Results 121 to 130 of about 67,402,211 (299)

A surface-potential-based compact model for partially-depleted silicon-on-insulator MOSFETs

open access: yes, 2009
With the continuous scaling of CMOS technologies, Silicon-on-Insulator (SOI) technologies have become more competitive compared to bulk, due to their lower parasitic capacitances and leakage currents. The shift towards high frequency, low power circuitry,
Benson, James
core   +1 more source

Self‐Assembled Monolayers in p–i–n Perovskite Solar Cells: Molecular Design, Interfacial Engineering, and Machine Learning–Accelerated Material Discovery

open access: yesAdvanced Materials, EarlyView.
This review highlights the role of self‐assembled monolayers (SAMs) in perovskite solar cells, covering molecular engineering, multifunctional interface regulation, machine learning (ML) accelerated discovery, advanced device architectures, and pathways toward scalable fabrication and commercialization for high‐efficiency and stable single‐junction and
Asmat Ullah, Ying Luo, Stefaan De Wolf
wiley   +1 more source

A Concept of an Integral Optical Pressure Sensor

open access: yesПриборы и методы измерений
Today, an expanding application of automatic systems demands research and development of novel types of sensors suitable for special conditions. Specifically, microelectromechanical pressure sensors are among of the most widely implemented devices.
E. S. Barbin   +5 more
doaj   +1 more source

Azobenzene's Cross‐Scale Optics and Photonics: Molecular Photoswitching, Mesoscopic Material Motions, and Adaptive Devices

open access: yesAdvanced Materials, EarlyView.
Azobenzene photoswitches translate molecular‐scale E/Z photoisomerization into macroscopic material responses and device‐level photonic functions. This Review highlights how azobenzene research has evolved from molecular photochemistry to photoalignment, mass migration, photomechanics, and heat release, ultimately enabling holography, reconfigurable ...
Heeju Son   +20 more
wiley   +1 more source

Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel

open access: yesMicromachines
The continuous scaling down of MOSFETs is one of the present trends in semiconductor devices to increase device performance. Nevertheless, with scaling down beyond 22 nm technology, the performance of even the newer nanodevices with multi-gate ...
Potaraju Yugender   +5 more
doaj   +1 more source

Thermodynamic Limits to Molecular Doping in Conjugated Polymers: A Perspective on Phase Behavior and Miscibility

open access: yesAdvanced Materials, EarlyView.
Molecular doping of conjugated polymers is fundamentally constrained by thermodynamic phase behavior. This Perspective reframes doping efficiency and stability in terms of miscibility limits, binodals, and solvus boundaries, highlighting the role of effective interaction parameters and charge transfer.
Somayeh Kashani   +10 more
wiley   +1 more source

Testability and fault modeling of partially depleted silicon-on-insulator integrated circuits

open access: yes, 2002
textPartially Depleted Silicon-On-Insulator (SOI) technology has garnered more attention with regards to replacing traditional bulk silicon technology as the mainstream technology of choice for high performance / low power digital applications.
MacDonald, Eric William
core  

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