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Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride
Technical Physics Letters, 2018Raman spectra of films of nearly stoichiometric amorphous silicon nitride (a-Si3N4) reveal a contribution due to local oscillations of silicon–silicon (Si–Si) bonds. This observation directly confirms that the almost stoichiometric a-Si3N4 contains Si–Si bonds, which, according to theoretical predictions, act as electron and hole traps that are ...
V. A. Volodin, V. A. Gritsenko, A. Chin
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Applied Physics Letters, 1982
A wide variety of measurements on silicon grain boundaries shows that the electronic properties of such boundaries are much like those of Si surfaces in all essential respects. Moreover, the properties of ’’clean’’ surfaces and lightly contaminated surfaces can be studied on many crystallographic orientations of the interfaces without the need for ...
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A wide variety of measurements on silicon grain boundaries shows that the electronic properties of such boundaries are much like those of Si surfaces in all essential respects. Moreover, the properties of ’’clean’’ surfaces and lightly contaminated surfaces can be studied on many crystallographic orientations of the interfaces without the need for ...
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From Silicon Cell to Silicon Human
2011This chapter discusses the silicon cell paradigm, i.e. the existing systems biology activity of making experiment-based computer replica of parts of biological systems. Now that such mathematical models are accessible to in silico experimentation through the World-Wide Web, a new future has come to biology.
Westerhoff, Hans V. +8 more
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Silica, Silicon and Silicones...Unraveling the Mystery
1996Silicon is an element - the second most abundant element in terrestrial earth. However, silicon is never found in nature as the raw element, but rather in combination with oxygen to yield various forms of silicas, silicates, glasses, and sand. Silicon in this combination with oxygen, makes up 75% of the Earth’s crust. The name for the element, silicium
T H, Lane, S A, Burns
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Journal of The Electrochemical Society, 1990
Silicon/silicon interfaces were prepared by wafer bonding using the silicon‐to‐silicon direct bonding method at temperatures below 1000°C. The bonded samples were prepared using wafers with hydrophilic and hydrophobic surface properties. The density of voids at the bonded interface and the electrical properties of the interfaces were investigated.
Stefan Bengtsson, Olof Engström
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Silicon/silicon interfaces were prepared by wafer bonding using the silicon‐to‐silicon direct bonding method at temperatures below 1000°C. The bonded samples were prepared using wafers with hydrophilic and hydrophobic surface properties. The density of voids at the bonded interface and the electrical properties of the interfaces were investigated.
Stefan Bengtsson, Olof Engström
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Silicon-hydrogen-acceptor complexes in crystalline silicon
Physical Review B, 1992An extensive investigation of the equilibrium sites of H in p-type silicon has been performed in order to clarify the inffluence of the specific impurity on the geometry of the silicon-hydrogen-acceptor complexes. Previous studies focused onto the B and Al cases have been extended to the isovalent acceptors Ga and In, making clear the relevance of the ...
A. Amore Bonapasta +2 more
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Japanese Journal of Applied Physics, 1972
The influences of annealing at high temperatures and of impurity diffusion such as phosphorus and boron on fast surface states and instabilities under bias-temperature treatment were investigated. The fast surface states and instabilities increased by annealing in nitrogen, argon and oxygen. The instabilities were caused by the increase in conductivity
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The influences of annealing at high temperatures and of impurity diffusion such as phosphorus and boron on fast surface states and instabilities under bias-temperature treatment were investigated. The fast surface states and instabilities increased by annealing in nitrogen, argon and oxygen. The instabilities were caused by the increase in conductivity
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2013
Porous silicon (PSi) samples were prepared by galvanostatic electrochemical anodization of epitaxial silicon, polycrystalline silicon and silicon on insulator layers. Structural and optical properties of prepared samples were investigated by Raman and photoluminescence (PL) spectroscopy, field emission scanning electron microscopy (FE-SEM) and energy ...
Đerek, Vedran +7 more
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Porous silicon (PSi) samples were prepared by galvanostatic electrochemical anodization of epitaxial silicon, polycrystalline silicon and silicon on insulator layers. Structural and optical properties of prepared samples were investigated by Raman and photoluminescence (PL) spectroscopy, field emission scanning electron microscopy (FE-SEM) and energy ...
Đerek, Vedran +7 more
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Metallurgy of Silicon and Silicon Carbide
2020Silicon belongs to VIa group of the Periodic Table of Elements, atomic number 14, atomic mass 28.08, electron shell configuration 3s23p2, exhibits oxidation state +4 (the most stable), +3, +2 and +1. The melting point of silicon is 1415 °C; the boiling point is 3250 °C. The silicon crystal lattice is cubic, face-centered diamond type.
Mikhail Gasik +2 more
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Diffusion of oxygen and silicon in silicon: Silicon monoxide model
Journal of Materials Research, 2001The diffusion of oxygen in silicon was modeled to result from the diffusion of dissolved silicon monoxide. The SiO molecule dissolved in the largest space in the diamond lattice of silicon, oriented in a 〈111〉 direction, with the oxygen lightly bonded to a network silicon atom.
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