Results 131 to 140 of about 974,722 (302)

Atomic scale investigation of silicon nanowires and nanoclusters

Nanoscale Research Letters, 2011
In this study, we have performed nanoscale characterization of Si-clusters and Si-nanowires with a laser-assisted tomographic atom probe. Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as ...
Gourbilleau Fabrice, Grandidier Bruno, Stiévenard Didier, Roussel Manuel, Chen Wanghua, Talbot Etienne, Lardé Rodrigue, Cadel Emmanuel, Pareige Philippe   +8 more
doaj  

Quantum Mechanical Comparison between Lithiated and Sodiated Silicon Nanowires

Applied Nano
This computational research study will compare the specific charge capacity (SCC) between lithium ions inserted into crystallized silicon (c-Si) nanowires with that of sodium ions inserted into amorphous silicon (a-Si) nanowires.
Donald C. Boone
doaj   +1 more source

Towards Wireless Detection of Surface Modification of Silicon Nanowires by an RF Approach. [PDF]

Nanomaterials (Basel), 2022
Requena F, Ahoulou S, Barbot N, Kaddour D, Nedelec JM, Baron T, Perret E.   +6 more
europepmc   +1 more source

Electropulse‐Driven Dislocation Evolution in Sub‐10 nm Metallic Nanocrystals

Advanced Science, EarlyView.
Atomic‐scale TEM imaging reveals how nanosecond electropulses drive dislocation evolution in sub‐10 nm metallic nanocrystals. Enhanced electron scattering at structural heterogeneities nucleates dislocation loops and dipoles, which then repeatedly interact and annihilate, causing dislocation density fluctuations or structural disordering.
Youran Hong, Xiaoyu Zhai, Xing Li, Xinfang Zhang, Kexing Song, Ze Zhang, Jiangwei Wang   +6 more
wiley   +1 more source

Synthesis and Photoluminescence Properties of Porous Silicon Nanowire Arrays

Nanoscale Research Letters, 2010
Herein, we prepare vertical and single crystalline porous silicon nanowires (SiNWs) via a two-step metal-assisted electroless etching method. The porosity of the nanowires is restricted by etchant concentration, etching time and doping lever of the ...
Wang Yan, Lin Linhan, Guo Siping, Sun Xianzhong, Feng Jiayou   +4 more
doaj   +1 more source

Revealing Low Amplitude Signals of Neuroendocrine Cells through Disordered Silicon Nanowires-Based Microelectrode Array. [PDF]

Adv Sci (Weinh), 2023
Maita F, Maiolo L, Lucarini I, Del Rio De Vicente JI, Sciortino A, Ledda M, Mussi V, Lisi A, Convertino A.   +8 more
europepmc   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

Radial thermal transport from heated silicon nanowires: Molecular dynamics simulations and compact engineering models

Case Studies in Thermal Engineering
Because of their advantageous properties, silicon nanowires are considered as basic structures in many concepts of future electron devices. With the high energy density induced during manufacturing but also during operation, heat dissipation is a crucial
Alexander Burenkov, Peter Pichler
doaj   +1 more source

Luminescent Silicon Nanowires as Novel Sensor for Environmental Air Quality Control. [PDF]

Sensors (Basel), 2022
Morganti D, Faro MJL, Leonardi AA, Fazio B, Conoci S, Irrera A.   +5 more
europepmc   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source