Results 11 to 20 of about 5,255,782 (210)

Advances in near-infrared avalanche diode single-photon detectors

Chip, 2022
Avalanche-photodiode-based near-infrared single-photon detectors have seen rapid development in the last two decades because of their enormous internal gain, high sensitivity, fast response, small volume, and ease of integration.
Chen Liu, Hai-Feng Ye, Yan-Li Shi
doaj   +2 more sources

A 130-nm CMOS single-photon avalanche diode [PDF]

SPIE Proceedings, 2007
The first implementation of a single photon avalanche diode (SPAD) is reported in 130nm CMOS technology. The SPAD is fabricated as p+/nwell junction with octagonal shape. Premature edge breakdown is prevented through a guard ring of p-well around the p+ anode.
Niclass, Cristiano, Gersbach, Marek, Henderson, Robert K., Grant, Lindsay, Charbon, Edoardo   +4 more
openaire   +4 more sources

SPADA: single-photon avalanche diode arrays

IEEE Photonics Technology Letters, 2005
We present a silicon monolithic array of 60 photon counters (single-photon avalanche diode array) for two-dimensional imaging, with detection efficiency higher than 30% in the visible range. The fabricated solid-state array is rugged and easy to be integrated in the optical system.
ZAPPA, FRANCO, GULINATTI, ANGELO, P. Maccagnani, TISA, SIMONE, COVA, SERGIO   +4 more
openaire   +5 more sources

Pion Detection Using Single Photon Avalanche Diodes

Sensors, 2023
We present the first reported use of a CMOS-compatible single photon avalanche diode (SPAD) array for the detection of high-energy charged particles, specifically pions, using the Super Proton Synchrotron at CERN, the European Organization for Nuclear ...
Anthony Frederick Bulling, Ian Underwood
doaj   +3 more sources

Photon-Number-Resolving Detection with Highly Efficient InGaAs/InAlAs Single-Photon Avalanche Diode

Photonics
Photon-number-resolving detectors are in high demand for applications in photonic quantum technology. In this study, we demonstrate the photon-number-resolving capabilities of our self-developed, highly efficient InGaAs/InAlAs single-photon avalanche ...
Yi-Shan Lee, Tzu-Yang Chen, Yu-Ju Chen, Wei-Hong Kan, Xue-Wen Liu, Jin-Wei Shi   +5 more
doaj   +2 more sources

A Capacitive Quenching Circuit for Use with Single Photon Avalanche Detectors [PDF]

, 2013
In this thesis a Capacitive Quenching Circuit (CQC) is modelled using Linear Technology's Simulation Program with Integrated Circuit Emphasis (LT SPICE). Key components are optimised and the entire circuit is modelled. Once satisfied with the simulation,
Goldberg, Graham R
core   +6 more sources

Fully-Integrated Dickson Converters for Single Photon Avalanche Diode Arrays

IEEE Access, 2021
This article presents a novel low EMI technique to regulate the output voltage of fully-integrated switched capacitor Dickson type step-up DC/DC converters for SPAD arrays implemented in the Silterra 0.13 μm HV-CMOS process.
Simon Kennedy, Daniel Morrison, Dennis Delic, Mehmet Rasit Yuce, Jean-Michel Redoute   +4 more
doaj   +1 more source

An Ultrafast Active Quenching Active Reset Circuit with 50% SPAD Afterpulsing Reduction in a 28 nm FD-SOI CMOS Technology Using Body Biasing Technique

Sensors, 2021
An ultrafast Active Quenching—Active Reset (AQAR) circuit is presented for the afterpulsing reduction in a Single Photon Avalanche Diode (SPAD). The proposed circuit is designed in a 28 nm Fully Depleted Silicon On Insulator (FD-SOI) CMOS technology.
Mohammadreza Dolatpoor Lakeh, Jean-Baptiste Kammerer, Enagnon Aguénounon, Dylan Issartel, Jean-Baptiste Schell, Sven Rink, Andreia Cathelin, Francis Calmon, Wilfried Uhring   +8 more
doaj   +1 more source

A novel full-chip afterpulsing evaluation technique for 116 × 160 Ge-on-Si SPAD array [PDF]

APL Photonics
This Letter presents a novel on-chip afterpulsing characterization method demonstrated using gated-mode short-wave infrared single photon avalanche diode arrays, effectively overcoming the measurement limitations of conventional methods.
Chi-En Chen, Hon-Yih Tu, Shih-Min Huang, Pi-Ju Cheng, Ming-Chieh Hsu, Tzu-Jui Wang, Shang-Fu Yeh, Calvin Yi-Ping Chao, Jau-Yang Wu, Chao-Hsin Wu   +9 more
doaj   +1 more source

Ge-on-Si single-photon avalanche diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm [PDF]

, 2013
The design, modeling, fabrication, and characterization of single-photon avalanche diode detectors with an epitaxial Ge absorption region grown directly on Si are presented.
Lever, LJM, Paul, D.J., Buller, GS, Ikonic, Zoran, Warburton, Ryan E, Ikonic, Z, Myronov, Maksym, Knights, AP, Leadley, D. R. (David R.), Gallacher, Kevin, Kelsall, Robert W., Pilgrim, Neil J, Pilgrim, NJ, Paul, DJ, Myronov, M., Paul, Douglas J. (Professor of Semiconductor Devices), Allred, P, Intermite, G., Leadley, David R, Huante-Ceron, E, Kelsall, RW, Lever, Leon J M, Pilgrim, Neil J., Kelsall, R.W., Allred, P., Myronov, M, Huante-Ceron, Edgar, Lever, Leon J. M., Lever, L.J.M., Leadley, D.R., Knights, A.P., Knights, Andrew P., Allred, Phil, Ikonic, Z., Huante-Ceron, E., Warburton, RE, Knights, Andrew P, Pilgrim, N.J., Buller, G.S., Intermite, G, Paul, Douglas J, Warburton, Ryan E., Leadley, DR, Intermite, Giuseppe, Gallacher, K, Warburton, R.E., Buller, G. S. (Gerald S.), Kelsall, Robert W, Buller, Gerald Stuart   +48 more
core   +1 more source