Results 51 to 60 of about 891,389 (246)

Proximity‐Tuned Magnetic and Transport Anomalies in All‐Epitaxial Fe5−xGeTe2/WSe2 Van der Waals Heterostructures

open access: yesAdvanced Functional Materials, EarlyView.
All‐epitaxial and scalable ferromagnetic/non‐magnetic Fe5−xGeTe2/WSe2 van der Waals (vdW) heterostructures exhibiting room‐temperature magnetism and perpendicular magnetic anisotropy (PMA) are realized. The system displays proximity‐tuned magnetic anisotropy, thickness‐dependent unconventional Hall effects, and temperature‐dependent sign reversal of ...
Hua Lv   +15 more
wiley   +1 more source

Dependence of current-induced switching threshold on composition gradient width in Si/Al-integrated perpendicular magnetic films [PDF]

open access: yesAIP Advances
We report spin–orbit torque switching in perpendicularly magnetized Pt(3.1 nm)/Co(0.95 nm)/Pt(3.1 nm) trilayer using Si/Al composition-graded materials (CGMs).
Sayuri Takagi   +2 more
doaj   +1 more source

Spin orbit torque non-volatile flip-flop for high speed and low energy applications

open access: yes, 2014
International audienceA novel nonvolatile flip-flop based on spin-orbit torque magnetic tunnel junctions (SOT-MTJs) is proposed for fast and ultralow energy applications. A case study of this nonvolatile flip-flop is considered.
Prenat, Guillaume   +3 more
core   +1 more source

Bistable Isochoric Chiral Metamaterials with Reprogrammable Multiaxial Responses

open access: yesAdvanced Functional Materials, EarlyView.
An isochoric bistable rotational unit cell enables in situ modification of internal contact conditions post‐fabrication, without altering the global envelope dimensions of the surrounding architecture. By selectively switching between open and closed states, the tessellated chiral metamaterial can reprogram its volumetric response, including bulk ...
Shujia Chen   +3 more
wiley   +1 more source

Room temperature magnetization switching in topological insulator-ferromagnet heterostructures by spin-orbit torques

open access: yesNature Communications, 2017
The application of spin-orbit torque in topological insulator heterostructures is limited only under low temperature. Here, the authors report room temperature magnetization switching in topological insulator-ferromagnet heterostructures by spin-orbit ...
Yi Wang   +11 more
doaj   +1 more source

Switching of Perpendicular Magnetization via ac Spin-Orbit Torque

open access: yes, 2018
We theoretically and numerically investigate the switching of perpendicular magnetization by ac spin-orbit torque. We find that the threshold switching current for ac spin-orbit torque is much smaller than that for dc spin-orbit torque.
Lee, Kyung-Jin   +2 more
core   +1 more source

Efficient Magnetization Switching Driven by Orbital Torque in Light 3d Transition‐Metal Nitrides

open access: yesAdvanced Functional Materials, EarlyView.
Efficient magnetization switching is demonstrated through orbital torque generated from light 3d transition‐metal nitride. Transition‐metal nitrides are established as effective sources of orbital angular momentum for current‐induced switching, highlighting their potential for low‐power next‐generation orbitronic devices beyond conventional heavy‐metal‐
Gaurav K. Shukla   +3 more
wiley   +1 more source

Spin Hall effects in metallic antiferromagnets – perspectives for future spin-orbitronics

open access: yesAIP Advances, 2016
We investigate angular dependent spin-orbit torques from the spin Hall effect in a metallic antiferromagnet using the spin-torque ferromagnetic resonance technique.
Joseph Sklenar   +7 more
doaj   +1 more source

Giant, Linearly Increasing Spin–Orbit Torque Efficiency in Symmetry-Broken Spin–Orbit Torque Superlattices

open access: yes, 2023
Magnetic heterostructures with high spin–orbit torque efficiency and low impedance have great promise for low-power spintronic technologies. We report a symmetry-broken spin–orbit superlattice [Pt0.75Cu0.25/Co/Ta]n, in which the dampinglike spin–orbit ...
Xin Lin (149944)   +3 more
core   +1 more source

Modulation of Surface‐Associated Transport in (Bi1‐xSbx)2Te3 via Battery‐ Inspired Solid‐State Iontronic Gating

open access: yesAdvanced Functional Materials, EarlyView.
Iontronic gating in a battery‐inspired device modulates the relative weight of surface‐associated and bulk‐like transport fingerprints in (Bi1‐xSbx)2Te3, resulting in phenomenological valve‐like transport behavior. The strongest WAL‐associated coherent transport signatures emerge near the transport‐defined carrier compensation regime at ultra‐low gate ...
Gabriel Vinicius de Oliveira Silva   +5 more
wiley   +1 more source

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