Results 221 to 230 of about 5,160 (265)

Silica, Silicon and Silicones...Unraveling the Mystery

1996
Silicon is an element - the second most abundant element in terrestrial earth. However, silicon is never found in nature as the raw element, but rather in combination with oxygen to yield various forms of silicas, silicates, glasses, and sand. Silicon in this combination with oxygen, makes up 75% of the Earth’s crust. The name for the element, silicium
T H, Lane, S A, Burns
openaire   +2 more sources

Low‐Temperature Preparation of Silicon/Silicon Interfaces by the Silicon‐to‐Silicon Direct Bonding Method

Journal of The Electrochemical Society, 1990
Silicon/silicon interfaces were prepared by wafer bonding using the silicon‐to‐silicon direct bonding method at temperatures below 1000°C. The bonded samples were prepared using wafers with hydrophilic and hydrophobic surface properties. The density of voids at the bonded interface and the electrical properties of the interfaces were investigated.
Stefan Bengtsson, Olof Engström
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Silicon-hydrogen-acceptor complexes in crystalline silicon

Physical Review B, 1992
An extensive investigation of the equilibrium sites of H in p-type silicon has been performed in order to clarify the inffluence of the specific impurity on the geometry of the silicon-hydrogen-acceptor complexes. Previous studies focused onto the B and Al cases have been extended to the isovalent acceptors Ga and In, making clear the relevance of the ...
A. Amore Bonapasta, P. Giannozzi, CAPIZZI, Mario   +2 more
openaire   +3 more sources

Electrical Charactristics of Polycrystalline Silicon-Silicon Nitride-Silicon Dioxide-Silicon Structures

Japanese Journal of Applied Physics, 1972
The influences of annealing at high temperatures and of impurity diffusion such as phosphorus and boron on fast surface states and instabilities under bias-temperature treatment were investigated. The fast surface states and instabilities increased by annealing in nitrogen, argon and oxygen. The instabilities were caused by the increase in conductivity
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Porous Silicon by Galvanostatic Electrochemical Anodisation of Epitaxial Silicon, Polycrystalline Silicon and Silicon on Insulator Layers

2013
Porous silicon (PSi) samples were prepared by galvanostatic electrochemical anodization of epitaxial silicon, polycrystalline silicon and silicon on insulator layers. Structural and optical properties of prepared samples were investigated by Raman and photoluminescence (PL) spectroscopy, field emission scanning electron microscopy (FE-SEM) and energy ...
Đerek, Vedran, Gamulin, Ozren, Ivanda, Mile, Balarin, Maja, Kosović, Marin, Ristić, Davor, Musić, Svetozar, Ristić, Mira   +7 more
openaire   +1 more source

The donor concentration in silicon implanted silicon and silicon on sapphire

IEEE SOS/SOI Technology Conference, 2003
Summary form only given. The effective number of carriers in self-implanted silicon on sapphire is studied. The penetration of the materials by the double solid phase epitaxy method (DSPE) is discussed. In order to measure the depth distribution of the implantation-induced donors, silicon was implanted in 2 ohm cm n ...
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Diffusion of oxygen and silicon in silicon: Silicon monoxide model

Journal of Materials Research, 2001
The diffusion of oxygen in silicon was modeled to result from the diffusion of dissolved silicon monoxide. The SiO molecule dissolved in the largest space in the diamond lattice of silicon, oriented in a 〈111〉 direction, with the oxygen lightly bonded to a network silicon atom.
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Siliconized silicon carbide

2021
Andrew J. Ruys, Ian G. Crouch
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Silicon

Nutrition Reviews, 1984
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Silicones in dermatological topical drug formulation: Overview and advances

International Journal of Pharmaceutics, 2022
Anna Lechanteur, Hope T Sounouvou, Brigitte Evrard   +2 more
exaly