Results 141 to 150 of about 11,423 (258)

In Situ Integrated Titanium Oxide Synaptic Phototransistor Enabling Multimodal Plasticity and Noise‐Robust Selective Attention

Advanced Materials Technologies, EarlyView.
An in situ integrated TiO2/SiOx/Al2O3 synaptic phototransistor couples ultraviolet and electrical stimuli within a scalable, CMOS‐compatible oxide stack. Multimodal plasticity, spike‐timing‐dependent learning, and bee‐inspired associative conditioning are achieved through trap‐mediated temporal dynamics.
Youngbin Yoon, Jaehee Lee, Jeongwook Kwon, Yongki Kim, Myunghun Shin, Jung Wook Lim   +5 more
wiley   +1 more source

Conformable Ferrimagnetic Tattoo Electrodes for Plant Electrophysiology

Advanced Materials Technologies, EarlyView.
The newly developed ferrimagnetic tattoo electrode is capable of measuring plant electrophysiological activity outside the Faraday cage. Its ability to adhere without damaging the plant tissue allows long‐term recordings. This premise opens new avenues for in‐field monitoring of plant health through electrophysiology.
Arianna Melis, Andrea Spanu, Fabrizio Antonio Viola, Abdul Manan Dar, Alexandra Sandéhn, Cyril Routier, Annalisa Bonfiglio, Eleni Stavrinidou   +7 more
wiley   +1 more source

Nature‐Derived Chitosan Biopolymer: A Promising Candidate for Sustainable Electronics

Advanced Materials Technologies, EarlyView.
In the creation of environmentally friendly devices, nature‐derived chitosan biopolymer is a promising contender for sustainable electronic research. It can be utilized to create more ecologically friendly scalable gadgets and has a variety of uses in different active layers of electronics.
Joshua McDonald, Ali Nawaz, Amandeep Singh, Prashant Sonar   +3 more
wiley   +1 more source

Unveiling the Hidden Geometry of OECTs: Contact‐Semiconductor Overlap Driven Errors in Volumetric Capacitance

Advanced Materials Technologies, EarlyView.
This work examines how contact–semiconductor overlap influences volumetric capacitance extraction in organic electrochemical transistors as device dimensions shrink. It shows that neglecting overlap leads to systematic, geometry‐driven errors in capacitance values.
Renan Colucci, Marcos Luginieski, Germán D. Gómez Higuita, Gerwin Dijk, Bianca de A. Feitosa, Yaakov Tuchman, Alberto Salleo, Gregório Couto Faria   +7 more
wiley   +1 more source

Ultrathin and Flexible Organic Light‐Addressable Potentiometric Sensors

Advanced Materials Technologies, EarlyView.
The first ultrathin, fully organic, and flexible light‐addressable potentiometric sensor (LAPS) is demonstrated. With a thickness of only 2.3–2.9 µm, this standalone film offers sensitivity to electrolyte potential and stable performance for over 170 days.
Ami Ichikawa, Yudai Hemmi, Yuanyuan Guo, Georgios Bairaktaris, Carl Frederik Werner, Tomohiko Murayama, Hiroyuki Matsui   +6 more
wiley   +1 more source

Unlocking the performance limits of 2T0C DRAM with Ω-shaped-gated single-crystal In₂O₃ FETs. [PDF]

Sci Adv
Zuo S, Xie Z, Zhao X, Tang L, Zhao Y, Zeng Y, Niu W, Liu S, Li Q, Yang G, Li L, Wei Z, Ye C, Zou X, Liu X, Liao L, He P.   +16 more
europepmc   +1 more source

Printed SWCNT‐Based p–n Junction Thin‐Film Near‐Infrared Photoresistors Enabled by a Sustainable Furan‐Derived π‐Conjugated Polymer

Advanced Materials Technologies, EarlyView.
A sustainable polymer–carbon nanotube bilayer enables efficient near‐infrared photodetection in a simple lateral planar p–n junction thin‐film architecture. Thermal side‐chain cleavage enhances interfacial coupling, shifts the dominant photoresponse from 800 to 1000 nm, and substantially improves device performance.
Jenner H. L. Ngai, Zhao Li, Jianfu Ding, Yuning Li   +3 more
wiley   +1 more source

O Radical‐Induced n‐to‐p Transition in PbS Quantum Dots Enabling Enhanced and Stable Photogating in QD/IGZO SWIR Phototransistors

Advanced Materials Technologies, EarlyView.
An O radical‐induced n‐to‐p transition in PbS quantum dots (QDs) is achieved via atmospheric Ar/O2 treatment, enabling favorable band alignment and stable photogating in PbS QD/IGZO phototransistors. Interfacial defect passivation and Fermi‐level modulation, confirmed by XPS and UPS analyses, effectively suppress dark current, induce a positive VTH ...
MD Redowan Mahmud Arnob, Solbee Lee, Hansol Jeong, Sabiqun Nahar, Jin Jang   +4 more
wiley   +1 more source

Oxide interface-based polymorphic electronic devices for neuromorphic computing. [PDF]

Nat Commun
Pradhan S, Miller K, Hartmann F, Spring M, Gabel J, Leikert B, Kuhn S, Kamp M, Lopez-Richard V, Sing M, Claessen R, Höfling S.   +11 more
europepmc   +1 more source

An On‐Demand Neuromorphic Vision System Enabled by a Multi‐Paradigm Neuromorphic Device and Hierarchical Reconfigurability Designed from Device to System Level

Advanced Science, EarlyView.
An on‐demand ultra‐reconfigurable intelligent vision system with hierarchical reconfigurability from device to system levels is demonstrated. Through co‐design of a multi‐paradigm device, reconfigurable circuits, and adaptive system architecture/algorithms, the system enables seamless switching among spiking, non‐spiking, neuromorphic imaging (NI), and
Biyi Jiang, Jiayi Xu, Liang Ran, Xinhe Feng, Khalil Harrabi, Yida Li, Longyang Lin, Feichi Zhou   +7 more
wiley   +1 more source