Results 211 to 220 of about 5,160 (265)

SILICON NANOCRYSTALS ENABLING SILICON PHOTONICS

2010
Silicon Photonics is an emerging field of research and technology, where nano-silicon can play a fundamental role. In this chapter, the main building blocks of Silicon Photonics ( waveguides, modulators, sources and detectors) are reviewed and compared to their counterparts made by Si nanocrystals.
Daldosso, Nicola, Pavesi, Lorenzo
openaire   +3 more sources

Silicon-On-Silicon Packaging

IEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1984
Honeywell's new packaging technique uses silicon as a multichip substrate. Multiple integrated circuit (IC) chips are flip bonded by controlled collapse joining to a silicon substrate. The silicon substratc provides the interconnections between chips and the next level of interface.
R. Spielberger, C. Huang, W. Nunne, A. Mones, D. Fett, F. Hampton   +5 more
openaire   +1 more source

Microcrystalline silicon formation by silicon nanoparticles

Journal of Applied Physics, 2008
Thin silicon films are of great importance for large-area electronic applications, for example, as the basis for switching electronics in flat-panel display devices or as the active layer of solar cells. In this paper, we show that silicon nanoparticles have the potential to be used as raw material for further processing toward a microcrystalline ...
Schierning, G., Theissmann, R., Wiggers, H., Sudfeld, D., Ebbers, A., Franke, D., Witusiewicz, V. T., Apel, M.   +7 more
openaire   +2 more sources

Trends in silicon-on-silicon multichip modules

IEEE Design & Test of Computers, 1993
Three example applications of silicon-on-silicon multichip modules are discussed: a module used in a parallel processor, a low-cost silicon module for a high-volume consumer product application, and a high-performance digital telecommunications module.
Robert C. Frye, King L. Tai, Maureen Y. Lau, Thaddeus J. Gabara   +3 more
openaire   +1 more source

Silicon/silicon oxide and silicon/silicon nitride multilayers for XUV optical applications

SPIE Proceedings, 1991
Si/Si02 and Si/Si3N4 multilayers have been fabricated using a locally made reactive diode if-sputtering systern. 'Ihe layer alternation is obtained by modulating a partial pressure of oxygen or nitrogen near the sample using a silicon target and argon as sputtering gas.
Boher, Pierre, Houdy, Philippe, Hennet, Louis, Delaboudiniere, Jean-Pierre, Kuehne, Mikhael, Mueller, Peter, Li, Zhigang, Smith, David   +7 more
openaire   +1 more source

Crystalline anodic silicon dioxide on silicon

Physica Status Solidi (a), 1978
Multi-layer oxide film grows in anodic oxidation of silicon p-type in 0.1 N water diluted hydrofluoric acid. The inner layer of the oxide film on the silicon monocrystal substrate is of α-quartz, while the outer layer of the oxide film to the electrolyte interface is amorphous.
A. A. Konova, M. G. Michailov
openaire   +1 more source

Silicon-silicon interfaces

Applied Physics Letters, 1982
A wide variety of measurements on silicon grain boundaries shows that the electronic properties of such boundaries are much like those of Si surfaces in all essential respects. Moreover, the properties of ’’clean’’ surfaces and lightly contaminated surfaces can be studied on many crystallographic orientations of the interfaces without the need for ...
openaire   +1 more source

From Silicon Cell to Silicon Human

2011
This chapter discusses the silicon cell paradigm, i.e. the existing systems biology activity of making experiment-based computer replica of parts of biological systems. Now that such mathematical models are accessible to in silico experimentation through the World-Wide Web, a new future has come to biology.
Westerhoff, Hans V.; id_orcid 0000-0002-0443-6114, Verma, Malkhey, Bruggeman, Frank J., Kolodkin, Alexey, Swat, Maciej, Hayes, Neil, Nardelli, Maria, Bakker, Barbara M., Snoep, Jacky L.   +8 more
openaire   +3 more sources

Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride

Technical Physics Letters, 2018
Raman spectra of films of nearly stoichiometric amorphous silicon nitride (a-Si3N4) reveal a contribution due to local oscillations of silicon–silicon (Si–Si) bonds. This observation directly confirms that the almost stoichiometric a-Si3N4 contains Si–Si bonds, which, according to theoretical predictions, act as electron and hole traps that are ...
V. A. Volodin, V. A. Gritsenko, A. Chin
openaire   +1 more source

Silicones for Maxillofacial Prostheses and Their Modifications in Service [PDF]

Materials
VÍCTOR Vlad Costan, Iuliana Stoica, Carmen Racles   +2 more
exaly   +2 more sources