Results 221 to 230 of about 17,306,746 (301)

Engineering Local Polar Frustration in Lead‐Free Dielectric Ceramics for Ultrahigh Normalized Energy Storage Performance

open access: yesAdvanced Functional Materials, EarlyView.
Local polar frustration is engineered to stabilize an ergodic relaxer through nanoscale multiphase coexistence, suppressing long‐range ferroelectric order while preserving high polarization. This strategy delivers ultrahigh low‐field normalized energy density (Wa >0.020 mC cm−2), exceptional thermal stability, and a transferable design principle for ...
Hareem Zubairi   +9 more
wiley   +1 more source

Freeze‐Thaw Engineered Dual Conductivity Polymeric Binder Stabilizes Large‐Volume‐Change Lithium–Ion Battery Anodes

open access: yesAdvanced Functional Materials, EarlyView.
This work developed an all‐aqueous freeze‐thaw strategy to create a dual‐conductive PVA/P3KBT binder for high volume‐change lithium–ion battery anodes. The resulting binder system strengthens the electrode structure, supports ion and electron transport, and accommodates repeated volume changes, reducing cracking and improving long‐term cycling ...
Haoze Ren   +17 more
wiley   +1 more source

Earth's east-west albedo symmetry. [PDF]

open access: yesNature
Zhang J, Gristey JJ, Feingold G.
europepmc   +1 more source

Multi‐Level Saturation Current Encoding in Two‐Dimensional Ferroelectric Source‐Gated Transistors

open access: yesAdvanced Functional Materials, EarlyView.
A 2D ferroelectric source‐gated transistor (SGT) operates with a non‐volatile, multi‐level saturation current controlled by ferroelectric polarization. Operando electrostatic and photocurrent imaging link the current limitation to source‐side depletion, identifying saturation current as a programmable, read‐bias‐tolerant device parameter toward low ...
Joon‐Seok Kim   +3 more
wiley   +1 more source

Unified Phase‐Field Framework for Antiferroelectric, Ferroelectric and Dielectric Phases: Application to HZO Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
HfxZr1−xO2${\rm Hf}_x{\rm Zr}_{1-x}{\rm O}_2$ offers CMOS‐compatible nanoscale ferroelectricity yet suffers from a high Ec${\rm E}_c$ demanding large operating voltages. A unified phase‐field framework spanning AFE/FE/DE phases shows how FE grains soften neighboring AFE grains over λ$\lambda$ ≈$\approx$ 22–37 nm.
P. Pankaj   +4 more
wiley   +1 more source

Oxygen‐Vacancy‐Regulated Crystallization and Ferroelectric Phase Stabilization in Hf0.5Zr0.5O2 Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
Temperature‐resolved in situ grazing‐incidence wide‐angle X‐ray scattering reveals that oxygen vacancies actively regulate crystallization in Hf0.5Zr0.5O2 thin films. By decoupling macroscopic strain from intrinsic phase evolution, a vacancy‐lean environment significantly lowers the activation energy barrier for crystallization.
Hyun Woo Jeong   +9 more
wiley   +1 more source

Ligand-Controlled Valley and Spin Properties in Ni-Based Two-Dimensional Metal-Organic Frameworks. [PDF]

open access: yesJ Phys Chem C Nanomater Interfaces
Falsafi N   +3 more
europepmc   +1 more source

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