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Resonant tunneling single electron transistors
Superlattices and Microstructures, 1995We use a modulation-doped double barrier heterostructure to fabricate a resonant tunneling single electron transistor. Irregular Coulomb blockade oscillations are observed when the gate voltage is swept to vary one-by-one the number of electrons in the dot close to 'pinch-off'.
S. Tarucha, D.G. Austing, T. Honda
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Progress on single-electron transistors
2010 IEEE International Conference on Integrated Circuit Design and Technology, 2010Large scale production of single-electron transistors (SETs) is now possible with a standard fully-depleted SOI process. Although the operating temperature is limited to approximately 10 K for now, this opens new opportunities for implementing on-chip hybrid designs combining the benefits of Coulomb blockade with regular FET-based electronics. Moreover,
Jehl X., Sanquer M.
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2015
The first single electron transistor (SET), made of small tunnel junctions, was realized in the Bell Laboratories in 1987 by Fulton and Dolan [1]. Since then, the fabrication of SETs became more and more sophisticated and allowed for operation at room temperature [2] or as sensors for electron spin detection [3].
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The first single electron transistor (SET), made of small tunnel junctions, was realized in the Bell Laboratories in 1987 by Fulton and Dolan [1]. Since then, the fabrication of SETs became more and more sophisticated and allowed for operation at room temperature [2] or as sensors for electron spin detection [3].
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Single-Electron Transistor (SET)
2004One of the most exciting challenges of microelectronics is, of course, the vision of a switching device that can control single electrons. The idea of the single-electron transistor is based on the so-called Coulomb blockade. This effect only appears within very small device dimensions and is due to the quantization of charge [61].
Karl Goser +2 more
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An SOI single-electron transistor
1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345), 2003Single-electron transistors (SETs) are currently being investigated by many research groups as possible devices for ultra-high-density, low-power information processing or storage systems. A single-electron transistor consists of two tunnel junctions (TJ) connected to the source and the drain, a center floating node and a capacitance connected to the ...
null Xiaohui Tang +4 more
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Molecule-based single electron transistor
Physica E: Low-dimensional Systems and Nanostructures, 2003Abstract Molecule-based electronic devices, utilizing self-assembled monolayer of chemically synthesized organic molecules and Au nanoparticle, were fabricated and their electrical transport properties were investigated. The current–voltage characteristics of the sample was nonlinear at temperatures below 70 K and the gate modulation curve ...
Hye-Mi So +7 more
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2015
In this thesis, the realization of new single electron transistor based circuits and the simulation of their operation is presented. The main tool used towards this aim is the SECSSimulator (SingleElectronCircuitSimulator).A detailed description of the physics behind single electron transistors and of the simulation methods is provided in the first ...
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In this thesis, the realization of new single electron transistor based circuits and the simulation of their operation is presented. The main tool used towards this aim is the SECSSimulator (SingleElectronCircuitSimulator).A detailed description of the physics behind single electron transistors and of the simulation methods is provided in the first ...
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Broadband single-electron tunneling transistor
Applied Physics Letters, 1996A single-electron tunneling transistor has been directly coupled on-chip to a high electron mobility transistor. The high electron mobility transistor (HEMT) is used as an impedance matching circuit with a gain close to unity. The HEMT transformed the 1.4 MΩ output impedance of the single electron tunneling (SET) transistor by two orders of magnitude ...
E. H. Visscher +5 more
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Beyond CMOS: single-electron transistors
2002 IEEE International Conference on Industrial Technology, 2002. IEEE ICIT '02., 2003Current microelectronics technology relies on continued shrinkage of transistor features. At a certain point in the miniaturization drive, conventional transistors will behave differently with different current conduction mechanisms. This paper sheds a light on how electrical conduction takes place in a nanoscale transistor.
S. Kanjanachuchai, S. Panyakeow
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Nanoscaled ferromagnetic single-electron transistors
2007 7th IEEE Conference on Nanotechnology (IEEE NANO), 2007We report on a summary of fabricating and characterizing nanoscaled ferromagnetic single-electron transistors (F-SETs). One type of device is assembled with an atomic force microscope. A single 30 nm Au disc, forming the central island of the transistor, is manipulated with Angstrom precision into the gap between plasma oxidized Ni source and drain ...
R. S. Liu +5 more
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