Results 81 to 90 of about 67,402,211 (299)
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon +9 more
wiley +1 more source
Highly efficient coupling between a monolithically integrated photonic crystal cavity and a bus waveguide [PDF]
We experimentally demonstrate a new optical filter design comprising of a photonic crystal cavity and a low index bus waveguide which are monolithically integrated on a silicon-on-insulator (SOI) platform.
Ferrera, Marcello +13 more
core +1 more source
This Perspective highlights atom probe tomography as a powerful tool for understanding the atomic‐scale defect chemistry in HfO2‐based ferroelectrics. 3D mapping of dopants, point defects, and interface chemistry can provide new insight into defect‐driven mechanisms underpinning the ferroelectricity in the system and guide the design of more reliable ...
Kasper Hunnestad +3 more
wiley +1 more source
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park +12 more
wiley +1 more source
Binary‐to‐Ternary Reconfigurable Transistors Using Plasma‐Assisted MoS2
A binary‐to‐ternary reconfigurable transistor is demonstrated using a dual‐gated molybdenum disulfide homojunction with localized O2 plasma treatment. The device exhibits on/intermediate and intermediate/off current ratios of 102 and 104, respectively, and the intermediate state is electrically tunable in the ternary mode.
Yeonghyeon Ko +7 more
wiley +1 more source
On the electrical and structural properties of boron delta layers in silicon [PDF]
This thesis describes the first successful growth of boron δ layers using silicon MBE. SIMS has been used to demonstrate that the layer widths are ∽2nm as has been confirmed by TEM.
Mattey, Nevil L.
core
A CMOS‐compatible, all‐dielectric Silicon‐on‐Glass reflective metasurface enables low–loss terahertz wavefront control for future 6G wireless communication. Mie‐resonant silicon pillars provide full phase coverage near 500 GHz, achieving experimentally validated single‐, dual‐, and five‐beam steering with sub‐1.5° angular error and less than 3 dB ...
Rithwik Premanand +6 more
wiley +1 more source
On-chip integratable all-optical quantizer using strong cross-phase modulation in a silicon-organic hybrid slot waveguide [PDF]
High performance all-optical quantizer based on silicon waveguide is believed to have significant applications in photonic integratable optical communication links, optical interconnection networks, and real-time signal processing systems. In this paper,
Yuan, Jinhui +33 more
core +1 more source
Semi-Insulating Silicon for Microwave Devices
The concept of fully encapsulated, semi-insulating silicon (SI-Si), Czochralski-silicon-on-insulator (CZ-SOI) substrates for silicon microwave devices is presented. Experimental results show that, using gold as a compensating impurity, a Si resistivity of order 400 kΩcm can be achieved at room temperature using lightly phosphorus doped substrates. This
Jordan, D +3 more
openaire +1 more source
A scalable, solution‐processed WSe2/ZrO2‐x van der Waals heterostructure realizes a light‐induced field‐tunneling synapse (LIFTS) that activates exclusively under bright illumination, emulating the photopic adaptation of the human retina at the device level.
Kijeong Nam +10 more
wiley +1 more source

