Results 31 to 40 of about 67,402,211 (299)

Compact Gas Sensor Using Silicon-on-Insulator Loop-Terminated Mach–Zehnder Interferometer

Photonics, 2021
In this paper, we propose a compact optical gas sensor based on the widespread silicon-on-insulator (SOI) technology, operating in the near-infrared (NIR) region around the 1.55 µm wavelength.
Raghi S. El Shamy, Mohamed A. Swillam, Mohamed M. ElRayany, Alaa Sultan, Xun Li   +4 more
doaj   +1 more source

Evanescently Coupled Rectangular Microresonators in Silicon-on-Insulator with High Q-Values: Experimental Characterization

Photonics, 2017
We report on evanescently coupled rectangular microresonators with dimensions up to 20 × 10 μm2 in silicon-on-insulator in an add-drop filter configuration.
Manuel Mendez-Astudillo, Hideaki Okayama, Hirochika Nakajima   +2 more
doaj   +1 more source

Suitability of applying ultrathin SOI‐based PIN diodes to photodetection of UV wavelength

Electronics Letters
This work intends to investigate the impact of silicon layer thickness and substrate biasing on the UV photodetection efficiency of PIN diodes fabricated with ultra‐thin body and buried oxide (UTBB silicon‐on‐insulator [SOI]) technology, aiming to verify
Fernando O. S. Silva, Rodrigo T. Doria
doaj   +1 more source

Enhanced Sensitivity of Silicon-On-Insulator Surface Plasmon Interferometer With Additional Silicon Layer

IEEE Photonics Journal, 2011
It is theoretically found that by adding a thin silicon layer (35 nm) on top of our previously proposed surface plasmon interference (SPI) biosensor in silicon on insulator (SOI), a sensitivity enhancement of up to 2500 nm/refractive index units (RIUs ...
Khai Q. Le, Peter Bienstman
doaj   +1 more source

High‐Resolution Corrosion Fingerprinting of Alloy Libraries via Microdroplet Spectroelectrochemistry

Advanced Engineering Materials, EarlyView.
Ionic‐liquid microdroplet spectroelectrochemistry enables stable, localized electrochemical measurements over extended timescales. By coupling impedance spectroscopy, wetting analysis, finite‐element simulations, and operando Raman spectroscopy, it disentangles geometrical and electrochemical effects, opening new opportunities for rapid corrosion ...
Ekaterina Kurchavova, Oumaïma Gharbi, Mireille Turmine, Vincent Vivier   +3 more
wiley   +1 more source

High-Power-Compatible Thick Silicon-on-Insulator Waveguide: An Implementation in Optical Phased Array

IEEE Photonics Journal
High-power transmission capability is a critical yet insufficiently explored frontier in integrated photonics. Owing to the restricted optical cross-sectional area of the 220 nm-thick silicon layer, conventional SOI platform is incapable of managing the ...
Jingsi Chen, Daixin Lian, Shi Zhao, Zhituo Chen, Yongqi Ye, Jingye Chen, Yaocheng Shi   +6 more
doaj   +1 more source

Effect of Gate Dielectric Material on the Electrical Properties of MoSe₂-Based Metal–Insulator–Semiconductor Field-Effect Transistor

Crystals, 2022
In this study, we fabricated metal–insulator–semiconductor field-effect transistors (MISFETs) based on nanolayered molybdenum diselenide (MoSe2) using two insulator materials, silicon dioxide (SiO2) and silicon nitride (SiN).
Abdelkader Abderrahmane, Pan-Gum Jung, Changlim Woo, Pil Ju Ko   +3 more
doaj   +1 more source

Multilayer Self‐Limiting Electrospray Deposition via Stepped Voltage Bias

Advanced Engineering Materials, EarlyView.
Self‐limiting electrospray deposition (SLED) uses a high voltage to generate and deposit a charged payload on a target surface. The coating retains its charge, repelling newly arriving material. SLED thickness can be decreased by applying a secondary bias to the target.
Madhuri Deb, S. Rahman Pejman, Alexander Jakimowicz, Jonathan P. Singer   +3 more
wiley   +1 more source

Ultra-Dense Nano- and Molecular-Electronic Circuits [PDF]

, 2007
This thesis describes research towards the realization of large-scale, ultra-dense nanowire-based circuits. The primary means for the construction of such circuits is the superlattice nanowire pattern transfer (SNAP) technique.
Green, Jonathan Earl
core   +1 more source

The Influence of Field‐Assisted Sintering Technology (FAST) Temperature and Cooling Rate on the Microstructural Evolution in Gamma‐Titanium Aluminide Alloy GE4822

Advanced Engineering Materials, EarlyView.
Controlling the Field Assisted Sintering Technology (FAST) parameters, dwell temperature and cooling rate, significantly influences the microstructural evolution in titanium aluminide GE4822. Significant γ‐lamellar colonies develop only upon cooling through the α‐transus.
Jack Krohn, James Pepper, Martin Jackson
wiley   +1 more source