Results 251 to 260 of about 2,735,759 (288)

Spin-Transfer Torque Switching in Magnetic Multilayers

IEEE Transactions on Magnetics, 2006
In this paper, we point out how the magnetization switching depends on the nanostructure geometry and on the material parameters. The micromagnetic study is carried out on multilayer nanodevices constituted by Permalloy(Py)/Cu/Py and Co/Cu/Co with different cross-sections.
M. CARPENTIERI, CONSOLO, Giancarlo, AZZERBONI, Bruno, L. TORRES, E. CARDELLI   +4 more
openaire   +5 more sources

A survey of in-spin transfer torque MRAM computing

Science China Information Sciences, 2021
In traditional von Neumann computing architectures, the essential transfer of data between the processor and memory hierarchies limits the computational efficiency of next-generation system-on-a-chip. The emerging in-memory computing (IMC) approach addresses this issue and facilitates the movement of significant data and rapid computations.
Hao Cai 0001, Bo Liu 0019, Juntong Chen, Lirida A. B. Naviner, Yongliang Zhou, Zhen Wang 0019, Jun Yang 0006   +6 more
openaire   +1 more source

Spin-Transfer Torque and Dynamics

2006
The currents in magnetic multilayers are spin polarized and can carry enough angular momentum that they can cause magnetic reversal and induce stable precession of the magnetization in thin magnetic layers. The flow of spins is determined by the spin-dependent transport properties, like conductivity, interface resistance, and spin-flip scattering in ...
Mark D. Stiles, Jacques Miltat
openaire   +1 more source

Nanomagnonic devices based on the spin-transfer torque

Nature Nanotechnology, 2014
Magnonics is based on signal transmission and processing by spin waves (or their quanta, called magnons) propagating in a magnetic medium. In the same way as nanoplasmonics makes use of metallic nanostructures to confine and guide optical-frequency plasmon-polaritons, nanomagnonics uses nanoscale magnetic waveguides to control the propagation of spin ...
S, Urazhdin, V E, Demidov, H, Ulrichs, T, Kendziorczyk, T, Kuhn, J, Leuthold, G, Wilde, S O, Demokritov   +7 more
openaire   +2 more sources

Resonant Spin-Transfer Torque Magnetoresistive Memory

IEEE Transactions on Magnetics, 2018
Spin transfer torque magnetoresistive random access memory (STT-MRAM) has shown a great promise to be a main stream novel nonvolatile memory technology. Reduction of state switching current still remains to be a continued research focus for scaling down the size of the addressing transistors.
Jian-Gang Zhu, Abir Shadman
openaire   +1 more source

Low-current Spin Transfer Torque MRAM

2017 International Symposium on VLSI Design, Automation and Test (VLSI-DAT), 2017
To achieve low write current in high density Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) arrays, it is important to understand and co-optimize the different kinds of device switching currents, governed by different materials parameters.
Guohan Hu, J. J. Nowak, G. Lauer, J. H. Lee, J. Z. Sun, J. Harms, Anthony J. Annunziata, S. Brown, W. Chen, Y. H. Kim, N. Marchack, Sunil Murthy, Chandrasekharan Kothandaraman, Eugene J. O'Sullivan, J. H. Park, M. Reuter, R. P. Robertazzi, Philip Louis Trouilloud, Y. Zhu, Daniel Christopher Worledge   +19 more
openaire   +2 more sources

Recent Developments in Spin Transfer Torque MRAM

physica status solidi (RRL) – Rapid Research Letters, 2017
Spin transfer torque (STT) switching‐based magnetic random access memory (MRAM) is gaining significant industrial and academic attention due to its potential application as a non‐volatile memory device in computing devices, smartphones, and so on. STT‐MRAM devices with in‐plane magnetization configuration have been marketed as niche products.
Sbiaa, Rachid, Piramanayagam, S. N.
openaire   +2 more sources

Effects of screened Coulomb interaction on spin transfer torque

Physical Review B, 2021
Muhammad Aziz Majidi, Adam B Cahaya
exaly  

Field-free and sub-ns magnetization switching of magnetic tunnel junctions by combining spin-transfer torque and spin–orbit torque

Applied Physics Letters, 2021
Shunsuke Fukami, Hideo Ohno, Chaoliang Zhang   +2 more
exaly  

Spin transfer torque in Mn3Ga -based ferrimagnetic tunnel junctions from first principles

Physical Review B, 2021
Qilong Sun, Maria Stamenova, Farzad Mahfouzi   +2 more
exaly