Results 11 to 20 of about 10,142 (134)

Single-Photon Sources Based on Novel Color Centers in Silicon Carbide P–I–N Diodes: Combining Theory and Experiment

open access: yesNano-Micro Letters, 2021
Highlights Theory of electrically driven single-photon sources based on color centers in silicon carbide p–i–n diodes. New method of determining the electron and hole capture cross sections by an optically active point defect (color center) from the ...
Igor A. Khramtsov, Dmitry Yu. Fedyanin
doaj   +1 more source

Coupled InGaAs Quantum Dots for Electro-Optic Modulation

open access: yesCrystals, 2021
We investigated the growth of vertically coupled In0.75Ga0.25As quantum dots (QDs) by varying the GaAs spacer thickness (d). Vertically-aligned triple-layer QDs of uniform size and highest accumulated strain are formed with d = 5 nm.
Kuei-Ya Chuang   +2 more
doaj   +1 more source

Electroluminescence from Localized Defects in Zinc Oxide: Toward Electrically Driven Single Photon Sources at Room Temperature [PDF]

open access: yesACS Applied Materials & Interfaces, 2015
Single photon sources are required for a wide range of applications in quantum information science, quantum cryptography, and quantum communications. However, the majority of room temperature emitters to date are only excited optically, which limits their proper integration into scalable devices.
Sumin, Choi   +5 more
openaire   +2 more sources

Superinjection in Diamond p - i - n Diodes: Bright Single-Photon Electroluminescence of Color Centers Beyond the Doping Limit [PDF]

open access: yesPhysical Review Applied, 2019
Efficient generation of single photons on demand at a high repetition rate is a key to the practical realization of quantum-communication networks and optical quantum computations. Color centers in diamond are considered to be the most promising platform for building such single-photon sources owing to the outstanding emission properties of color ...
Khramtsov, Igor A., Fedyanin, Dmitry Yu.
openaire   +2 more sources

Bright Single-Photon Emitting Diodes Based on the Silicon-Vacancy Center in AlN/Diamond Heterostructures

open access: yesNanomaterials, 2020
Practical implementation of many quantum information and sensing technologies relies on the ability to efficiently generate and manipulate single-photon photons under ambient conditions. Color centers in diamond, such as the silicon-vacancy (SiV) center,
Igor A. Khramtsov, Dmitry Yu. Fedyanin
doaj   +1 more source

Ultrabright single-photon source on diamond with electrical pumping at room and high temperatures

open access: yesNew Journal of Physics, 2016
The recently demonstrated electroluminescence of color centers in diamond makes them one of the best candidates for room temperature single-photon sources.
D Yu Fedyanin, M Agio
doaj   +1 more source

Input-output theory of cavities in the ultra-strong coupling regime: the case of a time-independent vacuum Rabi frequency [PDF]

open access: yes, 2006
We present a full quantum theory for the dissipative dynamics of an optical cavity in the ultra-strong light-matter coupling regime, in which the vacuum Rabi frequency is comparable to the electronic transition frequency and the anti-resonant terms of ...
Carusotto, Iacopo, Ciuti, Cristiano
core   +3 more sources

Efficient photovoltaic and electroluminescent perovskite devices [PDF]

open access: yes, 2015
Planar diode structures employing hybrid organic-inorganic methylammonium lead iodide perovskites lead to multifunctional devices exhibiting both a high photovoltaic efficiency and good electroluminescence.
Bolink, Henk J.   +6 more
core   +1 more source

Single charge and exciton dynamics probed by molecular-scale-induced electroluminescence

open access: yes, 2018
Excitons and their constituent charge carriers play the central role in electroluminescence mechanisms determining the ultimate performance of organic optoelectronic devices.
Etzkorn, Markus   +7 more
core   +2 more sources

1.55 μm direct bandgap electroluminescence from strained n-Ge quantum wells grown on Si substrates [PDF]

open access: yes, 2012
Electroluminescence from strained n-Ge quantum well light emitting diodes grown on a silicon substrate are demonstrated at room temperature. Electroluminescence characterisation demonstrates two peaks around 1.55 μm and 1.8 μm, which correspond to ...
Cecchi, S.   +6 more
core   +1 more source

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