Results 11 to 20 of about 3,262 (177)

Radiation Hardness Study of Single-Photon Avalanche Diode for Space and High Energy Physics Applications. [PDF]

Sensors (Basel), 2022
Wu ML, Ripiccini E, Kizilkan E, Gramuglia F, Keshavarzian P, Fenoglio CA, Morimoto K, Charbon E.   +7 more
europepmc   +2 more sources

Advances in near-infrared avalanche diode single-photon detectors

Chip, 2022
Avalanche-photodiode-based near-infrared single-photon detectors have seen rapid development in the last two decades because of their enormous internal gain, high sensitivity, fast response, small volume, and ease of integration.
Chen Liu, Hai-Feng Ye, Yan-Li Shi
doaj   +1 more source

Modeling and Analysis of Capacitive Relaxation Quenching in a Single Photon Avalanche Diode (SPAD) Applied to a CMOS Image Sensor. [PDF]

Sensors (Basel), 2020
Inoue A, Okino T, Koyama S, Hirose Y.
europepmc   +2 more sources

Fully-Integrated Dickson Converters for Single Photon Avalanche Diode Arrays

IEEE Access, 2021
This article presents a novel low EMI technique to regulate the output voltage of fully-integrated switched capacitor Dickson type step-up DC/DC converters for SPAD arrays implemented in the Silterra 0.13 μm HV-CMOS process.
Simon Kennedy, Daniel Morrison, Dennis Delic, Mehmet Rasit Yuce, Jean-Michel Redoute   +4 more
doaj   +1 more source

An Ultrafast Active Quenching Active Reset Circuit with 50% SPAD Afterpulsing Reduction in a 28 nm FD-SOI CMOS Technology Using Body Biasing Technique

Sensors, 2021
An ultrafast Active Quenching—Active Reset (AQAR) circuit is presented for the afterpulsing reduction in a Single Photon Avalanche Diode (SPAD). The proposed circuit is designed in a 28 nm Fully Depleted Silicon On Insulator (FD-SOI) CMOS technology.
Mohammadreza Dolatpoor Lakeh, Jean-Baptiste Kammerer, Enagnon Aguénounon, Dylan Issartel, Jean-Baptiste Schell, Sven Rink, Andreia Cathelin, Francis Calmon, Wilfried Uhring   +8 more
doaj   +1 more source

Single-Photon Avalanche Diode with Enhanced NIR-Sensitivity for Automotive LIDAR Systems. [PDF]

Sensors (Basel), 2016
Takai I, Matsubara H, Soga M, Ohta M, Ogawa M, Yamashita T.   +5 more
europepmc   +2 more sources

A novel full-chip afterpulsing evaluation technique for 116 × 160 Ge-on-Si SPAD array [PDF]

APL Photonics
This Letter presents a novel on-chip afterpulsing characterization method demonstrated using gated-mode short-wave infrared single photon avalanche diode arrays, effectively overcoming the measurement limitations of conventional methods.
Chi-En Chen, Hon-Yih Tu, Shih-Min Huang, Pi-Ju Cheng, Ming-Chieh Hsu, Tzu-Jui Wang, Shang-Fu Yeh, Calvin Yi-Ping Chao, Jau-Yang Wu, Chao-Hsin Wu   +9 more
doaj   +1 more source

Accurate model for single-photon avalanche diodes

IET Circuits, Devices & Systems, 2008
An accurate model useful for simulating single-photon avalanche diodes including biasing circuits is presented. The authors developed the model using Verilog-A codes to describe both static and dynamic behaviours. The derived model fits experimental results extracted from practical devices better than the one used in the open literature.
R. MITA, PALUMBO, Gaetano, G. FALLICA
openaire   +2 more sources

A 130-nm CMOS single-photon avalanche diode [PDF]

SPIE Proceedings, 2007
The first implementation of a single photon avalanche diode (SPAD) is reported in 130nm CMOS technology. The SPAD is fabricated as p+/nwell junction with octagonal shape. Premature edge breakdown is prevented through a guard ring of p-well around the p+ anode.
Niclass, Cristiano, Gersbach, Marek, Henderson, Robert K., Grant, Lindsay, Charbon, Edoardo   +4 more
openaire   +2 more sources

Current-Assisted SPAD with Improved p-n Junction and Enhanced NIR Performance

Sensors, 2020
Single-photon avalanche diodes (SPADs) fabricated in conventional CMOS processes typically have limited near infra-red (NIR) sensitivity. This is the consequence of isolating the SPADs in a lowly-doped deep N-type well.
Gobinath Jegannathan, Thomas Van den Dries, Maarten Kuijk   +2 more
doaj   +1 more source