Results 1 to 10 of about 53,263 (293)
Silicon nanowire devices [PDF]
Applied Physics Letters, 2000 Transport measurements were carried out on 15–35 nm diameter silicon nanowires grown using SiH4 chemical vapor deposition via Au or Zn particle-nucleated vapor-liquid-solid growth at 440°C. Both Al and Ti/Au contacts to the wires were investigated.
Chung, Sung-Wook +2 more
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The Enzymatic Doped/Undoped Poly-Silicon Nanowire Sensor for Glucose Concentration Measurement [PDF]
Sensors, 2023 In this work, enzymatic doped/undoped poly-silicon nanowire sensors with different lengths were fabricated using a top-down technique to measure glucose concentration.
Cheng-Chih Hsu +3 more
doaj +2 more sources
Porous silicon nanowires [PDF]
Nanoscale, 2011 In this mini-review, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures-single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or ...
Yongquan, Qu +2 more
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Engineering high aspect-ratio silicon nanostructures
Physical Sciences and Technology, 2023 Large-area high density vertical silicon nanowire arrays are fabricated by metal-assisted chemical etching. Two-dimensional silica colloidal crystal template or laser interference lithography are used to create gold metal nanohole arrays on a silicon ...
Ali Belarouci +2 more
doaj +1 more source
iScience, 2021 Summary: This work experimentally studies a silicon-cored tungsten nanowire selective metamaterial absorber to enhance solar-thermal energy harvesting. After conformally coating a thin tungsten layer about 40 nm thick, the metamaterial absorber exhibits ...
Jui-Yung Chang +6 more
doaj +1 more source
Scientific Reports, 2021 Production of high-aspect-ratio silicon (Si) nanowire-based anode for lithium ion batteries is challenging particularly in terms of controlling wire property and geometry to improve the battery performance.
Andam Deatama Refino +11 more
doaj +1 more source
Remote capacitive sensing in two-dimension quantum-dot arrays [PDF]
, 2020 We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) process.
Duan, Jingyu +5 more
core +2 more sources
A Novel Top-Down Fabrication Process for Vertically-Stacked Silicon-Nanowire Array
Applied Sciences, 2020 Silicon nanowires are widely used for sensing applications due to their outstanding mechanical, electrical, and optical properties. However, one of the major challenges involves introducing silicon-nanowire arrays to a specific layout location with ...
Kangil Kim +3 more
doaj +1 more source
Biosensors, 2022 Silicon nanowire field effect transistor (NWFET) sensors have been demonstrated to have high sensitivity, are label free, and offer specific detection. This study explored the effect of nanowire dimensions on sensors’ sensitivity. We used sidewall spacer
Chi-Chang Wu
doaj +1 more source
Silicon Nanowire Band Gap Modification [PDF]
Nano Letters, 2006 Band gap modification for small-diameter (1 nm) silicon nanowires resulting from the use of different species for surface termination is investigated by density functional theory calculations. Because of quantum confinement, small-diameter wires exhibit a direct band gap that increases as the wire diameter narrows, irrespective of surface termination ...
Nolan, Michael +4 more
openaire +3 more sources