Results 61 to 70 of about 67,402,211 (299)
Silicon on insulator MESFETs for RF amplifiers [PDF]
Solid-State Electronics, 2010 CMOS compatible, high voltage SOI MESFETs have been fabricated using a standard 3.3V CMOS process without any changes to the process flow. A 0.6μm gate length device operates with a cut-off frequency of 7.3GHz and a maximum oscillation frequency of 21GHz.
Seth J, Wilk +4 more
openaire +2 more sources
Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film
Advanced Functional Materials, EarlyView.ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu +7 more
wiley +1 more source
Locally erasable couplers for optical device testing in silicon on insulator
, 2014 Wafer scale testing is critical to reducing production costs and increasing production yield. Here we report a method that allows testing of individual optical components within a complex optical integrated circuit.
Payne, D.N.R. +17 more
core +1 more source
Lasing in silicon–organic hybrid waveguides
Nature Communications, 2016 On-chip light sources for silicon photonic circuits remain a challenge since the indirect bandgap of silicon prevents efficient light emission. The authors demonstrate that lasing can be achieved by combining standard silicon-on-insulator waveguides with
Dietmar Korn +9 more
doaj +1 more source
A Novel p-LDMOS Additionally Conducting Electrons by Control ICs
IEEE Journal of the Electron Devices Society, 2019 A silicon-on-insulator (SOI) p-channel lateral double-diffused MOSFET (p-LDMOS), conducting not only holes but also electrons, is proposed and investigated by TCAD simulations. Its most important advantage is the greatly improved relationship between the
Songnan Guo, Xing Bi Chen
doaj +1 more source
Advanced Functional Materials, EarlyView.Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
Silicon electro-optic modulator [PDF]
, 2012 Electronic redacted version excludes material for which permission has not been granted by the rights holderIn recent years, as on-chip data transmission has increased dramatically, much time and effort has been devoted to the development of compact ...
Dong, Fengqiao
core +2 more sources
Silicon Racetrack Resonators and EIT: A Pathway to Enhanced Near Infrared Gas Sensing
ECS Sensors PlusThis work presents the design, fabrication, and experimental validation of a silicon-on-insulator (SOI) optical platform exploiting electromagnetically induced transparency (EIT) for enhanced near-infrared (NIR) refractive index sensing.
Sarah Shafaay +3 more
doaj +1 more source
Advanced Functional Materials, EarlyView.Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg +6 more
wiley +1 more source
Label-Free Biosensing With a Slot-Waveguide-Based Ring Resonator in Silicon on Insulator
IEEE Photonics Journal, 2009 We present a slot-waveguide-based ring resonator in silicon on insulator (SOI) with a footprint of only 13 mum times 10 mum, fabricated with optical lithography.
Tom Claes +5 more
doaj +1 more source