Results 181 to 190 of about 123,450 (287)

Silicon nitride PIC beam formers for light sheet fluorescent microscopy. [PDF]

Biomed Opt Express
Tabatabaei Mashayekh A, Witzens J.
europepmc   +1 more source

Reduced Variability in Threshold Switches Using Heterostructures of SiOx and Vertically Aligned MoS2

Advanced Electronic Materials, EarlyView.
Heterostructures of SiOx and vertically aligned MoS2 exhibit reliable threshold switching by guiding Ag ion migration through van der Waals gaps. Compared to SiOx‐only devices, these heterostructures demonstrate higher switching voltages, faster switching speeds, and reduced variability.
Jimin Lee, Rana Walied Ahmad, Sofía Cruces, Dennis Braun, Lukas Völkel, Ke Ran, Joachim Mayer, Stephan Menzel, Alwin Daus, Max C. Lemme   +9 more
wiley   +1 more source

Anderson's negative-<i>U</i> chemistry in amorphous silicon nitride: A complex system approach. [PDF]

Sci Adv
Choi WI, Kim B, Kwon U, Cho YH, Son WJ, Jeong H, Dronskowski R, Kim DS.   +7 more
europepmc   +1 more source

Non‐volatile Sliding Ferroelectric Memory Effect in Ultrathin γ‐InSe

Advanced Electronic Materials, EarlyView.
Room‐temperature sliding ferroelectricity in γ‐InSe enables a two‐dimensional FeFET with a 6.8 V memory window, above 104 conductance modulation, longer than 10‐years retention and above 103 cycles fatigue resistance. An ultrathin (4.8 nm) γ‐InSe ferroelectric tunnel junction exhibits reversible high/low resistance switching with TER of 105 at room ...
Yue Li, Luoyang Ding, Zhixiong Li, Feng Chen, Xiaoyao Weng, Min Zhu, Siyuan Wan, Yangbo Zhou   +7 more
wiley   +1 more source

Study on Laser Surface Texturing and Wettability Control of Silicon Nitride Ceramic. [PDF]

Micromachines (Basel)
Wang HJ, Huang JD, Wang B, Zhang Y, Wang J.   +4 more
europepmc   +1 more source

From Materials to Systems: Challenges and Solutions for Fast‐Charge/Discharge Na‐Ion Batteries

Advanced Energy Materials, EarlyView.
This review systematically analyzes the key characteristics limiting the fast‐charge/discharge capability of Na‐ion batteries (SIBs) from a multi‐scale perspective encompassing electrode materials, the electrode‐electrolyte interface, and the system. Furthermore, it presents practical solution strategies for the fundamental issues arising at each scale,
Bonyoung Ku, Sangbin Park, Sunha Hwang, Sunghyun Lim, Won‐Sub Yoon, Jongsoon Kim   +5 more
wiley   +1 more source

Structural, optical and electrical properties of Si-rich and N-rich PECVD silicon nitride films. [PDF]

Sci Rep
Moussi TA, O'Dalaigh C, Raynaud P, Esvan J, Lambkin P, Lakshmanan R, Chen B, Diaham S.   +7 more
europepmc   +1 more source

Flexible Memory: Progress, Challenges, and Opportunities

Advanced Intelligent Discovery, EarlyView.
Flexible memory technology is crucial for flexible electronics integration. This review covers its historical evolution, evaluates rigid systems, proposes a flexible memory framework based on multiple mechanisms, stresses material design's role, presents a coupling model for performance optimization, and points out future directions.
Ruizhi Yuan, Sen Chen, Minghui Guo, Ziliang Cui, Yujie Du, Jing Liu   +5 more
wiley   +1 more source

Design and Static Analysis of MEMS-Actuated Silicon Nitride Waveguide Optical Switch. [PDF]

Micromachines (Basel)
Xu Y, Lin TA, Yan P.
europepmc   +1 more source

Factorization Machine‐Based Active Learning for Functional Materials Design with Optimal Initial Data

Advanced Intelligent Discovery, EarlyView.
This work investigates the optimal initial data size for surrogate‐based active learning in functional material optimization. Using factorization machine (FM)‐based quadratic unconstrained binary optimization (QUBO) surrogates and averaged piecewise linear regression, we show that adequate initial data accelerates convergence, enhances efficiency, and ...
Seongmin Kim, In‐Saeng Suh
wiley   +1 more source