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Crystalline anodic silicon dioxide on silicon
Physica Status Solidi (a), 1978Multi-layer oxide film grows in anodic oxidation of silicon p-type in 0.1 N water diluted hydrofluoric acid. The inner layer of the oxide film on the silicon monocrystal substrate is of α-quartz, while the outer layer of the oxide film to the electrolyte interface is amorphous.
A. A. Konova, M. G. Michailov
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Microcrystalline silicon formation by silicon nanoparticles
Journal of Applied Physics, 2008Thin silicon films are of great importance for large-area electronic applications, for example, as the basis for switching electronics in flat-panel display devices or as the active layer of solar cells. In this paper, we show that silicon nanoparticles have the potential to be used as raw material for further processing toward a microcrystalline ...
Schierning, G. +7 more
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Trends in silicon-on-silicon multichip modules
IEEE Design & Test of Computers, 1993Three example applications of silicon-on-silicon multichip modules are discussed: a module used in a parallel processor, a low-cost silicon module for a high-volume consumer product application, and a high-performance digital telecommunications module.
Robert C. Frye +3 more
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Applied Physics Letters, 1982
A wide variety of measurements on silicon grain boundaries shows that the electronic properties of such boundaries are much like those of Si surfaces in all essential respects. Moreover, the properties of ’’clean’’ surfaces and lightly contaminated surfaces can be studied on many crystallographic orientations of the interfaces without the need for ...
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A wide variety of measurements on silicon grain boundaries shows that the electronic properties of such boundaries are much like those of Si surfaces in all essential respects. Moreover, the properties of ’’clean’’ surfaces and lightly contaminated surfaces can be studied on many crystallographic orientations of the interfaces without the need for ...
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From Silicon Cell to Silicon Human
2011This chapter discusses the silicon cell paradigm, i.e. the existing systems biology activity of making experiment-based computer replica of parts of biological systems. Now that such mathematical models are accessible to in silico experimentation through the World-Wide Web, a new future has come to biology.
Westerhoff, Hans V.; id_orcid 0000-0002-0443-6114 +8 more
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Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride
Technical Physics Letters, 2018Raman spectra of films of nearly stoichiometric amorphous silicon nitride (a-Si3N4) reveal a contribution due to local oscillations of silicon–silicon (Si–Si) bonds. This observation directly confirms that the almost stoichiometric a-Si3N4 contains Si–Si bonds, which, according to theoretical predictions, act as electron and hole traps that are ...
V. A. Volodin, V. A. Gritsenko, A. Chin
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Silica, Silicon and Silicones...Unraveling the Mystery
1996Silicon is an element - the second most abundant element in terrestrial earth. However, silicon is never found in nature as the raw element, but rather in combination with oxygen to yield various forms of silicas, silicates, glasses, and sand. Silicon in this combination with oxygen, makes up 75% of the Earth’s crust. The name for the element, silicium
T H, Lane, S A, Burns
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Silicon-hydrogen-acceptor complexes in crystalline silicon
Physical Review B, 1992An extensive investigation of the equilibrium sites of H in p-type silicon has been performed in order to clarify the inffluence of the specific impurity on the geometry of the silicon-hydrogen-acceptor complexes. Previous studies focused onto the B and Al cases have been extended to the isovalent acceptors Ga and In, making clear the relevance of the ...
A. Amore Bonapasta +2 more
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Journal of The Electrochemical Society, 1990
Silicon/silicon interfaces were prepared by wafer bonding using the silicon‐to‐silicon direct bonding method at temperatures below 1000°C. The bonded samples were prepared using wafers with hydrophilic and hydrophobic surface properties. The density of voids at the bonded interface and the electrical properties of the interfaces were investigated.
Stefan Bengtsson, Olof Engström
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Silicon/silicon interfaces were prepared by wafer bonding using the silicon‐to‐silicon direct bonding method at temperatures below 1000°C. The bonded samples were prepared using wafers with hydrophilic and hydrophobic surface properties. The density of voids at the bonded interface and the electrical properties of the interfaces were investigated.
Stefan Bengtsson, Olof Engström
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Japanese Journal of Applied Physics, 1972
The influences of annealing at high temperatures and of impurity diffusion such as phosphorus and boron on fast surface states and instabilities under bias-temperature treatment were investigated. The fast surface states and instabilities increased by annealing in nitrogen, argon and oxygen. The instabilities were caused by the increase in conductivity
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The influences of annealing at high temperatures and of impurity diffusion such as phosphorus and boron on fast surface states and instabilities under bias-temperature treatment were investigated. The fast surface states and instabilities increased by annealing in nitrogen, argon and oxygen. The instabilities were caused by the increase in conductivity
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