Radiation Hardness Study of Single-Photon Avalanche Diode for Space and High Energy Physics Applications [PDF]
Sensors, 2022 Pouyan Keshavarzian +2 more
exaly +2 more sources
Modeling and Analysis of Capacitive Relaxation Quenching in a Single Photon Avalanche Diode (SPAD) Applied to a CMOS Image Sensor [PDF]
Sensors, 2020 Akito Inoue
exaly +2 more sources
Advances in near-infrared avalanche diode single-photon detectors
Chip, 2022 Avalanche-photodiode-based near-infrared single-photon detectors have seen rapid development in the last two decades because of their enormous internal gain, high sensitivity, fast response, small volume, and ease of integration.
Chen Liu, Hai-Feng Ye, Yan-Li Shi
doaj +1 more source
Single-Photon Avalanche Diode with Enhanced NIR-Sensitivity for Automotive LIDAR Systems [PDF]
Sensors, 2016 Mineki Soga
exaly +2 more sources
Fully-Integrated Dickson Converters for Single Photon Avalanche Diode Arrays
IEEE Access, 2021 This article presents a novel low EMI technique to regulate the output voltage of fully-integrated switched capacitor Dickson type step-up DC/DC converters for SPAD arrays implemented in the Silterra 0.13 μm HV-CMOS process.
Simon Kennedy +4 more
doaj +1 more source
Sensors, 2021 An ultrafast Active Quenching—Active Reset (AQAR) circuit is presented for the afterpulsing reduction in a Single Photon Avalanche Diode (SPAD). The proposed circuit is designed in a 28 nm Fully Depleted Silicon On Insulator (FD-SOI) CMOS technology.
Mohammadreza Dolatpoor Lakeh +8 more
doaj +1 more source
A novel full-chip afterpulsing evaluation technique for 116 × 160 Ge-on-Si SPAD array [PDF]
APL PhotonicsThis Letter presents a novel on-chip afterpulsing characterization method demonstrated using gated-mode short-wave infrared single photon avalanche diode arrays, effectively overcoming the measurement limitations of conventional methods.
Chi-En Chen +9 more
doaj +1 more source
Accurate model for single-photon avalanche diodes
IET Circuits, Devices & Systems, 2008 An accurate model useful for simulating single-photon avalanche diodes including biasing circuits is presented. The authors developed the model using Verilog-A codes to describe both static and dynamic behaviours. The derived model fits experimental results extracted from practical devices better than the one used in the open literature.
R. MITA, PALUMBO, Gaetano, G. FALLICA
openaire +2 more sources
A 130-nm CMOS single-photon avalanche diode [PDF]
SPIE Proceedings, 2007 The first implementation of a single photon avalanche diode (SPAD) is reported in 130nm CMOS technology. The SPAD is fabricated as p+/nwell junction with octagonal shape. Premature edge breakdown is prevented through a guard ring of p-well around the p+ anode.
Niclass, Cristiano +4 more
openaire +2 more sources
Current-Assisted SPAD with Improved p-n Junction and Enhanced NIR Performance
Sensors, 2020 Single-photon avalanche diodes (SPADs) fabricated in conventional CMOS processes typically have limited near infra-red (NIR) sensitivity. This is the consequence of isolating the SPADs in a lowly-doped deep N-type well.
Gobinath Jegannathan +2 more
doaj +1 more source