Results 211 to 220 of about 101,875 (254)
Some of the next articles are maybe not open access.

Photoluminescence from (Si/SiO2)n superlattices and their use as emitters in [SiO2/Si]n SiO2 [Si/SiO2]m microcavities

Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy, 2001
Si/SiO2 superlattices are recently under investigation to add optical functionality to silicon based microelectronics. In such superlattices quantum-confinement should drive Si to become a good light emitter. Emission properties can be further improved and controlled by placing the emitter in optical microcavities. In this paper emission properties of (
G. Pucker, P. Bellutti, Pavesi, Lorenzo
openaire   +3 more sources

Thermodynamic optimization of the systems PbO-SiO2, PbO-ZnO, ZnO-SiO2 and PbO-ZnO-SiO2

Metallurgical and Materials Transactions B, 1997
Liquidus-phase equilibrium data of the present authors for the PbO-ZnO-SiO system, combined with phase equilibrium and thermodynamic data from the literature, were optimized to obtain a selfconsistent set of parameters of thermodynamic models for all phases. The modified quasichemical model was used for the liquid slag phase.
Jak, Evgueni   +4 more
openaire   +4 more sources

Studies of SiO2 and SiSiO2 interfaces by XPS

Surface Science, 1979
Abstract The method to determine thickness distribution in thin films by X-ray photoelectron spectroscopy (XPS) has been modified for the determination of the thickness distribution of thermally grown silicon oxide films and the thickness of the SiSiO2 interfacial transition layer.
Takeo Hattori, Tatsushi Nishina
openaire   +1 more source

Atomic structure of SiO2 at SiO2/Si interfaces

Applied Surface Science, 2000
The valence-band and O 2s core-level spectra of ultrathin (about I nm) SiO 2 layers formed in the initial stages of the oxidation of Si(100) substrates were measured by high-resolution X-ray photoelectron spectroscopy (XPS), and the energy difference between the bonding states in the valence-band and the core-level was found to be larger than the ...
K. Hirose   +3 more
openaire   +1 more source

Room temperature SiO2∕SiO2 covalent bonding

Applied Physics Letters, 2006
Room temperature covalent bonds between bonded silicon oxide layers can be realized by forming surface and subsurface absorption layers followed by terminating outmost bonding surfaces with desired bonding groups prior to bonding. For example, by introducing fluorine into bonding oxide layers and NH2 groups onto surfaces of bonding oxide layers before ...
Q.-Y. Tong, G. Fountain, P. Enquist
openaire   +1 more source

Methanation of CO in transient states over Ru/SiO2, Ni/SiO2 and Pt/SiO2

Reaction Kinetics & Catalysis Letters, 1993
In CO methanation, the hydrogenation of surface carbon species are inhibited by reversibly adsorbed CO. The extent of inhibition is markedly different on the methals used.
Shin-ichiro Fujita   +2 more
openaire   +1 more source

Nitrogen solubility in CaO-SiO2, CaO-MgO-SiO2, and BaO-MgO-SiO2 melts

Metallurgical Transactions B, 1990
Nitrogen solubility in molten CaO-SiO2, CaO-MgO-SiO2, and BaO-MgO-SiO2 silicate systems was measured as functions of nitrogen and oxygen partial pressures and composition at 1823 K. Experimental findings indicate that nitrogen exists as a free nitride ion or is associated with silicate networks, depending principally on the slag composition.
Martinez R. Eloy, Nobuo Sano
openaire   +1 more source

Differential Enthalpies of Solution of Components in Binary Systems 2 CaO . Al2O3 . SiO2-CaO . Al2O3 . 2 SiO2, CaO . SiO2-CaO . Al2O3 . 2 SiO2 and CaO . SiO2-2 CaO . Al2O3 . SiO2

Collection of Czechoslovak Chemical Communications, 1993
Differential enthalpies of solution of components in binary systems 2 CaO . Al2O3 . SiO2-CaO . Al2O3 . 2 SiO2, CaO . SiO2-CaO . Al2O3 . 2 SiO2 and CaO . SiO2-2 CaO . Al2O3 . SiO2 as the function of composition and temperature were determined on the base of isothermal composition dependences of enthalpies of mixing and temperature dependences of heats ...
Ladislav Kosa   +4 more
openaire   +1 more source

Charge Trapping in SiO2

AIP Conference Proceedings, 1984
Avalanche injection techniques are extensively used to inject electrons and holes from silicon into the thin SiO2 layer of the type used in MOS transistors. This makes it possible to evaluate the electron and hole trapping kinetics in this material using only simple MOS devices.
openaire   +1 more source

Molecular dynamics simulation of binary CaO–FeO, MgO–SiO2, FeO–SiO2, CaO–SiO2 and ternary CaO–FeO–SiO2 systems

Thermochimica Acta, 2001
Abstract Molecular dynamics models of binary CaO–FeO, MgO–SiO 2 , FeO–SiO 2 , CaO–SiO 2 and ternary CaO–FeO–SiO 2 systems were constructed at 1873 K using the Born–Mayer pair potentials. The potentials included the effective dipole–dipole interactions for Ca–Fe, Mg–Si, Fe–Si and Ca–Si pairs.
D.K Belashchenko   +2 more
openaire   +1 more source

Home - About - Disclaimer - Privacy