Results 141 to 150 of about 67,402,211 (299)

Silicon-on-insulator-based waveguide switch with fast response

open access: yes, 2005
Based on thermo-optical effect of silicon, a 2 x 2 switch is fabricated in silicon-on-insulator by chemical etching. The switch presents an extinction ratio of 26 dB and a power consumption of 169 mW.
Li YT   +6 more
core  

Thermo-optic phase shifters based on silicon-on-insulator platform: state-of-the-art and a review. [PDF]

open access: yesFront Optoelectron, 2022
Liu S   +7 more
europepmc   +1 more source

Laser‐Assisted Phase Engineering of 2D MoS2 for Efficient Solution‐Processed Electronics

open access: yesAdvanced Materials, EarlyView.
Here, local laser‐assisted phase transition from solution‐processed phase‐pure 1T′ to 2H MoS2 is shown to critically depend on the irradiation atmosphere. While processing in air leads to damaged insulating regions, inert conditions yield semiconducting 2H domains, enabling direct field‐effect transistor patterning with optimized lateral 1T′‐2H MoS2 ...
Anna Zhuravlova   +10 more
wiley   +1 more source

Ferromagnetism of Molecular Beam Epitaxy‐grown Ultra‐thin Cr2Ge2Te6 Films Down to the Monolayer Limit on Si Substrates

open access: yesAdvanced Materials, EarlyView.
Uniform monolayer Cr2Ge2Te6 films are achieved on Si substrates by molecular beam epitaxy. Intrinsic ferromagnetism with perpendicular magnetic anisotropy is established in the films by anomalous Hall effect and superconducting quantum interference device measurements, albeit with strong magnetic fluctuations characteristic of its 2D nature.
Pengfei Ji   +15 more
wiley   +1 more source

Formation of MOS-transistors with isolation of active elements by oxiden porous silicon

open access: yesТехнологія та конструювання в електронній апаратурі, 2009
Ultrathin functional layers of MOS transistors require high-quality isolation of active elements. A new method for forming epitaxial structures for silicon-on-insulator technology based on porous silicon is proposed.
S. P. Novosyadlyi, V. M. Vivcharuk
doaj  

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration. [PDF]

open access: yesMicromachines (Basel), 2021
Hsu LH   +11 more
europepmc   +1 more source

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

open access: yesAdvanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen   +7 more
wiley   +1 more source

A Geometrically Transient Platform for Bioelectronic Implants

open access: yesAdvanced Materials, EarlyView.
Minimally invasive bioelectronic implants often compromise performance for smaller sizes. To resolve this optimization dilemma, a wireless bioelectronic implant with a transient geometry is introduced (MiFi). The origami‐inspired device miniaturizes up to sixfold for syringe insertion and autonomously unfolds post‐implantation.
Selin Olenik   +13 more
wiley   +1 more source

Raman Spectroscopy-Based Quality Control of "Silicon-On-Insulator" Nanowire Chips for the Detection of Brain Cancer-Associated MicroRNA in Plasma. [PDF]

open access: yesSensors (Basel), 2021
Malsagova KA   +16 more
europepmc   +1 more source

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