Results 21 to 30 of about 61,999 (296)
The impacts of surface conditions on the vapor-liquid-solid growth of germanium nanowires on Si (100) substrate [PDF]
, 2008 The impacts of surface conditions on the growth of Ge nanowires on a Si (100) substrate are discussed in detail. On SiO2-terminated Si substrates, high-density Ge nanowires can be easily grown. However, on H-terminated Si substrates, growing Ge nanowires
C. B. Li +6 more
core +1 more source
Direct Synthesis of α-Silicon Nitride Nanowires from Silicon Monoxide on Alumina
Nanomaterials and Nanotechnology, 2015 Silicon nitride nanowires were synthesized using silicon monoxide as raw materials and an alumina plate as substrate at 1500°C. The obtained nanowires were characterized by X-ray diffraction, Fourier transform infrared spectrosco‐ py, scanning electron ...
Jiang Cui +4 more
doaj +1 more source
Electrical transport of SiNWs array after covalent attachment of new organic functionalities
Nanomaterials and Nanotechnology, 2012 Modification of the electrical transport of a random network of silicon nanowires assembled on n‐ silicon support, after silicon nanowires functionalization by chlorination/alkylation procedure , is here described and discussed.
Marianna Ambrico +2 more
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Controllable deformation of silicon nanowires with strain up to 24% [PDF]
, 2010 Fabricated silicon nanostructures demonstrate mechanical properties unlike their macroscopic counterparts. Here we use a force mediating polymer to controllably and reversibly deform silicon nanowires.
Henry, M. David +3 more
core +1 more source
Multimode Silicon Nanowire Transistors
Nano Letters, 2014 The combined capabilities of both a nonplanar design and nonconventional carrier injection mechanisms are subject to recent scientific investigations to overcome the limitations of silicon metal oxide semiconductor field effect transistors. In this Letter, we present a multimode field effect transistors device using silicon nanowires that feature an ...
Glassner, Sebastian +5 more
openaire +3 more sources
ALD-passivated silicon nanowires for broadband absorption applications
AIP Advances, 2021 Silicon photonics enables the fabrication of optical devices with standard semiconductor processing technology. With high transparency and modal confinement, Si has matured into a well-established infrared optical material.
Felix Kimeu +3 more
doaj +1 more source
Ga+ beam lithography for suspended lateral beams and nanowires [PDF]
, 2010 The authors demonstrate the fabrication of suspended nanowires and doubly clamped beams by using a focused ion beam implanted Ga etch mask followed by an inductively coupled plasma reactive ion etching of silicon.
Henry, M. David +2 more
core +1 more source
A Novel Top-Down Fabrication Process for Vertically-Stacked Silicon-Nanowire Array
Applied Sciences, 2020 Silicon nanowires are widely used for sensing applications due to their outstanding mechanical, electrical, and optical properties. However, one of the major challenges involves introducing silicon-nanowire arrays to a specific layout location with ...
Kangil Kim +3 more
doaj +1 more source
Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si [PDF]
, 2016 Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates.
Dubrovskii, Vladimir G. +8 more
core +2 more sources
Nanomaterials, 2021 Based on a thermodynamic model, we quantify the impact of adding silicon atoms to a catalyst droplet on the nucleation and growth of ternary III–V nanowires grown via the self-catalyzed vapor–liquid–solid process. Three technologically relevant ternaries
Hadi Hijazi +2 more
doaj +1 more source