Results 61 to 70 of about 327,186 (287)

Fermi Surface Nesting and Anomalous Hall Effect in Magnetically Frustrated Mn2PdIn

open access: yesAdvanced Functional Materials, EarlyView.
Mn2PdIn, a frustrated inverse Heusler alloy, showing electronic‐structure driven anomalous Hall effect with Weyl crossings, Fermi‐surface nesting and near‐zero magnetization ideal for low‐magnetization spintronics. Abstract Noncollinear magnets with near‐zero net magnetization and nontrivial bulk electronic topology hold significant promise for ...
Afsar Ahmed   +7 more
wiley   +1 more source

Current-driven domain wall motion with spin Hall effect: Reduction of threshold current density

open access: yes, 2013
We theoretically study the current-driven domain wall motion in the presence of both the spin Hall effect and an extrinsic pinning potential. The spin Hall effect mainly affects the damping ratio of the domain wall precession in the pinning potential ...
Lee, Hyun-Woo, Lee, Kyung-Jin, Ryu, Jisu
core   +1 more source

MOFs and COFs in Electronics: Bridging the Gap between Intrinsic Properties and Measured Performance

open access: yesAdvanced Functional Materials, EarlyView.
Metal‐organic frameworks (MOFs) and covalent organic frameworks (COFs) hold promise for advanced electronics. However, discrepancies in reported electrical conductivities highlight the importance of measurement methodologies. This review explores intrinsic charge transport mechanisms and extrinsic factors influencing performance, and critically ...
Jonas F. Pöhls, R. Thomas Weitz
wiley   +1 more source

Magnetization-dependent spin Hall effect in a perpendicular magnetized film

open access: yesPhysical Review Research, 2020
In the spin Hall effect (SHE), the vector cross-product relations among charge current, spin current, and spin polarization are strictly followed, so that only the in-plane spin accumulation can be induced at the film surface.
T. C. Chuang   +3 more
doaj   +1 more source

Quantifying spin Hall angles from spin pumping: Experiments and Theory

open access: yes, 2010
Spin Hall effects intermix spin and charge currents even in nonmagnetic materials and, therefore, ultimately may allow the use of spin transport without the need for ferromagnets.
A. Hoffmann   +7 more
core   +1 more source

Two‐Dimensional Materials as a Multiproperty Sensing Platform

open access: yesAdvanced Functional Materials, EarlyView.
Various sensing modalities enabled and/or enhanced by two‐dimensional (2D) materials are reviewed. The domains considered for sensing include: 1) optoelectronics, 2) quantum defects, 3) scanning probe microscopy, 4) nanomechanics, and 5) bio‐ and chemosensing.
Dipankar Jana   +11 more
wiley   +1 more source

Matching domain wall configuration and spin-orbit torques for very efficient domain-wall motion

open access: yes, 2012
In our numerical study, we identify the best conditions for efficient domain wall motion by spin-orbit torques originating from the Spin Hall effect or Rashba effect. We demonstrate that the effect depends critically on the domain wall configuration, the
Anane, A.   +8 more
core   +1 more source

Emergent Magnetic Structures at the 2D Limit of the Altermagnet MnTe

open access: yesAdvanced Functional Materials, EarlyView.
Renewed interest in MnTe has emerged due to its intriguing altermagnetism, a newly identified form of magnetism distinct from conventional ferro‐, antiferro‐, or paramagnetism. By combining magnetic X‐ray absorption spectroscopy, scanning tunnelling microscopy, and first‐principles theory, this study reveals that thinning MnTe to the 2D limit ...
Marc G. Cuxart   +10 more
wiley   +1 more source

Anomalous Hall magnetoresistance in a ferromagnet

open access: yes, 2018
The anomalous Hall effect, observed in conducting ferromagnets with broken time-reversal symmetry, offers the possibility to couple spin and orbital degrees of freedom of electrons in ferromagnets.
Li, Run-Wei   +7 more
core   +1 more source

Magnetic and Structural Response Tuned by Coexisting Mn Concentration‐Dependent Phases in MnBi2Te4 Thin Film Grown on GaAs(001) by Molecular Beam Epitaxy

open access: yesAdvanced Functional Materials, EarlyView.
The study explores structural and magnetic properties of one of the most recent topological quantum materials (MnBi2Te4). The Mn‐poor structure leads to stacking faults (quintuple layer ‐ QL of Bi2Te3 formation instead of a septuple layer ‐ SL of MnBi2Te4), resulting in a coexistence between weak antiferromagnetism and ferromagnetism.
Wesley F. Inoch   +10 more
wiley   +1 more source

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