Results 231 to 240 of about 412,933 (268)

Experimental Quantification of Spin-Phonon Coupling in Molecular Qubits Using Inelastic Neutron Scattering. [PDF]

J Am Chem Soc
Lohaus SH, Xia KT, Cheng Y, Hadt RG.
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Direct resist-free patterning of an organic semiconductor via thermal scanning probe lithography. [PDF]

Discov Nano
Luo K, Li J, Gu Y, Ma T, Zhang J, Cao L, Zhu Z, Tang H, Xu P, Jia H, Tu M, Li X.   +11 more
europepmc   +1 more source

Dilute magnetism and edge-state engineering in monolayer SnO. [PDF]

Nanoscale Adv
Fukuta Y, Adhikary S, Tsukagoshi K, Wakabayashi K.   +3 more
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Convergence-divergence circuits for multimodal integration of innate and learned opponent valences. [PDF]

Front Syst Neurosci
Wang W, Yang Y, Liu Q, Gao Y, Lv Q, Zhang K, Ning J, Sun Y.   +7 more
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Squeezing, trisqueezing and quadsqueezing in a hybrid oscillator-spin system. [PDF]

Nat Phys
Băzăvan O, Saner S, Webb DJ, Ainley EM, Drmota P, Nadlinger DP, Araneda G, Lucas DM, Ballance CJ, Srinivas R.   +9 more
europepmc   +1 more source

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Applications of Spin‐Spin Couplings

ChemInform, 2003
AbstractFor Abstract see ChemInform Abstract in Full Text.
Krystyna Kamienska‐Trela, Jacek Wojcik
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WHAT IS THE SPIN OF A SPIN WAVE?

Physics Letters A, 1981
Abstract We argue that the spin of a spin wave in the Heisenberg antiferromagnetic chain of spins 1 2 is equal to 1 2 rather than 1 as is generally considered to be true.
L.D. Faddeev, L.A. Takhtajan
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Spin-Spin Relaxation and Spin Temperatures

Physical Review, 1964
The equilibrium and nonequilibrium properties of an assembly of interacting spins are analyzed in the case of paramagnetism (nuclear). The evolution towards equilibrium is described by a generalized Pauli equation. This equation contains two relaxation times: a first one characterizing the evolution of the dipole-dipole system to equilibrium and a ...
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Spin Injection, Spin Transport and Spin Transfer

2004
The efficient injection of charge carriers having a strong net spin polarization of controllable orientation into nonmagnetic electronic materials, particularly semiconductor device structures, along with the subsequent manipulation and detection of this injected spin polarization, is essential to the successful performance of a wide range of potential
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