Results 121 to 130 of about 25,190 (289)

Universal Conductance Fluctuations in Quantum Anomalous Hall Insulators

Advanced Materials, EarlyView.
Universal conductance fluctuations are observed in mesoscopic quantum anomalous Hall insulators. Two distinct fluctuation patterns are identified, arising from different interference processes of bulk and chiral edge states, respectively. These findings unveil rich quantum interference phenomena in quantum anomalous Hall insulators and provide insights
Peng Deng, Peng Zhang, Gang Qiu, Ting‐Hsun Yang, Chang Niu, Yaochen Li, Wenqiang Cui, Yang Feng, Peide D. Ye, Ke He, Kai Chang, Kang L. Wang   +11 more
wiley   +1 more source

Spin force and intrinsic spin Hall effect in spintronics systems

, 2014
We investigate the spin Hall effect (SHE) in a wide class of spin-orbit coupling systems by using the spin force picture. We derive the general relation equation between spin force and spin current and show that the longitudinal force component can ...
Mansoor Jalil (20065992), Seng Tan (5594702), Cong Son Ho (20065989)   +2 more
core   +2 more sources

Huge self-spin swapping effect with asymmetric spin-sink structures

NPG Asia Materials
The spin swapping effect is a promising phenomenon that provides a symmetry-breaking component for deterministic field-free switching, essential for the all-electric control of spintronic devices.
Kitae Kim, Woo Young Shim, Sug-Bong Choe
doaj   +1 more source

Inhomogeneous Rashba spin-orbit coupling and intrinsic spin-Hall effect

, 2017
The spin-Hall effect is the generation of a transverse spin-current induced by a longitudinal electric field. Among the various scattering mechanisms which can induce a finite spin-Hall effect we focus on the intrinsic contribution arising from a Rashba ...
Seibold, G, Raimondi, R., SEIBOLD, GOTZ ULRICH, Caprara, S., GRILLI, Marco, Grilli, M., CAPRARA, SERGIO, RAIMONDI, Roberto   +7 more
core   +1 more source

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

Advanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam, William S. Rogers, Chen‐Yu Hu, Ming‐Yuan Song, Xinyu Bao, Shehrin Sayed, Jean Anne C. Incorvia   +6 more
wiley   +1 more source

Photonic spin hall shift control at the Doppler broadening dielectric medium

Ain Shams Engineering Journal
This paper theoretically investigates the coherent manipulation of the photonic spin hall shift in a four-level dielectric medium. The light beam interacts with cavity having four-level dielectric medium under the Doppler broadening effect.
Qaisar Khan, Ibrahim Al-Dayel, Meraj Ali Khan, Majid Khan   +3 more
doaj   +1 more source

Room‐Temperature Skyrmionic Synapse in 2D Ferromagnet Fe3GaTe2 Operating via Collective Spin Texture Transformation

Advanced Materials, EarlyView.
We demonstrate a neuromorphic synapse in 2D Fe3GaTe2 flakes. The device operates via a current‐driven transformation from a skyrmion‐lattice to a stripe‐domain state, yielding a linear anomalous Hall resistance response with a tunable slope to enable multiply‐accumulate operations. Simulations confirm its viability in artificial neural networks.
Jixiang Huang, Tongji Zhu, PeiYu Cai, Xiaoming Ma, Zhen Wang, Ruifu Zhang, Yi Hao, Jingdi Lu, Liubing He, Jun Xu, Yuejie Zhang, Wanjun Jiang, Jing Tao, Shiming Lei, Pavel Parchinskiy, Jing Teng, Lingfei Wang, Wei Niu, Elton J.G. Santos, Xiaoqian Zhang, Peng Li   +20 more
wiley   +1 more source

Thermal‐Driven Diode Polarity Switching From Competing Helical Superconducting States in WTe2/α‐Fe2O3 Heterostructures

Advanced Materials, EarlyView.
A Nb‐proximitized Josephson junction based on a WTe2/α‐Fe2O3 heterostructure exhibits a robust superconducting diode effect with programmable polarity. The diode direction can be trained by magnetic fields and switched by temperature cycling, revealing tunable finite‐momentum pairing states and competing superconducting states in symmetry‐broken ...
Enze Zhang, Grant Z. X. Yang, Zi‐Ting Sun, Xinhou Chen, Shishun Zhao, Chufan Chen, Chenhui Zhang, Fanrui Hu, K. T. Law, Hyunsoo Yang   +9 more
wiley   +1 more source

Hall Voltage with the Spin Hall Effect

, 2007
The spin Hall effect does not generally result in a charge Hall voltage. We predict that in systems with inhomogeneous electron density in the direction perpendicular to main current flow, the spin Hall effect is instead accompanied by a Hall voltage.
Pershin, Yu. V., Di Ventra, M.
openaire   +2 more sources

Spin Hall Effects in Metallic Antiferromagnets

Physical Review Letters, 2014
We investigate four CuAu-I-type metallic antiferromagnets for their potential as spin current detectors using spin pumping and inverse spin Hall effect. Nontrivial spin Hall effects were observed for FeMn, PdMn, and IrMn while a much higher effect was obtained for PtMn. Using thickness-dependent measurements, we determined the spin diffusion lengths of
Zhang, Wei, Jungfleisch, Matthias B., Jiang, Wanjun, Pearson, John E., Hoffmann, Axel, Freimuth, Frank, Mokrousov, Yuriy   +6 more
openaire   +4 more sources