Results 21 to 30 of about 67,402,211 (299)

Analysis of Leakage Loss in Silicon Photonics with Finite Gain Compensation

IEEE Photonics Journal, 2017
Silicon waveguides fabricated on silicon-on-insulator wafers are leaky in nature. This fact puts a lower bound on the insulator thickness in silicon photonic structures as integrated with compact electronic devices.
Po-Jui Chiang, Tien-Tsorng Shih
doaj   +1 more source

Tapered photonic crystal microcavities embedded in photonic wire waveguides with large resonance quality-factor and high transmission [PDF]

, 2008
We present the design, fabrication, and characterization of a microcavity that exhibits simultaneously high transmission and large resonance quality-factor (Q-factor). This microcavity is formed by a single-row photonic crystal (PhC) embedded in a 500-nm-
Gnan, M., Gnan, Marco, De La Rue, R.M., Chong, Harold M H, Zain, Ahmad Rifqi Md, De La Rue, Richard M., Sorel, M., Zain, A.R.M., Sorel, Marc, Chong, H.M.H.   +9 more
core   +1 more source

Design and Simulation Elements of Analytical Microsystem-on-Chip With the Structures "Silicon-on-Insulator"

Фізика і хімія твердого тіла, 2017
In this paper the results of architecture development, layout designof analytical microsystem-on-chip with the structures "silicon-on-insulator" (SOI) and its elements schemotechnical computer simulation for determine their electrical and time ...
V. V. Dovgiy, I. T. Kohut, V. I. Golota
doaj   +1 more source

Ultra-compact silicon nanophotonic modulator with broadband response

Nanophotonics, 2012
Electro-optic modulators have been identified as the key drivers for optical communication and signal processing. With an ongoing miniaturization of photonic circuitries, an outstanding aim is to demonstrate an on-chip, ultra-compact, electro-optic ...
Sorger Volker J., Lanzillotti-Kimura Norberto D., Ma Ren-Min, Zhang Xiang   +3 more
doaj   +1 more source

Investigation on a novel SiC Schottky barrier diode hydrogen sensor with trench-insulator structure

Materials Research Express, 2021
A novel SiC Schottky barrier diode (SBD) hydrogen gas sensor with trench-insulator structure was proposed in this paper. A physical model is built for this hydrogen sensor based on 4H-SiC SBD thermionic emission theory, tunneling effect of carriers ...
Yonglan Qi, Kaiyuan Lai, Haojie Lv, Bao Qi, Yuheng Zhao   +4 more
doaj   +1 more source

Nanoribbon Biosensor-Based Detection of microRNA Markers of Prostate Cancer

Sensors, 2023
Prostate cancer (PC) is one of the major causes of death among elderly men. PC is often diagnosed later in progression due to asymptomatic early stages. Early detection of PC is thus crucial for effective PC treatment.
Yuri D. Ivanov, Kristina A. Malsagova, Kristina V. Goldaeva, Svetlana I. Kapustina, Tatyana O. Pleshakova, Vladimir P. Popov, Andrey F. Kozlov, Rafael A. Galiullin, Ivan D. Shumov, Dmitry V. Enikeev, Natalia V. Potoldykova, Vadim S. Ziborov, Oleg F. Petrov, Alexander Y. Dolgoborodov, Alexander V. Glukhov, Sergey V. Novikov, Victoria K. Grabezhova, Evgeniy S. Yushkov, Vladimir A. Konev, Oleg B. Kovalev, Alexander I. Archakov   +20 more
doaj   +1 more source

Integrated corner mirrors physically micromachined in silica-on-silica

, 2011
In integrated photonics, compact redirection of light can be achieved by corner (turning) mirrors, providing a route to higher density optical components.
Smith, P.G.R., Carpenter, Lewis, James C. Gates, Christopher Holmes, Rogers, Helen, Peter G.R. Smith, Holmes, C., Gates, J.C., Lewis G. Carpenter, Helen L. Rogers   +9 more
core   +2 more sources

Silicon-on-insulator nanophotonics [PDF]

SPIE Proceedings, 2005
Nanophotonics promise a dramatic scale reduction compared to contemporary photonic components. This allows the integration of many functions onto a chip. Silicon-on-insulator (SOI) is an ideal material for nanophotonics. It consists of a thin layer of silicon on top of an oxide buffer.
Wim Bogaerts, Pieter Dumon, Patrick Jaenen, Johan Wouters, Stephan Beckx, Vincent Wiaux, Dries Van Thourhout, Dirk Taillaert, Bert Luyssaert, Roel Baets   +9 more
openaire   +1 more source

A Three-Terminal Si-Ge Avalanche Photodiode with a Breakdown Voltage of 6.8 V and a Gain Bandwidth Product of 1377 GHz

Micromachines
Silicon–germanium (Si-Ge) avalanche photodiodes (APDs), fully compatible with complementary metal–oxide–semiconductor (CMOS) processes, are critical devices for high-speed optical communication.
Chao Cheng, Jintao Xue, Xishan Yu, Jifang Mu, Binhao Wang   +4 more
doaj   +1 more source

Electrothermally-Actuated Micromirrors with Bimorph Actuators—Bending-Type and Torsion-Type

Sensors, 2015
Three different electrothermally-actuated MEMS micromirrors with Cr/Au-Si bimorph actuators are proposed. The devices are fabricated with the SOIMUMPs process developed by MEMSCAP, Inc. (Durham, NC, USA).
Cheng-Hua Tsai, Chun-Wei Tsai, Hsu-Tang Chang, Shih-Hsiang Liu, Jui-Che Tsai   +4 more
doaj   +1 more source