Results 81 to 90 of about 129,350 (342)
Silicon-on-insulator ‘HRes’ circuit
Electronics Letters, 1994 Retinal circuits in bulk CMOS are complicated by the need to compensate for the back-gate effect. However, partially depleted silicon-on-insulator devices have a greatly reduced back-gate effect compared to bulk CMOS. Silicon retinae implemented using SOI technology would therefore be smaller and simpler than the bulk CMOS equivalent.
G.F. Marshall, S. Collins, R.J.T. Bunyan
openaire +1 more source
MOFs and COFs in Electronics: Bridging the Gap between Intrinsic Properties and Measured Performance
Advanced Functional Materials, EarlyView.Metal‐organic frameworks (MOFs) and covalent organic frameworks (COFs) hold promise for advanced electronics. However, discrepancies in reported electrical conductivities highlight the importance of measurement methodologies. This review explores intrinsic charge transport mechanisms and extrinsic factors influencing performance, and critically ...
Jonas F. Pöhls, R. Thomas Weitz
wiley +1 more source
All-Optical Wavelength Multicasting in Quadruple Resonance-Split Coupled Silicon Microring Cavity
IEEE Photonics Journal, 2018 We demonstrate an all-optical four-channel wavelength multicasting in a coupled silicon microring resonator system. The scheme is based on two-photon-absorption-induced free carrier dispersion in silicon.
Awanish Pandey, Shankar Kumar Selvaraja
doaj +1 more source
Advanced Functional Materials, EarlyView.Ferroelectricity in thin HfO2‐based films offers great possibilities for next‐generation neuromorphic memory devices. There, the response to subcoercive voltage signals is driven by the movement of mobile interfaces and their interaction with crystal defects – a yet rather unexplored aspect, which we shed light on and gain new insights into the complex
Maximilian T. Becker +11 more
wiley +1 more source
Pattern Formation on Silicon-on-Insulator [PDF]
MRS Proceedings, 2004 ABSTRACTThe strain driven self-assembly of faceted Ge nanocrystals during epitaxy on Si(001) to form quantum dots (QDs) is by now well known. We have also recently provided an understanding of the thermodynamic driving force for directed assembly of QDs on bulk Si (extendable to other QD systems) based on local chemical potential and curvature of the ...
Frank S. Flack +8 more
openaire +1 more source
High efficiency Silicon-on-Insulator grating coupler based on a poly-Silicon overlay [PDF]
, 2006 A
Baets, Roel +2 more
core +2 more sources
Advanced Functional Materials, EarlyView.An innovative medium entropy alloy (MEA) composite material was fabricated via micro laser powder bed fusion (μ‐LPBF) with appropriate nano‐ceramic particles doping and exhibited markedly improved overall performance, including synergistically enhanced strength and ductility, increased hardness and compressive strength, improved wear resistance and ...
Zhonglin Shen, Mingwang Fu
wiley +1 more source
Lasing in silicon–organic hybrid waveguides
Nature Communications, 2016 On-chip light sources for silicon photonic circuits remain a challenge since the indirect bandgap of silicon prevents efficient light emission. The authors demonstrate that lasing can be achieved by combining standard silicon-on-insulator waveguides with
Dietmar Korn +9 more
doaj +1 more source
A Novel p-LDMOS Additionally Conducting Electrons by Control ICs
IEEE Journal of the Electron Devices Society, 2019 A silicon-on-insulator (SOI) p-channel lateral double-diffused MOSFET (p-LDMOS), conducting not only holes but also electrons, is proposed and investigated by TCAD simulations. Its most important advantage is the greatly improved relationship between the
Songnan Guo, Xing Bi Chen
doaj +1 more source
Shaping Ti3C2 MXene Nanospheres for Precision Near‐Infrared Photothermal Therapy
Advanced Functional Materials, EarlyView.In this study, we report producing spherical MXenes via fs laser fragmentation of Ti3C2 flakes in liquid medium. The nanoparticles demonstrated pronounced light absorption and high photothermal conversion efficiencies of 68% and 63% under heating with NIR‐I and NIR‐II lasers, respectively.
Julia S. Babkova +21 more
wiley +1 more source