Results 211 to 220 of about 253,400 (298)

Magic state injection on IBM quantum processors above the distillation threshold. [PDF]

Sci Rep
Kim Y, Sevior M, Usman M.
europepmc   +1 more source

Dual‐Programmable Architected Magnetic Soft Materials: Tuning Mechano–Electric Responses by Inverse Design

Advanced Functional Materials, EarlyView.
ABSTRACT Materials that can deform, sense, and autonomously generate power in response to wireless magnetic fields, through both magnetic‐actuated shape transformation and charge generation, are an emerging focus in advanced functional materials research.
Zhi Zhao, Xiaojia Shelly Zhang
wiley   +1 more source

Mature fault mechanics revealed by the highly efficient 2025 Mandalay earthquake. [PDF]

Nat Commun
Lindsey EO, Kuo YT, Wang Y, Thant M, Tin TZH.   +4 more
europepmc   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Temporal Consistency for Reliability Enhancement in Correlation-Based Time-Frequency Domain Reflectometry. [PDF]

Sensors (Basel)
Lee JB, Lim HS, Lee CK.
europepmc   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Adaptive overcurrent protection considering fault current limiters effect. [PDF]

Sci Rep
Mahmoud RA, Ghaly KG, Hasan SA.
europepmc   +1 more source

Critical Role of Polymer Gate Dielectrics on the Charge Carrier Transport in Perovskite Field‐Effect Transistors

Advanced Functional Materials, EarlyView.
Charge transport in 2D tin perovskite FETs is shown to be governed by dielectric interface behavior. Polar polymer dielectrics induce dipolar disorder that localizes carriers, whereas nonpolar polymers suppress trapping and enable superior charge transport, ensuring stable and reliable transistor operation. ABSTRACT Understanding the role of interfaces
Chongyao Li, Zhitian Ling, Pawel Czulkin, Paul W. M. Blom, Wojciech Pisula, Tomasz Marszalek   +5 more
wiley   +1 more source

ANN-based fault classification and localization with optimized PMU deployment for transmission systems. [PDF]

Sci Rep
Malini T, Thirumoorthi P, Lakshmi K.
europepmc   +1 more source