Results 251 to 260 of about 2,735,759 (291)

A survey of in-spin transfer torque MRAM computing

Science China Information Sciences, 2021
In traditional von Neumann computing architectures, the essential transfer of data between the processor and memory hierarchies limits the computational efficiency of next-generation system-on-a-chip. The emerging in-memory computing (IMC) approach addresses this issue and facilitates the movement of significant data and rapid computations.
Hao Cai 0001, Bo Liu 0019, Juntong Chen, Lirida A. B. Naviner, Yongliang Zhou, Zhen Wang 0019, Jun Yang 0006   +6 more
openaire   +1 more source

Spin-Transfer Torque and Dynamics

2006
The currents in magnetic multilayers are spin polarized and can carry enough angular momentum that they can cause magnetic reversal and induce stable precession of the magnetization in thin magnetic layers. The flow of spins is determined by the spin-dependent transport properties, like conductivity, interface resistance, and spin-flip scattering in ...
Mark D. Stiles, Jacques Miltat
openaire   +1 more source

Nanomagnonic devices based on the spin-transfer torque

Nature Nanotechnology, 2014
Magnonics is based on signal transmission and processing by spin waves (or their quanta, called magnons) propagating in a magnetic medium. In the same way as nanoplasmonics makes use of metallic nanostructures to confine and guide optical-frequency plasmon-polaritons, nanomagnonics uses nanoscale magnetic waveguides to control the propagation of spin ...
S, Urazhdin, V E, Demidov, H, Ulrichs, T, Kendziorczyk, T, Kuhn, J, Leuthold, G, Wilde, S O, Demokritov   +7 more
openaire   +2 more sources

Resonant Spin-Transfer Torque Magnetoresistive Memory

IEEE Transactions on Magnetics, 2018
Spin transfer torque magnetoresistive random access memory (STT-MRAM) has shown a great promise to be a main stream novel nonvolatile memory technology. Reduction of state switching current still remains to be a continued research focus for scaling down the size of the addressing transistors.
Jian-Gang Zhu, Abir Shadman
openaire   +1 more source

Low-current Spin Transfer Torque MRAM

2017 International Symposium on VLSI Design, Automation and Test (VLSI-DAT), 2017
To achieve low write current in high density Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) arrays, it is important to understand and co-optimize the different kinds of device switching currents, governed by different materials parameters.
Guohan Hu, J. J. Nowak, G. Lauer, J. H. Lee, J. Z. Sun, J. Harms, Anthony J. Annunziata, S. Brown, W. Chen, Y. H. Kim, N. Marchack, Sunil Murthy, Chandrasekharan Kothandaraman, Eugene J. O'Sullivan, J. H. Park, M. Reuter, R. P. Robertazzi, Philip Louis Trouilloud, Y. Zhu, Daniel Christopher Worledge   +19 more
openaire   +2 more sources

Recent Developments in Spin Transfer Torque MRAM

physica status solidi (RRL) – Rapid Research Letters, 2017
Spin transfer torque (STT) switching‐based magnetic random access memory (MRAM) is gaining significant industrial and academic attention due to its potential application as a non‐volatile memory device in computing devices, smartphones, and so on. STT‐MRAM devices with in‐plane magnetization configuration have been marketed as niche products.
Sbiaa, Rachid, Piramanayagam, S. N.
openaire   +2 more sources

Spin-transfer torque switching in magnetic tunnel junctions and spin-transfer torque random access memory

Journal of Physics: Condensed Matter, 2007
We present experimental and numerical results of current-driven magnetization switching in magnetic tunnel junctions. The experiments show that, for MgO-based magnetic tunnelling junctions, the tunnelling magnetoresistance ratio is as large as 155% and the intrinsic switching current density is as low as 1.1 ? 106?A?cm?2. The thermal effect and current
Zhitao Diao, Zhanjie Li, Shengyuang Wang, Yunfei Ding, Alex Panchula, Eugene Chen, Lien-Chang Wang, Yiming Huai   +7 more
openaire   +1 more source

Macroscopic description of spin transfer torque

Materials Science and Engineering: B, 2006
A macroscopic description of the current-induced torque due to spin transfer has been developed for layered systems consisting of ferromagnetic films, separated by nonmagnetic layers. The description is based on the classical spin diffusion equations for the distribution functions used in the theory of current-perpendicular-to-plane giant ...
J. Barnas, A. Fert, M. Gmitra, I. Weymann, V.K. Dugaev   +4 more
openaire   +1 more source

Spintronic Oscillators Based on Spin-Transfer Torque and Spin-Orbit Torque

2015
Spin-torque nano-oscillators (STNOs) are a possible new type of integrated device for applications such as microwave emission, frequency modulation, frequency mixing, and frequency detection. In order to reach telecommunication-application-required specifications, several issues must be tackled such as operating without a magnetic field and obtaining ...
Mario Carpentieri, Giovanni Finocchio
openaire   +2 more sources

Benchmarking of spin–orbit torque vs spin-transfer torque devices

Applied Physics Letters, 2022
Azad Naeemi, Piyush Kumar
exaly