Results 131 to 140 of about 12,859 (264)
Shallow Au implantation into silicon-on-insulator slot ring resonator waveguide devices. [PDF]
Liu QS +6 more
europepmc +1 more source
Ultrathin lithium metal anodes (≤15 µm) offer a promising route to high‐energy‐density batteries due to their high capacity and low potential. This review presents design principles for ultrathin Li, evaluates fabrication strategies, and discusses challenges in liquid and solid‐state cells.
Cheng Wang +9 more
wiley +1 more source
Structural color due to guided-mode resonance in silicon-on-insulator irradiated by nanosecond laser pulses. [PDF]
Mizeikis V +8 more
europepmc +1 more source
Tailoring Phonon‐Driven Responses in α‐MoO3 through Isotopic Enrichment
ABSTRACT The implementation of polaritonic materials into nanoscale devices requires selective tuning of parameters to realize desired spectral or thermal responses. One robust material, α‐MoO3, an orthorhombic crystal boasting three distinct phonon dispersions, provides three polaritonic dispersions of hyperbolic phonon polaritons (HPhPs) across the ...
Thiago S. Arnaud +31 more
wiley +1 more source
Wafer-scale CMOS foundry silicon-on-insulator devices for integrated temporal pulse compression. [PDF]
Choi JW +6 more
europepmc +1 more source
A deep learning inverse‐design framework is established to create versatile reconfigurable terahertz metadevices. By synergizing deep learning with phase‐change materials, this approach enables on‐demand customization of multidimensional electromagnetic responses.
Yisheng Dong +11 more
wiley +1 more source
Integration of Er<sup>3+</sup> Emitters in Silicon-on-Insulator Nanodisk Metasurface. [PDF]
Bader J +6 more
europepmc +1 more source
A double‐sided mechanical interlocking strategy is developed to create robust electrical contact between polymer electrode and metal interconnect. The fibrous structure enables formation of thread–hole adhesion, which only breaks under bulk failure and achieves a record high interfacial energy exceeding 730 J·m−2. This adhesion secures the integrity of
Gang Li +6 more
wiley +1 more source
Silicon-on-Insulator (SOI) Lateral Power-Reduced Surface Field FinFET with High-Power Figure of Merit of 239.3 MW/cm<sup>2</sup>. [PDF]
Song CW, Lee T, Kim D, Kyoung S, Woo S.
europepmc +1 more source

