Results 41 to 50 of about 129,350 (342)

A Three-Terminal Si-Ge Avalanche Photodiode with a Breakdown Voltage of 6.8 V and a Gain Bandwidth Product of 1377 GHz

Micromachines
Silicon–germanium (Si-Ge) avalanche photodiodes (APDs), fully compatible with complementary metal–oxide–semiconductor (CMOS) processes, are critical devices for high-speed optical communication.
Chao Cheng, Jintao Xue, Xishan Yu, Jifang Mu, Binhao Wang   +4 more
doaj   +1 more source

A tunable, dual mode field-effect or single electron transistor

, 2012
A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology.
B. Previtali, B. Roche, B. Voisin, Fenouillet-Beranger C., M. Sanquer, M. Vinet, R. Wacquez, V. Deshpande, Weber O., X. Jehl   +9 more
core   +1 more source

Electrothermally-Actuated Micromirrors with Bimorph Actuators—Bending-Type and Torsion-Type

Sensors, 2015
Three different electrothermally-actuated MEMS micromirrors with Cr/Au-Si bimorph actuators are proposed. The devices are fabricated with the SOIMUMPs process developed by MEMSCAP, Inc. (Durham, NC, USA).
Cheng-Hua Tsai, Chun-Wei Tsai, Hsu-Tang Chang, Shih-Hsiang Liu, Jui-Che Tsai   +4 more
doaj   +1 more source

Compact Gas Sensor Using Silicon-on-Insulator Loop-Terminated Mach–Zehnder Interferometer

Photonics, 2021
In this paper, we propose a compact optical gas sensor based on the widespread silicon-on-insulator (SOI) technology, operating in the near-infrared (NIR) region around the 1.55 µm wavelength.
Raghi S. El Shamy, Mohamed A. Swillam, Mohamed M. ElRayany, Alaa Sultan, Xun Li   +4 more
doaj   +1 more source

Efficient, broadband and compact metal grating couplers for silicon-on-insulator waveguides [PDF]

, 2007
Metal grating couplers for Silicon-on-Insulator waveguides are proposed. A silver grating coupler with 33% coupling efficiency is designed. A gold gating coupler prototype is fabricated using Focused Ion Beams demonstrating over 10% coupling efficiency. (
Baets, Roel, Scheerlinck, Stijn, Schrauwen, Jonathan, Taillaert, Dirk, Van Laere, Frederik, Van Thourhout, Dries   +5 more
core   +4 more sources

Evanescently Coupled Rectangular Microresonators in Silicon-on-Insulator with High Q-Values: Experimental Characterization

Photonics, 2017
We report on evanescently coupled rectangular microresonators with dimensions up to 20 × 10 μm2 in silicon-on-insulator in an add-drop filter configuration.
Manuel Mendez-Astudillo, Hideaki Okayama, Hirochika Nakajima   +2 more
doaj   +1 more source

Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

IEEE Photonics Journal, 2017
In this paper, we demonstrate silicon-on-insulator (SOI) channel waveguides with propagation loss and $r$ = 10  $\mu$$\text{m}$ bends with bending loss as low as 2 dB/cm and 0.02 dB/90 $^{\circ }$ in the broad wavelength range of 3.68–3.88 $\mu$ $\text ...
B. Dong, Xin Guo, C. Ho, Bo Li, Hong Wang, Chengkuo Lee, Xianshu Luo, G. Lo   +7 more
semanticscholar   +1 more source

Suitability of applying ultrathin SOI‐based PIN diodes to photodetection of UV wavelength

Electronics Letters
This work intends to investigate the impact of silicon layer thickness and substrate biasing on the UV photodetection efficiency of PIN diodes fabricated with ultra‐thin body and buried oxide (UTBB silicon‐on‐insulator [SOI]) technology, aiming to verify
Fernando O. S. Silva, Rodrigo T. Doria
doaj   +1 more source

Enhanced Sensitivity of Silicon-On-Insulator Surface Plasmon Interferometer With Additional Silicon Layer

IEEE Photonics Journal, 2011
It is theoretically found that by adding a thin silicon layer (35 nm) on top of our previously proposed surface plasmon interference (SPI) biosensor in silicon on insulator (SOI), a sensitivity enhancement of up to 2500 nm/refractive index units (RIUs ...
Khai Q. Le, Peter Bienstman
doaj   +1 more source

Photonic crystal and photonic wire nano-photonics based on silicon-on-insulator [PDF]

, 2006
Silicon-on-insulator (SOI) is a strong candidate for application in future planar waveguide integration technology, whether or not luminescence is extracted from the silicon.
Armenise, M., Camargo, E., Chong, H., Ciminelli, C., De la Rue, R., Gnan, M., Jin, C.J., Johnson, N., Ntakis, I., Pottier, P., Sorel, M., Zain, A.M., Zhang, H.   +12 more
core   +2 more sources