Results 91 to 100 of about 129,350 (342)

Silicon Racetrack Resonators and EIT: A Pathway to Enhanced Near Infrared Gas Sensing

open access: yesECS Sensors Plus
This work presents the design, fabrication, and experimental validation of a silicon-on-insulator (SOI) optical platform exploiting electromagnetically induced transparency (EIT) for enhanced near-infrared (NIR) refractive index sensing.
Sarah Shafaay   +3 more
doaj   +1 more source

Tunable 4-channel ultra-dense WDM demultiplexer with III-V photodiodes integrated in silicon-on-insulator [PDF]

open access: yes, 2012
A tunable 4-channel ultra-dense WDM demultiplexer with 0.25nm channel spacing is demonstrated with III-V photodiodes integrated on Silicon-on-Insulator using rib waveguides.
De Heyn, Peter   +4 more
core  

Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler [PDF]

open access: yes, 2012
We report on a heterogeneously integrated InP/silicon-on-insulator (SOI) laser source realized through divinylsiloxane-bis-benzocyclobutene (DVS-BCB) wafer bonding. The hybrid lasers present several new features. The III-V waveguide has a width of only 1.
de Valicourt, G   +10 more
core   +2 more sources

Atomic‐Scale Light Coupling Control in Ultrathin Photonic Membranes

open access: yesAdvanced Functional Materials, EarlyView.
Ultrathin photonic nanomembranes provide atomic‐scale control over the coupling between incident light and high‐Q photonic modes, enabling angstrom‐level resonance tuning and strong field confinement. When integrated with TMD monolayers, they further yield enhanced light–matter interactions, offering a versatile platform for advancing quantum photonics,
Chih‐Zong Deng   +8 more
wiley   +1 more source

Label-Free Biosensing With a Slot-Waveguide-Based Ring Resonator in Silicon on Insulator

open access: yesIEEE Photonics Journal, 2009
We present a slot-waveguide-based ring resonator in silicon on insulator (SOI) with a footprint of only 13 mum times 10 mum, fabricated with optical lithography.
Tom Claes   +5 more
doaj   +1 more source

Topology optimized mode multiplexing in silicon-on-insulator photonic wire waveguides.

open access: yesOptics Express, 2016
We design and experimentally verify a topology optimized low-loss and broadband two-mode (de-)multiplexer, which is (de-)multiplexing the fundamental and the first-order transverse-electric modes in a silicon photonic wire.
L. F. Frellsen   +3 more
semanticscholar   +1 more source

High-Q photonic crystal nanocavities on 300 mm SOI substrate fabricated with 193 nm immersion lithography [PDF]

open access: yes, 2014
On-chip 1-D photonic crystal nanocavities were designed and fabricated in a 300 mm silicon-on-insulator wafer using a CMOS-compatible process with 193 nm immersion lithography and silicon oxide planarization.
Absil, Philippe   +6 more
core   +2 more sources

Counterion Dependent Side‐Chain Relaxation Stiffens a Chemically Doped Thienothiophene Copolymer

open access: yesAdvanced Functional Materials, EarlyView.
Oxidation of a thienothiophene copolymer, p(g3TT‐T2), via different doping strategies and dopant molecules resulted in materials with similar oxidation levels and a high electrical conductivity of ≈100 S cm−1. However, mechanical properties varied significantly, with sub‐glass transition temperatures and elastic moduli spanning from –44°C to –3°C and ...
Mariavittoria Craighero   +12 more
wiley   +1 more source

Voltage oscillations in SOI transistors as generators

open access: yesТехнологія та конструювання в електронній апаратурі, 2005
Voltage and current oscillations in field-effect transistors fabricated using silicon-on-insulator (SOI) technology have been investigated. It has been shown that by changing the transistor’s supply conditions, the oscillation frequency can be varied ...
G. K. Ninidze   +3 more
doaj  

Peculiarities of electronic structure of silicon-on-insulator structures and their interaction with synchrotron radiation

open access: yesModern Electronic Materials, 2015
SOI (silicon-on-insulator) structures with strained and unstrained silicon layers were studied by ultrasoft X-ray emission spectroscopy and X-ray absorption near edge structure spectroscopy with the use of synchrotron radiation techniques.
Vladimir A. Terekhov   +5 more
doaj   +1 more source

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