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Nanodevices Based on Silicon Nanowires
Recent Patents on Nanotechnology, 2009Silicon nanowires (SiNWs) have been demonstrated as one of the promising building blocks for future nanodevices such as field effect transistors, solar cells, sensors and lithium battery; much progress has been made in this field during last decades.
Yuting, Wan +5 more
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Reversible Electrowetting on Superhydrophobic Silicon Nanowires
Nano Letters, 2007This paper reports for the first time on the reversible electrowetting of liquid droplets in air and oil environments on superhydrophobic silicon nanowires (SiNWs). The silicon nanowires were grown on Si/SiO2 substrates using the vapor-liquid-solid (VLS) mechanism, electrically insulated using 300 nm SiO2, and hydrophobized by coating with a ...
Verplanck, N. +5 more
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Chemistry and physics of silicon nanowire
Dalton Transactions, 2008This article provides a short overview of the current status of the silicon nanowire research including its synthetic chemistry and physical property characterization, with examples drawn mainly from the author's lab.
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Fabrication of silicon nanowires
Applied Physics A: Materials Science & Processing, 1998at 750 °C and 850 °C. The oxide and interface morphology are characterized by cross-sectional scanning electron microscope images. It is found that the oxidized nanowire following oxidation at 750 °C still keeps its pentagon shape even if it has been oxidized for 19 h. However, the oxidized samples at 850 °C become circular in shape.
J.L. Liu +6 more
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Synthesis of silicon nanowires
2004 IEEE International Conference on Semiconductor Electronics, 2004The synthesis of silicon nanowires is described in this paper. Using self-assembly approach, nanowires were grown by annealing of gold-coated silicon substrate to temperature about 1000 C in nitrogen ambient. Si nanowires formed upon cooling of the melted Au-Si alloy by the N/sub 2/ gas.
null Wong Yuen Yee +3 more
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Silicon nanowire photovoltaics
2008 33rd IEEE Photovolatic Specialists Conference, 2008Arrays of hundreds of parallel silicon nanowire p-n junction diodes, 20 nm in diameter and separated from each other by 14 nm, were fabricated using a variant of nanoimprint lithography. Bulk film diodes were also fabricated adjacent to the arrays as controls. Dark I–V curves from the nanowire arrays and bulk films suggest that performance is currently
D. Tham, J. R. Heath
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Oxidation of silicon nanowires
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2006Silicon nanowires have received attention for nanoscale electronic devices and chemical and biological sensors. The thermal oxide grown on the silicon nanowires could be used in a variety of devices, so the oxidation of the silicon nanowires is investigated in this work.
D. Shir +4 more
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Nanomechanics of silicon nanowires
Physical Review B, 2004The stability and elasto-mechanical properties of tetragonal and cagelike or clathrate nanowires of $\mathrm{Si}$ are investigated and compared using molecular dynamics simulations. Our results show that cagelike nanowires, while possessing lesser density, are able to maintain their structural integrity over a larger range of strain conditions than the
Madhu Menon +3 more
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Application of Silicon Nanowires
Current Nanoscience: Silicon Nanowires (SiNWs), a novel category of nanomaterials, exhibit several outstanding properties, including superior transistor performance, quantum tunneling effects, and remarkable electrical and optical capabilities. These properties are expected to contribute significantly to the development of future nanodevices, such as sensors and ...
Yang Feng +4 more
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Microelectronics International, 2014
Purpose– The purpose of this study is to present reports on fabrication of silicon (Si) nanowires (NWs). The study consists of microwire formation on silicon-on-insulator (SOI) that was fabricated using a top-down approach which involved conventional photolithography coupled with shallow anisotropic etching.Design/methodology/approach– A 5-inch p-type ...
U. Hashim, Tijjani Adam
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Purpose– The purpose of this study is to present reports on fabrication of silicon (Si) nanowires (NWs). The study consists of microwire formation on silicon-on-insulator (SOI) that was fabricated using a top-down approach which involved conventional photolithography coupled with shallow anisotropic etching.Design/methodology/approach– A 5-inch p-type ...
U. Hashim, Tijjani Adam
openaire +1 more source