Results 51 to 60 of about 129,350 (342)

Influence of Sample Preparation and Processing Procedures on the Thermal Diffusivity of MgO‐C Refractories

Advanced Engineering Materials, EarlyView.
The thermal diffusivity of MgO‐C refractories is highly sensitive to sample preparation and processing procedures. In this article, the effects of coking sequence, machining conditions, structural inhomogeneity, and graphite coating application on measurements using laser flash apparatus are systematically investigated.
Luyao Pan, Rhena Wulf, Till M. J. Stadtmüller, Christos G. Aneziris, Tobias M. Fieback   +4 more
wiley   +1 more source

High-Power-Compatible Thick Silicon-on-Insulator Waveguide: An Implementation in Optical Phased Array

IEEE Photonics Journal
High-power transmission capability is a critical yet insufficiently explored frontier in integrated photonics. Owing to the restricted optical cross-sectional area of the 220 nm-thick silicon layer, conventional SOI platform is incapable of managing the ...
Jingsi Chen, Daixin Lian, Shi Zhao, Zhituo Chen, Yongqi Ye, Jingye Chen, Yaocheng Shi   +6 more
doaj   +1 more source

Effect of Gate Dielectric Material on the Electrical Properties of MoSe₂-Based Metal–Insulator–Semiconductor Field-Effect Transistor

Crystals, 2022
In this study, we fabricated metal–insulator–semiconductor field-effect transistors (MISFETs) based on nanolayered molybdenum diselenide (MoSe2) using two insulator materials, silicon dioxide (SiO2) and silicon nitride (SiN).
Abdelkader Abderrahmane, Pan-Gum Jung, Changlim Woo, Pil Ju Ko   +3 more
doaj   +1 more source

Reduction of Oxide Inclusions During the High‐Frequency Welding of Steel via a Nonthermal Ar/H2 Plasma Jet

Advanced Engineering Materials, EarlyView.
High‐frequency (HF) welding of steel is limited by oxide inclusions that degrade weld quality. This study demonstrates, for the first time, the integration of a nonthermal Ar/H2 dielectric barrier discharge (DBD) plasma jet into HF welding. Local plasma treatment provides effective shielding and in‐situ oxide reduction, resulting in markedly fewer and ...
Viktor Udachin, Lienhard Wegewitz, René Gustus, Henning Wiche, Wolfgang Maus‐Friedrichs   +4 more
wiley   +1 more source

Focused-ion-beam fabricated vertical fiber couplers on silicon-on-insulator waveguides [PDF]

, 2006
We fabricated grating couplers in silicon-on-insulator waveguides with focused-ion-beam. First devices were very lossy, but by using selective etchant and a hard mask we obtained efficiencies comparable to traditional fabrication ...
Baets, Roel, Schrauwen, Jonathan, Van Thourhout, Dries   +2 more
core   +3 more sources

Interaction of Ladle Slag With Varying SiO2 Content and Recyclate‐Based MgO–C Refractories

Advanced Engineering Materials, EarlyView.
Ladle slags (CaO/Al2O3 = 1) with 1–20 wt% SiO2 were investigated in contact with industrial MgO–C refractories fabricated from fresh magnesia and 50 wt% recyclate. The sessile drop method at 1600°C reveals intensive gas formation, delayed slag infiltration in recyclate‐based samples, and, under high‐SiO2 slag, formation of a dense MgAl2O4‐rich ...
Anton Yehorov, Eldar Salpagarov, Anhelina Mospan, Till Manon Jannis Stadtmüller, Thomas Schemmel, Christos Georgios Aneziris, Olena Volkova   +6 more
wiley   +1 more source

An Integrated Evanescent Field Sensor for the Simultaneous Measurement of Layer Refractive Index and Thickness

Sensors, 2021
A novel integrated sensor for the simultaneous measurement of layer refractive index and thickness based on evanescent fields is proposed. The theoretical limits for the accuracy of the sensor were examined for the example of a TiO2 layer.
Matthias Jäger, Jürgen Bruns, Jessica Schneidewind, Cay Pinnow, Hassan Gargouri, Klaus Petermann   +5 more
doaj   +1 more source

A gate-defined silicon quantum dot molecule

, 2008
We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer.
Fujisawa, T., Fujiwara, A., Hirayama, Y., Inokawa, H., Liu, H. W., Ono, Y.   +5 more
core   +1 more source

Deterministic Detection of Single Ion Implantation

Advanced Engineering Materials, EarlyView.
Focused ion beam implantation with high detection efficiencies will enable the rapid and scalable fabrication of advanced spin‐based technologies such as qubits. This work presents the detection efficiencies of a wide range of ions implanted into solid‐state hosts, with efficiencies of >90% recorded for ion species and substrate combinations of ...
Mason Adshead, Lok Kan Wan, Maddison Coke, Janet Jacobs, Nicholas F. L. Collins, Mark C. Rosamond, Richard J. Curry   +6 more
wiley   +1 more source

Junctionless nanosheet gate‐all‐around transistors fabricated on void embedded silicon on insulator substrate

Electronics Letters, 2023
A novel junctionless gate‐all‐around (GAA) transistor with ultrathin nanosheet GAA channel and self‐aligned raised source/drain (RSD) is successfully designed and fabricated on void embedded silicon on insulator (VESOI) substrate through a much simpler ...
Zhiqiang Mu, Hongyang Zhou, Yumeng Yang, Qiang Liu, Xing Wei, Wenjie Yu   +5 more
doaj   +1 more source