Results 91 to 100 of about 83,574 (291)

In Silico Modeling of Indigo and Tyrian Purple Single-Electron Nano-Transistors Using Density Functional Theory Approach

Nanoscale Research Letters, 2017
The purpose of this study was to develop and implement an in silico model of indigoid-based single-electron transistor (SET) nanodevices, which consist of indigoid molecules from natural dye weakly coupled to gold electrodes that function in a Coulomb ...
Sergey Shityakov, Norbert Roewer, Carola Förster, Jens-Albert Broscheit   +3 more
doaj   +1 more source

Conductive Bonding and System Architectures for High‐Performance Flexible Electronics

Advanced Functional Materials, EarlyView.
This review outlines bonding technologies and structural design strategies that support high‐performance flexible and stretchable electronics. Bonding approaches such as surface‐activated bonding and anisotropic conductive films, together with system‐level architectures including buffer layers and island‐bridge structures, possess distinct mechanical ...
Kazuma Nakajima, Kenjiro Fukuda
wiley   +1 more source

Probing the power of an electronic Maxwell Demon

, 2011
We suggest that a single-electron transistor continuously monitored by a quantum point contact may function as a Maxwell demon when closed-loop feedback operations are applied as time-dependent modifications of the tunneling rates across its junctions ...
Brandes, Tobias, Emary, Clive, Kiesslich, Gerold, Schaller, Gernot   +3 more
core   +1 more source

Electric Field‐Dependent Conductivity as Probe for Charge Carrier Delocalization and Morphology in Organic Semiconductors

Advanced Functional Materials, EarlyView.
Applying a high electric field to a doped organic semiconductor heats up the charge carrier distribution beyond the lattice temperature, enhancing conductivity. It is shown that the associated effective temperature can be used to extract the effective localization length, which is a characteristic length scale of charge transport and provides ...
Morteza Shokrani, Felix Maximilian Graf, Anton Kompatscher, Dennis Derewjanko, Martijn Kemerink   +4 more
wiley   +1 more source

Single Event Transient Study of pMOS Transistors in 65 nm Technology With and Without a Deep n+ Well Under Particle Striking

IEEE Access, 2019
In triple-well PMOSFET transistor, a deep n+ well (DNW) is a process used to isolate the substrate noise, which can lead to changes in effect of single event transient (SET). In outer space, collision of cosmic energetic particles with sensitive nodes of
Jizuo Zhang, Liang Fang, Jianjun Chen, Shen Hou, Xianyu Tong   +4 more
doaj   +1 more source

Carbon nanotube single-electron devices at audio and radio frequencies [PDF]

, 2004
A single-electron transistor is the most sensitive charge detector known today. It is formed by a small piece of a conductor coupled to electrodes by tunnel junctions. At low frequencies, the charge sensitivity is limited by the 1/f-noise.
Roschier, Leif
core  

Laser-like Instabilities in Quantum Nano-electromechanical Systems

, 2006
We discuss negative damping regimes in quantum nano-electromechanical systems formed by coupling a mechanical oscillator to a single-electron transistor (normal or superconducting).
A. A. Clerk, M. I. Dykman, M. Lax, S. D. Bennett   +3 more
core   +1 more source

Temperature‐Induced Nonvolatile Switching through Thermal Hysteresis in a Gd3Fe5O12/Ho3Fe5O12 Exchange‐Coupled Rare‐Earth Iron Garnet Bilayer

Advanced Functional Materials, EarlyView.
Reducing power consumption in spintronic memory remains a major challenge due to the need for high current densities. A bilayer of gadolinium and holmium iron garnets enables purely temperature‐induced, nonvolatile magnetic switching with bistable states within a ±25 K range. This approach achieves up to 66‐fold lower energy use than current spin–orbit
Junseok Kim, Phuoc Cao Van, Jong‐Ryul Jeong, Hyungyu Jin   +3 more
wiley   +1 more source

Singularity-matching peaks in superconducting single-electron transistor

, 1997
We report the experimental observation of the recently predicted peaks on the I-V curve of the superconducting single-electron transistor at relatively high temperatures.
Chen, C. D., Korotkov, A. N., Nakamura, Y., Tsai, J. S.   +3 more
core   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source