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The donor concentration in silicon implanted silicon and silicon on sapphire
IEEE SOS/SOI Technology Conference, 2003Summary form only given. The effective number of carriers in self-implanted silicon on sapphire is studied. The penetration of the materials by the double solid phase epitaxy method (DSPE) is discussed. In order to measure the depth distribution of the implantation-induced donors, silicon was implanted in 2 ohm cm n ...
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2013
Porous silicon (PSi) samples were prepared by galvanostatic electrochemical anodization of epitaxial silicon, polycrystalline silicon and silicon on insulator layers. Structural and optical properties of prepared samples were investigated by Raman and photoluminescence (PL) spectroscopy, field emission scanning electron microscopy (FE-SEM) and energy ...
Đerek, Vedran +7 more
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Porous silicon (PSi) samples were prepared by galvanostatic electrochemical anodization of epitaxial silicon, polycrystalline silicon and silicon on insulator layers. Structural and optical properties of prepared samples were investigated by Raman and photoluminescence (PL) spectroscopy, field emission scanning electron microscopy (FE-SEM) and energy ...
Đerek, Vedran +7 more
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Diffusion of oxygen and silicon in silicon: Silicon monoxide model
Journal of Materials Research, 2001The diffusion of oxygen in silicon was modeled to result from the diffusion of dissolved silicon monoxide. The SiO molecule dissolved in the largest space in the diamond lattice of silicon, oriented in a 〈111〉 direction, with the oxygen lightly bonded to a network silicon atom.
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Effects of graphene on various properties and applications of silicone rubber and silicone resin
Composites Part A: Applied Science and Manufacturing, 2021Xinxing Wang, Zhenhao Wang
exaly
Recent advances in UV/thermal curing silicone polymers
Chemical Engineering Journal, 2022Yudong Huang, Bo Jiang, Xiangrong Shi
exaly

