Results 51 to 60 of about 67,402,211 (299)
Temperature dependence is one of the main challenges of the silicon-on-insulator platform due to the large thermo-optic coefficient of its core material.
Umair A. Korai +4 more
doaj +1 more source
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
Lighting up silicon nanoparticles with Mie resonances
As an indirect semiconductor, silicon shows notoriously inefficient luminescence. Here, the authors utilize the Mie resonances in silicon nanoparticles to demonstrate visible white-light emission, both from free-standing spheres and particles etched on a
Chengyun Zhang +9 more
doaj +1 more source
ABSTRACT Chitosan, a polysaccharide upcycled from biowaste, has long promised sustainable, biocompatible, and antimicrobial films and devices, an appeal reinforced by its recent regulatory recognition, with several chitosan‐based antibacterial dressings gaining clearance through the Food and Drug Administration's 510(k) pathway.
Jacopo Nicoletti +16 more
wiley +1 more source
Hyperuniform disordered waveguides and devices for near infrared silicon photonics
We introduce a hyperuniform-disordered platform for the realization of near-infrared photonic devices on a silicon-on-insulator platform, demonstrating the functionality of these structures in a flexible silicon photonics integrated circuit platform ...
Milan M. Milošević +9 more
doaj +1 more source
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner +14 more
wiley +1 more source
Drag between the electron and the hole layers formed in a silicon-on-insulator MOSFET, with the estimated interlayer distance as small as 18 nm, is investigated.
Nabil Ahmed +4 more
doaj +1 more source
P4bm framework in NaNbO3‐Ba(Ti, Hf)O3 ferrodistortive relaxor entails short‐range and highly‐polar ferrodistortive orders. The abundant highly‐polar orders facilitate to increase entropy change, and robust octahedral oxygen tilt enables to impede thermal perturbations.
Feng Li +11 more
wiley +1 more source
All-Optical Wavelength Multicasting in Quadruple Resonance-Split Coupled Silicon Microring Cavity
We demonstrate an all-optical four-channel wavelength multicasting in a coupled silicon microring resonator system. The scheme is based on two-photon-absorption-induced free carrier dispersion in silicon.
Awanish Pandey, Shankar Kumar Selvaraja
doaj +1 more source
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi +3 more
wiley +1 more source

