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Journal of The Electrochemical Society, 1990
Silicon/silicon interfaces were prepared by wafer bonding using the silicon‐to‐silicon direct bonding method at temperatures below 1000°C. The bonded samples were prepared using wafers with hydrophilic and hydrophobic surface properties. The density of voids at the bonded interface and the electrical properties of the interfaces were investigated.
Stefan Bengtsson, Olof Engström
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Silicon/silicon interfaces were prepared by wafer bonding using the silicon‐to‐silicon direct bonding method at temperatures below 1000°C. The bonded samples were prepared using wafers with hydrophilic and hydrophobic surface properties. The density of voids at the bonded interface and the electrical properties of the interfaces were investigated.
Stefan Bengtsson, Olof Engström
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Japanese Journal of Applied Physics, 1972
The influences of annealing at high temperatures and of impurity diffusion such as phosphorus and boron on fast surface states and instabilities under bias-temperature treatment were investigated. The fast surface states and instabilities increased by annealing in nitrogen, argon and oxygen. The instabilities were caused by the increase in conductivity
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The influences of annealing at high temperatures and of impurity diffusion such as phosphorus and boron on fast surface states and instabilities under bias-temperature treatment were investigated. The fast surface states and instabilities increased by annealing in nitrogen, argon and oxygen. The instabilities were caused by the increase in conductivity
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The donor concentration in silicon implanted silicon and silicon on sapphire
IEEE SOS/SOI Technology Conference, 2003Summary form only given. The effective number of carriers in self-implanted silicon on sapphire is studied. The penetration of the materials by the double solid phase epitaxy method (DSPE) is discussed. In order to measure the depth distribution of the implantation-induced donors, silicon was implanted in 2 ohm cm n ...
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2013
Porous silicon (PSi) samples were prepared by galvanostatic electrochemical anodization of epitaxial silicon, polycrystalline silicon and silicon on insulator layers. Structural and optical properties of prepared samples were investigated by Raman and photoluminescence (PL) spectroscopy, field emission scanning electron microscopy (FE-SEM) and energy ...
Đerek, Vedran +7 more
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Porous silicon (PSi) samples were prepared by galvanostatic electrochemical anodization of epitaxial silicon, polycrystalline silicon and silicon on insulator layers. Structural and optical properties of prepared samples were investigated by Raman and photoluminescence (PL) spectroscopy, field emission scanning electron microscopy (FE-SEM) and energy ...
Đerek, Vedran +7 more
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Diffusion of oxygen and silicon in silicon: Silicon monoxide model
Journal of Materials Research, 2001The diffusion of oxygen in silicon was modeled to result from the diffusion of dissolved silicon monoxide. The SiO molecule dissolved in the largest space in the diamond lattice of silicon, oriented in a 〈111〉 direction, with the oxygen lightly bonded to a network silicon atom.
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Advances in Bioinspired Superhydrophobic Surfaces Made from Silicones: Fabrication and Application
Polymers, 2023Moyuan Cao, Haoyu Bai
exaly
Self-Healing Antimicrobial Silicones—Mechanisms and Applications
Polymers, 2023Anna Kowalewska +1 more
exaly