Results 51 to 60 of about 61,999 (296)
A hierarchical porous copper current collector is fabricated via three‐dimensional printing combined with pressureless sintering to stabilize lithium metal anodes. The interconnected architecture lowers local current density, guides uniform Li deposition within pores, and suppresses dendrite growth.
Alok Kumar Mishra, Mukul Shukla
wiley +1 more source
Experimental and simulation study of 1D silicon nanowire transistors using heavily doped channels [PDF]
The experimental results from 8 nm diameter silicon nanowire junctionless field effect transistors with gate lengths of 150 nm are presented that demonstrate on-currents up to 1.15 mA/m for 1.0 V and 2.52 mA/m for 1.8 V gate overdrive with an off-current
Amoroso, Salvatore M. +9 more
core +1 more source
This study investigates H4TBAPy‐based metal–organic frameworks (MOFs) ‐ NU‐1000, NU‐901, SrTBAPy, and BaTBAPy ‐ for multiphoton absorption (MPA) performance. It observes topology‐dependent variations in the 2PA cross‐section, with BaTBAPy exhibiting the highest activity.
Simon N. Deger +10 more
wiley +1 more source
Optical trapping and manipulation of nanowires using multi-hotspot dielectric nanononamers
Semiconductor nanowires have demonstrated great potential in all-photonic integrated circuit applications. However, the development of a controllable multidimensional nanowire assembly technique is still arguably in its infancy.
Rengang Li, Yaqian Zhao, Yuan Ge, Zhe Xu
doaj +1 more source
Remote capacitive sensing in two-dimension quantum-dot arrays [PDF]
We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) process.
Duan, Jingyu +5 more
core +2 more sources
Atomically engineered layered 2D Ti3CNTz carbonitride MXene exhibits ultrahigh heat and pressure sensitivity, enabling dual‐mode sensors with 300%–400% performance enhancement and durability for real‐time health‐monitoring interface devices. Precise nitrogen incorporation (e.g., Ti3C1.8N0.2Tz) boosts conductivity, enhancing temperature response, while ...
Debananda Mohapatra +12 more
wiley +1 more source
Electronic properties of silica nanowires
Thin nanowires of silicon oxide were studied by pseudopotential density functional electronic structure calculations using the generalized gradient approximation. Infinite linear and zigzag Si-O chains were investigated.
Chelikowsky J R +8 more
core +2 more sources
Engineering Heteromaterials to Control Lithium Ion Transport Pathways. [PDF]
Safe and efficient operation of lithium ion batteries requires precisely directed flow of lithium ions and electrons to control the first directional volume changes in anode and cathode materials.
Dayeh, Shadi A +3 more
core +1 more source
Atomic Layer Deposition in Transistors and Monolithic 3D Integration
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu +5 more
wiley +1 more source
Silicon carbide nanowires have been synthesized at 1400 °C by carbothermic reduction of silica with bamboo carbon under normal atmosphere pressure without metallic catalyst.
Luo Xiaogang +5 more
doaj +1 more source

