Results 151 to 160 of about 67,270 (298)

An upper bound for the Z-spectral radius of adjacency tensors. [PDF]

J Inequal Appl, 2018
Wu ZY, He J, Liu YM, Tian JK.
europepmc   +1 more source

Synergistic Solar Interfacial Evaporation and Photocatalysis Enabled by a Hierarchical Porous Hydrogel Reactor

Advanced Functional Materials, EarlyView.
A tree‐inspired hydrogel interfacial reactor couples solar evaporation with photocatalysis for simultaneous desalination and waste water treatment. The bilayer design achieves 2.14 kg·m−2·h−1 evaporation rate with 79% dye degradation under one sun, demonstrating that photothermal heating and evaporation induced pollutant enrichment create a self ...
Yan Zhao, Xiaolong Ma, Zihong Wu, Muhammad Amjad, Dongsheng Wen   +4 more
wiley   +1 more source

A new bound for the spectral radius of nonnegative tensors. [PDF]

J Inequal Appl, 2017
Li S, Li C, Li Y.
europepmc   +1 more source

A Material‐Agnostic Strategy for Uniform Patterning of Conjugated Polymers Unveils the True Role of Porosity in Organic Electrochemical Transistors

Advanced Functional Materials, EarlyView.
A generalizable strategy for fabricating regular porous, chemically intact conjugated polymer channels reveals how porosity benefits organic electrochemical transistors. Composition‐dependent performance enhancement is linked to charge carrier mobility, volumetric capacitance, and effective doped volume.
Geon Gug Yang, Camille E. Cunin, Rebecca F. Meacham, Sang Ouk Kim, Aristide Gumyusenge   +4 more
wiley   +1 more source

A novel model for protein sequence similarity analysis based on spectral radius. [PDF]

J Theor Biol, 2018
Wu C, Gao R, De Marinis Y, Zhang Y.
europepmc   +1 more source

Extraordinary n‐type Tellurium‐Free Thermoelectric Performance of Y‐Doped BiSe via Synergistic Effect of Vacancies and Band Engineering

Advanced Functional Materials, EarlyView.
Yttrium doping in Sb‐alloyed BiSe synergistically induces Bi vacancies and flattens conduction bands, simultaneously slashing lattice thermal conductivity by 50% and boosting the power factor. The optimized n‐type Bi0.64Sb0.3Y0.06Se delivers a peak zT of 0.91 at 393 K (average zT 0.76, 300–523 K) and an 8‐pair module with 4.6% conversion efficiency ...
Wenhao Xie, Fang Lyu, Xiaolong Sun, Chang Li, Xiaolu Zhu, Liangwei Hu, Qianfeng Ding, Wenjie Zhou, Muyang Huang, Yineng Gou, Yi Zhao, Han Tang, Wei Cao, Yue Hou, Yun Zheng, Ady Suwardi, Ziyu Wang   +16 more
wiley   +1 more source

Bounds for the M-spectral radius of a fourth-order partially symmetric tensor. [PDF]

J Inequal Appl, 2018
Li S, Li Y.
europepmc   +1 more source

Direct Channel Implantation of B and BF2 Ions for Functional Control of Oxygen Vacancies in Oxide Semiconductor Thin Film Transistors

Advanced Functional Materials, EarlyView.
Direct channel implantation of B and BF2 ions was employed to fabricate amorphous IGZO TFTs with improved electrical and stability properties. B and BF2 implantation modulate oxygen vacancies within the IGZO channel. The field‐effect mobility of ion‐implanted IGZO TFTs was enhanced as compared to pristine IGZO TFTs.
Beom Soo Kim, Jong Bin An, Seok Gyu Hong, Moon Ho Lee, Ju Hyun Lee, Ji Yeong Park, Hwa Seon Kim, I. Sak Lee, Kyungmoon Kwak, Hyun Jae Kim   +9 more
wiley   +1 more source

Bounds for the Z-spectral radius of nonnegative tensors. [PDF]

Springerplus, 2016
He J, Liu YM, Ke H, Tian JK, Li X.
europepmc   +1 more source

Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition

Advanced Functional Materials, EarlyView.
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen, Susanne Selle, Michael S. Bar, Michael Lorenz, Holger von Wenckstern, Marius Grundmann   +5 more
wiley   +1 more source