Results 271 to 280 of about 120,424 (325)

Spin-Transfer Torque

, 2021
In this chapter, we have introduced the concept and definition of Spin Transfer Torque. Furthermore, we have discussed the Spin Transfer Torque effect in layer structures, both for Single and Double ferromagnetic layers. We have also addressed interesting topics like Spin-Transfer-Torque-driven Magnetization Dynamics, both in the absence and presence ...
P. Dey, J. N. Roy
semanticscholar   +2 more sources

Spin-Transfer-Torque MRAM: the Next Revolution in Memory

International Memory Workshop, 2022
This paper introduces the operation and features of Spin-Transfer-Torque Magnetoresistive Random Access Memory (STT-MRAM), and provides a brief history of the field. Then the four main applications of STT-MRAM are described.
D. Worledge
semanticscholar   +1 more source

Field-free and sub-ns magnetization switching of magnetic tunnel junctions by combining spin-transfer torque and spin–orbit torque

, 2021
We investigate the magnetization switching via a combination of spin-transfer torque (STT) and spin–orbit torque (SOT). STT and SOT are simultaneously induced by a pulsed current flowing through an in-plane easy-axis magnetic tunnel junction and an ...
Chaoliang Zhang, Y. Takeuchi, S. Fukami, H. Ohno   +3 more
semanticscholar   +1 more source

Resonant Spin-Transfer Torque Magnetoresistive Memory

IEEE Transactions on Magnetics, 2018
Spin transfer torque magnetoresistive random access memory (STT-MRAM) has shown a great promise to be a main stream novel nonvolatile memory technology. Reduction of state switching current still remains to be a continued research focus for scaling down the size of the addressing transistors.
Jian-Gang Zhu, Abir Shadman
openaire   +1 more source

Demonstration of a Reliable 1 Gb Standalone Spin-Transfer Torque MRAM For Industrial Applications

International Electron Devices Meeting, 2019
In this paper, we describe a fully-functional 1 Gb standalone spin-transfer torque magnetoresistive random access memory (STT-MRAM) integrated on 28 nm CMOS and based on perpendicular magnetic tunnel junctions (pMTJ’s).
S. Aggarwal, K. Nagel, G. Shimon, J. Sun, T. Andre, S. Alam, H. Almasi, M. Deherrera, B. Hughes, S. Ikegawa, J. Janesky, H. K. Lee, H. Lu, F. Mancoff   +13 more
semanticscholar   +1 more source

Spin-Transfer Torque Switching in Magnetic Multilayers

IEEE Transactions on Magnetics, 2006
In this paper, we point out how the magnetization switching depends on the nanostructure geometry and on the material parameters. The micromagnetic study is carried out on multilayer nanodevices constituted by Permalloy(Py)/Cu/Py and Co/Cu/Co with different cross-sections.
M. CARPENTIERI, CONSOLO, Giancarlo, AZZERBONI, Bruno, L. TORRES, E. CARDELLI   +4 more
openaire   +5 more sources

Spin-transfer torque MRAM with reliable 2 ns writing for last level cache applications

International Electron Devices Meeting, 2019
We report for the first time reliable 2 ns switching of spin-transfer torque magneto-resistive random access memory (STT-MRAM) devices by demonstrating 100% write-error-rate (WER) yield at 1e-6 write-error floor of 254 devices with tight distributions ...
G. Hu, D. Kim, Jun Seok Kim, C. Kothandaraman, G. Lauer, Hun-kyu Lee, P. MarchackNathan, M. Reuter, R. Robertazzi, Jonathan Z Sun, T. Suwannasiri, Janusz J. Nowak, P. Trouilloud, S. Woo, D. Worledge, M. Gottwald, S. Brown, B. Doris, C. D'Emic, P. Hashemi, Houssameddine Dimitri, Qing He   +21 more
semanticscholar   +1 more source

Spintronic Processing Unit in Spin Transfer Torque Magnetic Random Access Memory

IEEE Transactions on Electron Devices, 2019
Recently, exploiting emerging nonvolatile memories to implement the process-in-memory (PIM) paradigm have shown great potential to address the von Neumann bottleneck and have attracted extensive research and development. In this paper, we present a novel
He Zhang, W. Kang, K. Cao, Bi Wu, Youguang Zhang, Weisheng Zhao   +5 more
semanticscholar   +1 more source

Spin-transfer versus spin-orbit torque MRAM

2016 IEEE International Nanoelectronics Conference (INEC), 2016
Spin transfer torque-MRAM is a viable non-volatile memory solution for replacing conventional memories and can cover a broad range of embedded memory applications. Recently discovered spin orbit torque combined with spin transfer torque could be engineered for efficient switching.
Kulothungasagaran Narayanapillai, Xuepeng Qiu, Yi Wang, Jaehyun Kwon, Jiawei Yu, Li Ming Loong, William Legrand, Jungbum Yoon, Karan Banerjee, Hyunsoo Yang   +9 more
openaire   +1 more source

SPICE-Only Model for Spin-Transfer Torque Domain Wall MTJ Logic

IEEE Transactions on Electron Devices, 2019
The spin-transfer torque domain wall (DW) magnetic tunnel junction (MTJ) enables spintronic logic circuits that can be directly cascaded without deleterious signal conversion circuitry and is one of the only spintronic devices for which cascading has ...
Xuan Hu, Andrew Timm, Wesley H. Brigner, J. Incorvia, J. Friedman   +4 more
semanticscholar   +1 more source