Results 221 to 230 of about 25,190 (289)
Advanced Electronic Materials, EarlyView.Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
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Advanced Electronic Materials, EarlyView.ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash +4 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.An experimentally validated optoelectronic device model is presented to describe the efficiency and roll‐off behavior of single‐layer TADF OLEDs. By coupling charge transport, exciton dynamics, and optical outcoupling, the model reproduces the External Quantum Efficiency (EQE) across different emission layer thicknesses and temperatures, offering ...
Jawid Nikan +4 more
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Uranium Doped Gallium Nitride Epitaxial Thin Films
Advanced Electronic Materials, EarlyView.Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix +10 more
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Experimental observation of spin Hall effect of light using compact weak measurements. [PDF]
NanophotonicsChoi J +7 more
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Nonlinear Transverse Transport in a Ferromagnetic Polar Metal
Advanced Electronic Materials, EarlyView.This work reports the observation of a nonlinear transverse response in ferromagnetic polar SrRuO3(111) thin films. The nonlinear signal exhibits a sharp enhancement across the magnetic phase transition. Through detailed scaling and theoretical analysis, the authors attribute this behavior to a sign reversal of the Berry curvature triple, establishing ...
Xuyang Sha +13 more
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Spin-Hall-effect-modulation skyrmion oscillator. [PDF]
Sci Rep, 2020 Whang HS, Choe SB.
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Advanced Electronic Materials, EarlyView.Ultrathin Al‐substituted YIG films with perpendicular magnetic anisotropy are sputter‐grown directly on Si/SiOx using an ultrathin AlOx buffer layer. Al diffusion reduces the saturation magnetization and stabilizes PMA via magnetoelastic effects. Pt/Al:YIG bilayers exhibit strong spin Hall magnetoresistance and efficient spin–orbit torque switching ...
Matteo Fettizio +4 more
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Topological Materials and Related Applications
Advanced Electronic Materials, EarlyView.This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti +9 more
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Large Anomalous Nernst Effect in Disordered CoPt Thin Films for Planar Thermoelectric Sensing
Advanced Electronic Materials, EarlyView.Disordered CoPt thin films exhibit a large anomalous Nernst effect with strong dependence on Pt concentration. The transverse thermoelectric response reaches 3.22 µV K−1 near equiatomic composition and an ANE sensitivity of 0.3 µm A−1. The results reveal that composition‐controlled microstructure in sputtered CoPt alloys provides an effective route for
Mojtaba Mohammadi +2 more
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