Results 271 to 280 of about 205,983 (305)
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Thermochimica Acta, 2001
Abstract Molecular dynamics models of binary CaO–FeO, MgO–SiO 2 , FeO–SiO 2 , CaO–SiO 2 and ternary CaO–FeO–SiO 2 systems were constructed at 1873 K using the Born–Mayer pair potentials. The potentials included the effective dipole–dipole interactions for Ca–Fe, Mg–Si, Fe–Si and Ca–Si pairs.
D.K Belashchenko +2 more
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Abstract Molecular dynamics models of binary CaO–FeO, MgO–SiO 2 , FeO–SiO 2 , CaO–SiO 2 and ternary CaO–FeO–SiO 2 systems were constructed at 1873 K using the Born–Mayer pair potentials. The potentials included the effective dipole–dipole interactions for Ca–Fe, Mg–Si, Fe–Si and Ca–Si pairs.
D.K Belashchenko +2 more
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Raman spectra and structure of BaOSiO2 SrOSiO2 and CaOSiO2 melts to 1600°C
Chemical Geology, 1995Abstract Raman spectra were collected for barium silicate, strontium silicate and calcium silicate melts at temperatures ranging from the glass transition region to temperatures as high as 1600°C. For melts less polymerized than disilicate, the spectra were used to determine the relative abundances of the Q3, Q2 and Q1 tetrahedra and the Si2O52 ...
John D. Frantza, Bjorn O. Mysen
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Rheological behaviour of solutions affording SiO2 and SiO2/ZrO2 fibers
Journal of Non-Crystalline Solids, 1991Abstract The rheological behaviour of solutions composed of silicon ethoxide (TEOS) or of TEOS and zirconium propoxide (TPOZ) in various ratios are studied as a function of hydrolysis conditions, concentration of acetylacetone, addition of dimethyldiethoxysilane (DEDMS) and nature of solvent.
Carturan, Giovanni +2 more
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AIP Conference Proceedings, 1984
Avalanche injection techniques are extensively used to inject electrons and holes from silicon into the thin SiO2 layer of the type used in MOS transistors. This makes it possible to evaluate the electron and hole trapping kinetics in this material using only simple MOS devices.
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Avalanche injection techniques are extensively used to inject electrons and holes from silicon into the thin SiO2 layer of the type used in MOS transistors. This makes it possible to evaluate the electron and hole trapping kinetics in this material using only simple MOS devices.
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TDDB Measurements of SiO2 Gate and SiO2/Si3N4/SiO2 Gate Structure
Extended Abstracts of the 1985 International Conference on Solid State Devices and Materials, 1985J. Mitsuhashi +4 more
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Multifunctional SiC@SiO2 Nanofiber Aerogel with Ultrabroadband Electromagnetic Wave Absorption
Nano-Micro Letters, 2022Limeng Song, Yongqiang Chen, Li Guan
exaly
Hydrogen chemisorption and mobility on Ru/SiO2, K/Ru/SiO2 and Ru-Ag/SiO2
1996Abstract Microcalorimetry and 1 H NMR have been used to investigate hydrogen chemisorption on Ru/SiO 2 , K/Ru/S1O 2 and Ru-Ag/SiO 2 . Adding small amounts of K or Ag to Ru/SiO 2 significantly reduces the amounts of hydrogen adsorbed and eliminates intermediate (~50 kJ/mole) as well as weakly bound states ( 2 .
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Bioinspired mechanically interlocking holey graphene@SiO2 anode
Interdisciplinary Materials, 2022Xiaobin Liao, Yan Zhao, Jian Mao
exaly

