong, Wober, Munib, Steinvurzel, Paul, Schonbrun, Ethan, Dan, Yaping, Ellenbogen, Tal, Crozier, Kenneth B.   +6 more
openaire   +3 more sources

Reconfigurable Silicon Nanowire Transistors

Nano Letters, 2011
Over the past 30 years electronic applications have been dominated by complementary metal oxide semiconductor (CMOS) devices. These combine p- and n-type field effect transistors (FETs) to reduce static power consumption. However, CMOS transistors are limited to static electrical functions, i.e., electrical characteristics that cannot be changed.
André, Heinzig, Stefan, Slesazeck, Franz, Kreupl, Thomas, Mikolajick, Walter M, Weber   +4 more
openaire   +2 more sources

Nanowire Lithography on Silicon

Nano Letters, 2008
Nanowire lithography (NWL) uses nanowires (NWs), grown and assembled by chemical methods, as etch masks to transfer their one-dimensional morphology to an underlying substrate. Here, we show that SiO2 NWs are a simple and compatible system to implement NWL on crystalline silicon and fabricate a wide range of architectures and devices.
Alan, Colli, Andrea, Fasoli, Simone, Pisana, Yongqing, Fu, Paul, Beecher, William I, Milne, Andrea C, Ferrari   +6 more
openaire   +2 more sources

Silicon Nanowire Esaki Diodes

Nano Letters, 2012
We report on the fabrication and characterization of silicon nanowire tunnel diodes. The silicon nanowires were grown on p-type Si substrates using Au-catalyzed vapor-liquid-solid growth and in situ n-type doping. Electrical measurements reveal Esaki diode characteristics with peak current densities of 3.6 kA/cm(2), peak-to-valley current ratios of up ...
Heinz, Schmid, Cedric, Bessire, Mikael T, Björk, Andreas, Schenk, Heike, Riel   +4 more
openaire   +2 more sources

Porous Silicon Nanowires

ECS Meeting Abstracts, 2009
Abstract not Available.
Jang W. Choi, James McDonough, Yi Cui
openaire   +1 more source