Results 181 to 190 of about 2,146,457 (416)

Integration of Perovskite/Low‐Dimensional Material Heterostructures for Optoelectronics and Artificial Visual Systems

Advanced Functional Materials, EarlyView.
Heterojunctions combining halide perovskites with low‐dimensional materials enhance optoelectronic devices by enabling precise charge control and improving efficiency, stability, and speed. These synergies advance flexible electronics, wearable sensors, and neuromorphic computing, mimicking biological vision for real‐time image analysis and intelligent
Yu‐Jin Du, Junjie Yang, Ziyu Lv, Yongbiao Zhai, Zezhuang Yi, Yuhui Xie, Ming‐Lin Zheng, Xiangyu Ma, Guodong Gong, Yan Wang, Ye Zhou, Su‐Ting Han   +11 more
wiley   +1 more source

Silicon Nitride-on-Insulator Photonics Polarisation Convertor

Приборы и методы измерений
Photonic integrated circuits constitute a vital component of contemporary telecommunications systems, facilitating traffic management and reducing energy consumption.
D. M. Mokhovikov, E. S. Barbin, T. G. Nesterenko, A. A. Talovskaya, A. S. Myrzakhmetov, I. V. Kulinich, P. F. Baranov, D. P. Il’yaschenko   +7 more
doaj   +1 more source

Silicon-on-Insulator Optical Waveguide Pressure Sensor Based on Mach-Zehnder Interferometer. [PDF]

Micromachines (Basel), 2022
Li C, Zhang C, Yang L, Guo F.
europepmc   +1 more source

Thickness-dependent phase transition in graphite under high magnetic field

, 2018
Various electronic phases emerge when applying high magnetic fields in graphite. However, the origin of a semimetal-insulator transition at $B \simeq 30\; \textrm{T}$ is still not clear, while an exotic density-wave state is theoretically proposed.
Osada, Toshihito, Taen, Toshihiro, Uchida, Kazuhito   +2 more
core   +1 more source

Low‐Loss Far‐Infrared Surface Phonon Polaritons in Suspended SrTiO3 Nanomembranes

Advanced Functional Materials, EarlyView.
The low‐loss, highly confined, and thickness‐tunable surface phonon polaritons are demonstrated in the far‐infrared regime within transferable freestanding SrTiO3 membranes, achieving high figures of merit comparable to the previous record values from the vdW materials.
Konnor Koons, Hans A. Bechtel, Javier Taboada‐Gutiérrez, Reza Ghanbari, Yueyin Wang, Stephanie N. Gilbert Corder, Alexey B. Kuzmenko, Ruijuan Xu, Yin Liu   +8 more
wiley   +1 more source

Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel

Micromachines
The continuous scaling down of MOSFETs is one of the present trends in semiconductor devices to increase device performance. Nevertheless, with scaling down beyond 22 nm technology, the performance of even the newer nanodevices with multi-gate ...
Potaraju Yugender, Rudra Sankar Dhar, Swagat Nanda, Kuleen Kumar, Pandurengan Sakthivel, Arun Thirumurugan   +5 more
doaj   +1 more source

Ultra-broadband on-chip beam focusing enabled by GRIN metalens on silicon-on-insulator platform. [PDF]

Nanophotonics, 2022
Shen J, Zhang Y, Dong Y, Xu Z, Xu J, Quan X, Zou X, Su Y.   +7 more
europepmc   +1 more source

Effects of Temperature Annealing on the Intrinsic Transport Mechanisms of Solution Processed Graphene Nanosheet Networks

Advanced Functional Materials, EarlyView.
Unravelling charge transport mechanisms in graphene nanosheet networks: by combining temperature‐dependent conductivity measurements with a Random Resistor Network model, this study identifies a transition from hopping‐dominated conduction to a band‐like transport mechanism.
Alessandro Grillo, Alejandro Toral‐Lopez, Damiano Marian, Aniello Pelella, Zixing Peng, Jingjing Wang, Enver Faella, Maurizio Passacantando, Antonio Di Bartolomeo, Gianluca Fiori   +9 more
wiley   +1 more source

Two Dimensional Analytical Modeling for SOI and SON MOSFET and Their Performance Comparison [PDF]

Журнал нано- та електронної фізики, 2011
During last few decade continuous device performance improvements have been achieved through a combination of device scaling, new device structures and material property improvement to its fundamental limits.
Saptarsi Ghosh, Khomdram Jolson Singh, Sanjay Deb, Subir Kumar Sarkar   +3 more
doaj  

On-chip mid-infrared silicon-on-insulator waveguide methane sensor using two measurement schemes at 3.291 μm. [PDF]

Front Chem, 2022
Zhao H, Zheng C, Pi M, Liang L, Song F, Zhang Y, Wang Y, Tittel FK.   +7 more
europepmc   +1 more source