Results 161 to 170 of about 5,224,047 (250)

Al1−xHfxN$\text{Al$_{1-x}$Hf$_{x}$N}$ Thin Films with Enhanced Piezoelectric Responses for GHz Surface Acoustic Wave Devices

open access: yesAdvanced Electronic Materials, EarlyView.
Reactively sputtered wurtzite Al1‐xHfxN thin films, exhibiting strong c‐axis texture and enhanced piezoelectric response, are demonstrated as a cost‐effective alternative to Al1‐xScxN. X‐ray absorption spectroscopy reveals that cross‐gap N 2p–Hf 5d hybridization increases the Born effective charge and enables a multifold increase in piezoelectric ...
Laura I. Wagner   +14 more
wiley   +1 more source

Miniscrew-Supported Palatal Expansion in Adults: A Clinical Case Report. [PDF]

open access: yesCase Rep Dent
Miranda-Astocondor E   +4 more
europepmc   +1 more source

Cost‐Effective Ti/Al/Ni Multilayer Neural Probes With In Vivo Recording Performance Comparable to Ti/Au Neural Probes

open access: yesAdvanced Electronic Materials, EarlyView.
In this study, we developed a cost‐efficient neural probe by replacing traditional gold with an aluminum‐based Ti/Al/Ni multilayer stack. Optimizing this metal architecture suppressed oxidation and ensured robust electrical stability, achieving signal quality comparable to standard gold probes. It enables a highly accessible and economical solution for
Sehwan Park   +6 more
wiley   +1 more source

Oxygen‐Scavenging‐Driven Interlayer Engineering for Balancing Linearity and Retention in IGZO Synaptic Memristors

open access: yesAdvanced Electronic Materials, EarlyView.
Oxygen‐scavenging‐induced self‐formed interlayers regulate Schottky‐barrier modulation in IGZO memristors, producing a fundamental trade‐off between synaptic update linearity and retention. A preserved AlOx interlayer moderates voltage distribution and enables gradual, nearly linear conductance updates, whereas a soft‐broken SiO2 interlayer provides a ...
Jae Woo Lee   +11 more
wiley   +1 more source

Predictable and Scalable Analog Matrix–Vector Multiplication in Memristor Crossbars via Closed‐Form Wire‐Resistance Compensation

open access: yesAdvanced Electronic Materials, EarlyView.
Wire resistance and sneak paths severely compromise the performance of large memristor crossbars. A predictive closed‐form distributed line‐resistance model, combined with a fourmatrix geometry‐averaging algorithm, eliminates these parasitic limitations.
Davide Rossetti   +5 more
wiley   +1 more source

Stable Magnetic Nanodomains Engineered Via Ga+‐ion Irradiation For Deterministic Sequential Switching

open access: yesAdvanced Electronic Materials, EarlyView.
Tiny magnetic regions separated by domain walls can store data, but controlling them precisely is difficult. We use focused ion beams to create nanoscale “anisotropy wells” that pin these walls from both sides. This bidirectional pinning holds domains stable in either direction, even with no field applied.
Gijs W.A. Simons   +2 more
wiley   +1 more source

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