Results 161 to 170 of about 67,402,211 (299)

Soft Skins With Reversible Thickness Morphing: Materials, Mechanisms, and Applications

Advanced Materials, EarlyView.
Evolution of electronic skin (e‐skin) technologies toward adaptive, multifunctional soft skins. Phase I highlights early rigid and discrete sensory interfaces. Phase II shows the transition toward flexible, stretchable, and large‐area e‐skin. Phase III captures the emergence of computational e‐skin.
Oliver Ozioko, Chiamaka Akah, Ravinder Dahiya   +2 more
wiley   +1 more source

Wafer-scale CMOS foundry silicon-on-insulator devices for integrated temporal pulse compression. [PDF]

Nanophotonics
Choi JW, Ong KYK, Kato M, Chee GYN, Eggleton BJ, Nagarajan R, Tan DTH.   +6 more
europepmc   +1 more source

Barrier‐Assisted Plasma Doping for Spatially Selective Resistance Engineering in MoS2 Transistors

Advanced Materials, EarlyView.
Barrier‐assisted NH3 plasma doping enables damage‐free, spatially selective carrier modulation in monolayer MoS2 transistors. An ultrathin pV3D3/Al2O3 protective‐dielectric stack acts as a chemical filter that allows NHx radicals to reach the MoS2 surface while blocking plasma damage. This process achieves a high electron concentration of 4.3 × 1013 cm−
Inseong Lee, Joonho Park, Seungsun Yoo, Seunghyun Yu, Mingu Kang, Seohak Park, Min Kyu Lee, Hyeongjin Lim, Dongyoung Kim, Kunwoo Roh, Sejin Kim, Kihyuk Kim, Wonbae Ahn, Kibum Kang, Yong‐Hoon Kim, Sung‐Yool Choi   +15 more
wiley   +1 more source

Compact 3-dB tapered multimode interference coupler in silicon-on-insulator

, 2001
We have fabricated a compact 3-dB multimode interference coupler with a large silicon-on-insulator cross section. To reduce the length of the usual symmetric interference multimode interference coupler, we propose using a parabolically tapered structure.
Wei HZ, Wei HZ,Acad Sinica,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China., Zhang XF, Liu ZL, Yu JZ   +4 more
core  

Integration of Er³⁺ Emitters in Silicon-on-Insulator Nanodisk Metasurface. [PDF]

Nanomaterials (Basel)
Bader J, Arianfard H, Ciavolino V, Ahamad MA, Inam FA, Sato SI, Castelletto S.   +6 more
europepmc   +1 more source

A Universal van der Waals Tunneling Injector for Monolayer CMOS

Advanced Materials, EarlyView.
A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho, Jing Huang, Seonguk Yang, Subin Im, Sangwoo Park, Jeongin Yeo, Sungyeon Kim, Gilhwan Do, Wenxuan Zhu, Soobeom Shin, Jongwon Lee, Yongjoon Shin, Do‐Sun Lee, Hu Young Jeong, Tae‐Eon Park, Jun Kang, Kyungmin Ko, Joonki Suh   +17 more
wiley   +1 more source

Silicon-on-insulator thermo-optic variable attenuator module with fast response

, 2005
A thermo-optic variable optical attenuator module composed of a silicon-on-insulator attenuator chip and driving circuit was designed and fabricated. The module exhibited a maximum attenuation of 21.8 dB and a response time of 10 mu s.
Li YT, Li, YT, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China., Chen YY, Chen SW, Yu JZ   +4 more
core  

Volatile and non-volatile nano-electromechanical switches fabricated in a CMOS-compatible silicon-on-insulator foundry process. [PDF]

Microsyst Nanoeng
Li Y, Bleiker SJ, Worsey E, Dagon M, Edinger P, Takabayashi AY, Quack N, Verheyen P, Bogaerts W, Gylfason KB, Pamunuwa D, Niklaus F.   +11 more
europepmc   +1 more source

Review of Inorganic Separator Engineering for Next‐Generation Lithium–Sulfur Batteries: Compromise or Cornerstone?

Advanced Materials, EarlyView.
Inorganic compound‐modified separators transform lithium–sulfur batteries from passive polysulfide confinement to active reaction‐pathway regulation. A Practical Relevance Index (PRI)‐guided framework bridges interfacial chemistry of inorganic separators with practical constraints, establishing unified design principles for scalable, high‐energy ...
Yuting Qin, Tianyi Wang, Xingyu Wang, Kaifu Xu, Yuzhou Wang, Chengyin Wang, Bing Sun, Guoxiu Wang   +7 more
wiley   +1 more source

Silicon-on-Insulator (SOI) Lateral Power-Reduced Surface Field FinFET with High-Power Figure of Merit of 239.3 MW/cm². [PDF]

Micromachines (Basel)
Song CW, Lee T, Kim D, Kyoung S, Woo S.
europepmc   +1 more source