Results 61 to 70 of about 841,478 (245)
Spin Hall effects in metallic antiferromagnets – perspectives for future spin-orbitronics
We investigate angular dependent spin-orbit torques from the spin Hall effect in a metallic antiferromagnet using the spin-torque ferromagnetic resonance technique.
Joseph Sklenar +7 more
doaj +1 more source
Spin Orbit Torque in Ferromagnetic Semiconductors [PDF]
Electrons not only have charges but also have spin. By utilizing the electron spin, the energy consumption of electronic devices can be reduced, their size can be scaled down and the efficiency of `read' and `write' in memory devices can be significantly
Li, Hang
core +1 more source
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam +6 more
wiley +1 more source
A spin torque meter with magnetic facet domains
Spin torques with different origins enable the magnetic domain wall motion, but the contributions are hard to be distinguished. Here, the authors show the method to measure both spin-magnetization transfer torque and spin–orbit torque by using mountain ...
Kyoung-Woong Moon +8 more
doaj +1 more source
Azobenzene photoswitches translate molecular‐scale E/Z photoisomerization into macroscopic material responses and device‐level photonic functions. This Review highlights how azobenzene research has evolved from molecular photochemistry to photoalignment, mass migration, photomechanics, and heat release, ultimately enabling holography, reconfigurable ...
Heeju Son +20 more
wiley +1 more source
Absence of orbital current torque in Ta/ferromagnet bilayers
It has become a heated debate as to whether the orbital Hall effect of a material could generate a non-local orbital current and a non-zero spin-orbit torque on an adjacent magnetic layer.
Qianbiao Liu, Lijun Zhu
doaj +1 more source
ABSTRACT The accelerating expansion of data‐centric technologies is sharply increasing the energy burden of information storage, placing unprecedented pressure on the efficiency of magnetic switching. Conventional field‐driven reversal, once the foundation of magnetic memory, has become impractical in modern architectures due to its high energy cost ...
Mohammad H. Badarneh +2 more
wiley +1 more source
Spin-orbit-torque engineering via oxygen manipulation
Spin transfer torques allow the electrical manipulation of magnetization at room temperature, which is desirable in spintronic devices such as spin transfer torque memories.
PARK, JAE HOON +9 more
core +2 more sources
Spin–orbit torque characterization in a nutshell
Spin current and spin torque generation through the spin–orbit interactions in solids, of bulk or interfacial origin, is at the heart of spintronics research.
Minh-Hai Nguyen, Chi-Feng Pai
doaj +1 more source
Anion‐exchange doping of conjugated polymers is an effective way to achieve high conductivities. Here, we report over 2000 S cm−1 electrical conductivity for doped P(g3BTTT). In addition, we show that P(g3BTTT) sustains exceptionally high doping levels without any drop in the charge mobility.
Basil Hunger +14 more
wiley +1 more source

