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Metallurgy of Silicon and Silicon Carbide
2020Silicon belongs to VIa group of the Periodic Table of Elements, atomic number 14, atomic mass 28.08, electron shell configuration 3s23p2, exhibits oxidation state +4 (the most stable), +3, +2 and +1. The melting point of silicon is 1415 °C; the boiling point is 3250 °C. The silicon crystal lattice is cubic, face-centered diamond type.
Mikhail Gasik +2 more
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Diffusion of oxygen and silicon in silicon: Silicon monoxide model
Journal of Materials Research, 2001The diffusion of oxygen in silicon was modeled to result from the diffusion of dissolved silicon monoxide. The SiO molecule dissolved in the largest space in the diamond lattice of silicon, oriented in a 〈111〉 direction, with the oxygen lightly bonded to a network silicon atom.
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The donor concentration in silicon implanted silicon and silicon on sapphire
IEEE SOS/SOI Technology Conference, 2003Summary form only given. The effective number of carriers in self-implanted silicon on sapphire is studied. The penetration of the materials by the double solid phase epitaxy method (DSPE) is discussed. In order to measure the depth distribution of the implantation-induced donors, silicon was implanted in 2 ohm cm n ...
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Effects of graphene on various properties and applications of silicone rubber and silicone resin
Composites Part A: Applied Science and Manufacturing, 2021Xinxing Wang
exaly
Recent advances in UV/thermal curing silicone polymers
Chemical Engineering Journal, 2022Bo Jiang, Yudong Huang
exaly
The silicon-silicon dioxide system
Proceedings of the IEEE, 1969Study of the silicon-silicon dioxide system as a junction between a nearly ideal semiconductor and insulator has aroused both scientific and technological interest. Surface phenomena associated with this system are influenced by contamination and imperfections in the oxide, impurity redistribution in the silicon near the oxide, and finally by ...
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