Results 31 to 40 of about 12,859 (264)

Junctionless nanosheet gate‐all‐around transistors fabricated on void embedded silicon on insulator substrate

Electronics Letters, 2023
A novel junctionless gate‐all‐around (GAA) transistor with ultrathin nanosheet GAA channel and self‐aligned raised source/drain (RSD) is successfully designed and fabricated on void embedded silicon on insulator (VESOI) substrate through a much simpler ...
Zhiqiang Mu, Hongyang Zhou, Yumeng Yang, Qiang Liu, Xing Wei, Wenjie Yu   +5 more
doaj   +1 more source

An Integrated Evanescent Field Sensor for the Simultaneous Measurement of Layer Refractive Index and Thickness

Sensors, 2021
A novel integrated sensor for the simultaneous measurement of layer refractive index and thickness based on evanescent fields is proposed. The theoretical limits for the accuracy of the sensor were examined for the example of a TiO2 layer.
Matthias Jäger, Jürgen Bruns, Jessica Schneidewind, Cay Pinnow, Hassan Gargouri, Klaus Petermann   +5 more
doaj   +1 more source

A compact silicon-on-insulator polarization splitter [PDF]

IEEE Photonics Technology Letters, 2005
A compact directional coupler-based polarization splitter is designed and realized using silicon-on-insulator (SOI) waveguides. Even though silicon does not have any material birefringence, the high index contrast obtained in the SOI platform and reduced waveguide dimensions makes it possible to induce significant birefringence.
Kiyat I., Aydinli, A., Dagli, N.
openaire   +4 more sources

Microstructure Reconstruction in Battery Electrodes Using Machine Learning Based on Low‐Voltage Focused Ion Beam–Scanning Electron Microscopy Tomography Images

Advanced Engineering Materials, EarlyView.
Low‐voltage FIB‐SEM tomography combined with a image preprocessing pipeline improves phase contrast and enables reliable machine‐learning segmentation of conductive networks in lithium‐ion battery electrodes. Structural descriptors are extracted from segmented images, done semimanually and automated, and compared.
Lisa Beran, Vincent Nebel, Dominik Perius, Kshitij Kumar, Yannis Heim, Laura Bies, Tobias Kraus   +6 more
wiley   +1 more source

Reconfigurable Logic‐in‐Memory Operations Enabled by Triple‐Gated Feedback Field‐Effect Transistors for Area‐Efficient Computing

Advanced Engineering Materials, EarlyView.
A reconfigurable logic‐in‐memory cell composed of triple‐gated feedback field‐effect transistors implements multiple combinational logic functions within a single configuration. By utilizing program gates as dynamic input terminals, the proposed cell performs full adder, full subtractor, 2‐to‐1 multiplexer, and 4‐to‐2 encoder operations without ...
Minhyeok Seol, Yunwoo Shin, Donghyung Lee, Dongki Kim, Kyoungah Cho, Sangsig Kim   +5 more
wiley   +1 more source

Modeling and Analysis of SOI Gratings-Based Opto-Fluidic Biosensor for Lab-on-a-Chip Applications

Photonics, 2019
The design, modeling, and analysis of a silicon-on-insulator (SOI) grating coupler integrated with a microfluidic channel for lab-on-a-chip applications are presented. The grating coupler was designed to operate at 1310 nm.
Venkatesha Muniswamy, Prasant Kumar Pattnaik, Narayan Krishnaswamy   +2 more
doaj   +1 more source

Strained Silicon-On-Insulator - Fabrication and Characterization [PDF]

ECS Meeting Abstracts, 2007
Abstract not Available.
Reiche, M., Himcinschi, C., Gösele, U., Christiansen, S., Mantl, S., Buca, D., Zhao, Q. T., Feste, S., Loo, R., Nguyen, Ngoc Duy, Buchholtz, W., Wei, A., Horstmann, M., Feijoo, D., Storck, P.   +14 more
openaire   +3 more sources

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Lighting up silicon nanoparticles with Mie resonances

Nature Communications, 2018
As an indirect semiconductor, silicon shows notoriously inefficient luminescence. Here, the authors utilize the Mie resonances in silicon nanoparticles to demonstrate visible white-light emission, both from free-standing spheres and particles etched on a
Chengyun Zhang, Yi Xu, Jin Liu, Juntao Li, Jin Xiang, Hui Li, Jinxiang Li, Qiaofeng Dai, Sheng Lan, Andrey E. Miroshnichenko   +9 more
doaj   +1 more source

Dimension Effect on Breakdown Voltage of Partial SOI LDMOS

IEEE Journal of the Electron Devices Society, 2017
Dimension effect on breakdown voltage (BV) of lateral double-diffused metal-oxide–semiconductor field-effect transistor in partial silicon-on-insulator (PSOI) technology is comprehensively studied.
Yue Hu, Huazhen Liu, Qianqian Xu, Luwen Wang, Jing Wang, Shichang Chen, Peng Zhao, Ying Wang, Gaofeng Wang   +8 more
doaj   +1 more source