Results 151 to 160 of about 12,859 (264)

Measuring and Manipulating Density of States in Two‐Dimensional Materials With Electrochemical Capacitance

Advanced Materials Interfaces, EarlyView.
We report electrochemical quantum capacitance spectroscopy as an ambient, in situ probe for defect‐mediated electronic structure at 2D material interfaces. Using monolayer MoS2, the method resolves band edges and vacancy states, tracks sulfur‐vacancy evolution during hydrogen evolution, and links interfacial density‐of‐states changes to nearly ...
Mengyu Yan, Mitchell Kaiser, Maria L. Sushko, Xiaobin Liao, Hao Tang, Chun‐Chih Tseng, Matthew Yankowitz, Ying Xia, Jihui Yang, Jun Liu   +9 more
wiley   +1 more source

Suspended Slot Membrane Waveguide Based on Germanium-on-Silicon-on-Insulator at λ = 4.23 µm for CO₂ Monitoring. [PDF]

Micromachines (Basel)
Butt MA, Piramidowicz R.
europepmc   +1 more source

Angle-Sensitive Detector Based on Silicon-On-Insulator Photodiode Stacked with Surface Plasmon Antenna. [PDF]

Sensors (Basel), 2020
Nagarajan A, Hara S, Satoh H, Panchanathan AP, Inokawa H.   +4 more
europepmc   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

Impact of Total Ionizing Dose on Radio Frequency Performance of 22 nm Fully Depleted Silicon-On-Insulator nMOSFETs. [PDF]

Micromachines (Basel)
Yan Z, Liu H, Huang M, Wang S, Chen S, Zhou X, Huang J, Liu C.   +7 more
europepmc   +1 more source

Study of a hysteresis window of FinFET and fully-depleted silicon-on-insulator (FDSOI) MOSFET with ferroelectric capacitor. [PDF]

Nano Converg, 2020
Yoon C, Moon S, Shin C.
europepmc   +1 more source

Atomic Layer Deposition of Metallic Molybdenum Dioxide Thin Films Enabling High‐k Rutile Capacitors

Advanced Materials Interfaces, EarlyView.
The first direct atomic layer deposition (ALD) process of molybdenum dioxide (MoO2) thin films is reported using molybdenum(II) acetate dimer (Mo2(OAc)4) and oxygen (O2) as precursors at 235°C–275°C. The films are crystalline, exceptionally pure, and conductive.
Alexey Ganzhinov, Miika Mattinen, Marko Vehkamäki, Kenichiro Mizohata, Mykhailo Chundak, Georgi Popov, Paavo Porri, Mikko Ritala, Matti Putkonen   +8 more
wiley   +1 more source

A Time Mode Pulse Interleaver in a Silicon-on-Insulator Platform for Optical Analog-to-Digital Converters. [PDF]

Micromachines (Basel)
Tu D, Li Z, Yin Y, Guan H, Yu Z, Tian L, Jiang L, Li Y, Li Z, Fan Z.   +9 more
europepmc   +1 more source

Theoretical Investigation of Near-Infrared Fabry-Pérot Microcavity Graphene/Silicon Schottky Photodetectors Based on Double Silicon on Insulator Substrates. [PDF]

Micromachines (Basel), 2020
Casalino M.
europepmc   +1 more source

Label‐Free Detection of a Neurotransmitter Using an Aptamer‐Functionalized Amorphous IGZO Transistor

Advanced Materials Interfaces, EarlyView.
An aptamer‐functionalized amorphous IGZO thin‐film transistor enables label‐free electrical detection of the neurotransmitter serotonin under liquid‐gated operation. Stepwise surface functionalization ensures stable biomolecule integration and efficient electrostatic coupling.
Ngoc Thanh Ho, Sina Jamali, Nam‐Trung Nguyen, Tuan‐Khoa Nguyen   +3 more
wiley   +1 more source