Results 61 to 70 of about 12,859 (264)
Voltage oscillations in SOI transistors as generators
Voltage and current oscillations in field-effect transistors fabricated using silicon-on-insulator (SOI) technology have been investigated. It has been shown that by changing the transistor’s supply conditions, the oscillation frequency can be varied ...
G. K. Ninidze +3 more
doaj
Cricket Inspired High Efficiency MEMS Speakers
We report on the realization of a biomimetic MEMS speaker inspired by field crickets. This speaker is at least five times thinner and four times more efficient than the current dynamic speakers used in portable electronics.
Meera Garud +4 more
doaj +1 more source
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min +13 more
wiley +1 more source
Monolithic beam splitter in silicon-on-insulator
Inductively coupled plasma reactive ion etching is used to fabricate the monolithic beam splitter in silicon-on-insulator wafer. The near-field image shows that the symmetric 1x2 T-branch works well. The rms roughness of the corner mirror surfaces is measured by atomic force microscope, and the sidewall surface roughness of rib waveguide is evaluated ...
Yongjin, Wang +4 more
openaire +2 more sources
This paper presents a digital microfluidics‐based technique for transferring and reconfiguring soft nanomembranes. Laser‐machined nanothin membranes are picked up, transported, and aligned via tailored surface tension and the actuation of water droplets, enabling the development of flexible electronics, the integration of functional materials on 3D ...
Quang Anh Nguyen +15 more
wiley +1 more source
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg +6 more
wiley +1 more source
SOI (silicon-on-insulator) structures with strained and unstrained silicon layers were studied by ultrasoft X-ray emission spectroscopy and X-ray absorption near edge structure spectroscopy with the use of synchrotron radiation techniques.
Vladimir A. Terekhov +5 more
doaj +1 more source
Unraveling the Electronic Structure of Silicon Vacancy Centers in 4H‐SiC
The electronic structure of the silicon vacancy in 4H‐SiC is probed via transient absorption spectroscopy, uncovering previously inaccessible excited states of the quartet and doublet spin channels, including the V2' transition. In combination with theoretical analysis, a comprehensive picture of the electronic structure is established.
Ali Tayefeh Younesi +9 more
wiley +1 more source
Chiral Phase Change Nanomaterials
This work demonstrates reversible, non‐volatile phase transitions in chiral Ge2${\rm Ge}_2$Sb2${\rm Sb}_2$Te5${\rm Te}_5$ (GST) nanohelices for high‐speed optical modulation of chirality and dynamic control of the state of polarization (SOP). The chiral nanostructures are fabricated using a highly directional, wafer‐scale physical vapor deposition ...
Joshua A. Burrow +11 more
wiley +1 more source
Blood Biomarkers and Surface‐Enhanced Raman Spectroscopy for Gout: A Comprehensive Review
Schematic illustrating gout disease progression from asymptomatic hyperuricemia to chronic tophaceous disease, highlighting the limitations of conventional imaging and biochemical diagnostics and the potential of engineered SERS platforms for ultrasensitive blood‐based detection of urate‐related biomarkers across disease stages, with the color gradient
Isuri Perera +6 more
wiley +1 more source

